Si衬底上超短腔分布bragg反射激光器的连续波工作

K. Takeda, Erina Kanno, T. Fujii, K. Hasebe, Tsuyoshi Yamamoto, T. Kakitsuka, S. Matsuo
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引用次数: 2

摘要

我们在SiO2/Si衬底上制备了超短腔膜分布Bragg反射激光器,用于构建芯片到芯片的光链路。为了降低发射机的功耗,减小空腔长度是很重要的。由于膜结构使我们能够实现大的光约束因子和具有大耦合系数的表面光栅,我们成功地将腔长减小到10 μm。该器件的阈值电流为0.17 mA,侧模抑制比为39.1 dB。我们还演示了使用25.8 gbit /s NRZ信号的直接调制,并以1.8 mA的偏置电流实现了大开眼界。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates
We have fabricated ultra-short cavity membrane distributed Bragg reflector lasers on SiO2/Si substrate for constructing chip-to-chip optical links. To reduce the power consumption of transmitters, reducing cavity length is important. Since the membrane structure enables us to achieve a large optical confinement factor and a surface grating with a large coupling coefficient, we have successfully reduced cavity length to 10 μm. The device exhibits a threshold current of 0.17 mA with a side-mode suppression ratio of 39.1 dB. We have also demonstrated direct modulation using 25.8-Gbit/s NRZ signal and achieved eye opening with a bias current of 1.8 mA.
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