K. Takeda, Erina Kanno, T. Fujii, K. Hasebe, Tsuyoshi Yamamoto, T. Kakitsuka, S. Matsuo
{"title":"Si衬底上超短腔分布bragg反射激光器的连续波工作","authors":"K. Takeda, Erina Kanno, T. Fujii, K. Hasebe, Tsuyoshi Yamamoto, T. Kakitsuka, S. Matsuo","doi":"10.1109/ICIPRM.2016.7528750","DOIUrl":null,"url":null,"abstract":"We have fabricated ultra-short cavity membrane distributed Bragg reflector lasers on SiO2/Si substrate for constructing chip-to-chip optical links. To reduce the power consumption of transmitters, reducing cavity length is important. Since the membrane structure enables us to achieve a large optical confinement factor and a surface grating with a large coupling coefficient, we have successfully reduced cavity length to 10 μm. The device exhibits a threshold current of 0.17 mA with a side-mode suppression ratio of 39.1 dB. We have also demonstrated direct modulation using 25.8-Gbit/s NRZ signal and achieved eye opening with a bias current of 1.8 mA.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates\",\"authors\":\"K. Takeda, Erina Kanno, T. Fujii, K. Hasebe, Tsuyoshi Yamamoto, T. Kakitsuka, S. Matsuo\",\"doi\":\"10.1109/ICIPRM.2016.7528750\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have fabricated ultra-short cavity membrane distributed Bragg reflector lasers on SiO2/Si substrate for constructing chip-to-chip optical links. To reduce the power consumption of transmitters, reducing cavity length is important. Since the membrane structure enables us to achieve a large optical confinement factor and a surface grating with a large coupling coefficient, we have successfully reduced cavity length to 10 μm. The device exhibits a threshold current of 0.17 mA with a side-mode suppression ratio of 39.1 dB. We have also demonstrated direct modulation using 25.8-Gbit/s NRZ signal and achieved eye opening with a bias current of 1.8 mA.\",\"PeriodicalId\":357009,\"journal\":{\"name\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2016.7528750\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2016.7528750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates
We have fabricated ultra-short cavity membrane distributed Bragg reflector lasers on SiO2/Si substrate for constructing chip-to-chip optical links. To reduce the power consumption of transmitters, reducing cavity length is important. Since the membrane structure enables us to achieve a large optical confinement factor and a surface grating with a large coupling coefficient, we have successfully reduced cavity length to 10 μm. The device exhibits a threshold current of 0.17 mA with a side-mode suppression ratio of 39.1 dB. We have also demonstrated direct modulation using 25.8-Gbit/s NRZ signal and achieved eye opening with a bias current of 1.8 mA.