具有再生源极/漏极的16nm InGaAs沟道多栅极mosfet的工作

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI:10.1109/ICIPRM.2016.7528830

H. Kinoshita, N. Kise, A. Yukimachi, T. Kanazawa, Y. Miyamoto

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引用次数: 4

摘要

我们成功地开发了利用MOVPE再生源极和漏极的16nm InGaAs沟道多栅极mosfet的制造工艺。该器件的Id值为707 μA/μm。和498 μS/μm。通断比为103 @ Vd = 0.5V。

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Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain

We successfully developed fabrication process of 16nm InGaAs channel multi gate MOSFETs with regrown source and drain by using MOVPE. This device showed 707 μA/μm of I_d.max and 498 μS/μm of g_m.max. On-off ratio was 10³ @ V_d = 0.5V.

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来源期刊

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

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