Large area flexible devices based on group-III nitrides

Abstract

Summary form only given. We have fabricated various nitride based devices with the use of newly developed low temperature epitaxial growth technique called PSD and confirmed its applicability for fabrication of nitride devices on large area low cost substrates such as metal foils, mica sheets, and glass. With the use of conventional single crystal wafers, we, firstly, confirmed successful fabrication and operation of various devices such as LEDs, HEMTs, MISFETs, and solar cells. We have found that the low growth temperature is quite advantageous for preparation of high In concentration InGaN films for long wave length LEDs and solar cells. The low growth temperature also allows us to fabricate nitride devices such as RGB LEDs on low cost large area substrates without causing serious interfacial reactions between nitride films and chemically vulnerable substrates.