Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)最新文献

{"title":"Evaluation Of Lithographic Performance Of X-Ray Stepper XS-1","authors":"T. Taguchi, S. Mitsui, Y. Tanaka, K. Fujii, S. Sugihara, K. Yamaguchi, Y. Kikuchi, S. Tsuboi, H. Aoyama, N. Nakayama, K. Marumoto, M. Yamabe, K. Suzuki, Y. Gomei, T. Hisatsugu, M. Fukuda, M. Suzuki, T. Haga, S. Itabashi, H. Morita","doi":"10.1109/IMNC.1998.729924","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729924","url":null,"abstract":"T. Taguchi, S. Mitsui, Y. Tanaka, K. Fujii, S. Sugihara, K. Yamaguchi, Y. Kikuchi, S. Tsuboi, H. Aoyama, N. Nakayama, K. Marumoto, M. Yamabe, K. Suzdci, Y. Gomei and T. Hisatsugu Association of Super-Advanced Electronics Technologies (ASET) c/o NTT System Electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi 243-01 98, Japan M. Fukuda, M. Suzuki, T. Haga, S . Itabashi and H. Morita NTT System Electronics Laboratories, 31 Morinosato Wakamiya, Atsugi 243-01 98, Japan","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134016464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation Of Electron Trajectory In The Cell-Projection Lithography Optical System","authors":"K. Yamaguchi, M. Kotera","doi":"10.1109/IMNC.1998.730010","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730010","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"149 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134162029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improvement Of Overlay Accuracy In SR Lithography For Gigabit-Scale Dram Fabrication","authors":"M. Suita, T. Hifumi, H. Sumitani, K. Itoga, H. Ootera, K. Marumoto, W. Wakamiya, T. Matsumoto, T. Yamamoto, R. Edo, S. Ohishi, K. Sentoku","doi":"10.1109/IMNC.1998.730006","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730006","url":null,"abstract":"Muneyoshi Suita, Takashi Hifumi, Hiroaki Sumitani, Kenji Itoga, Hiroki Ootera and Kenji Marumoto Advanced Technology R&D Center, Mitsubishi Electric Corp., 8-1 -1, Tsukaguchi-Honmachi, Amagasaki, Hyogo 661 -8661, Japan Wataru Wakamiya ULSl Laboratory, Mitsubishi Electric Corp., 4-1, Mizuhara, Itami, Hyogo 664, Japan Matsumoto, Takeshi Yamamoto, Ryo Edo, Satoru Ohishi and Koichi Sentoku Nanotechnology Research Center, Canon Inc., 20-2, Kiyohara Kogyo-Danchi, Utsunomiya, Tochigi, 321 -32, Japan","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127817726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel Fabrication Of Comb Drive Actuator Using RIE Of Polysilicon And [110] Si Anisotropic Bulk Etching In KOH","authors":"Hyung-Taek Lim, Yong-Kweon Kim","doi":"10.1117/12.324297","DOIUrl":"https://doi.org/10.1117/12.324297","url":null,"abstract":"A bulk-micromachined interdigitated comb actuator supported by surface-micromachined polysilicon springs is proposed and fabricated for excitation of resonating momentum. The excitation force electrically generated by the interdigitated comb pair with a 420 height of (110) wafer is more effective than that obtained using a comb pair with a few height fabricated by a surface micromachining technique. The geometry of the interdigitated comb finger pair is 420 high, 20 wide, 5 apart from the neighboring interdigitated comb finger, respectively. A (110) oriented 420-thick Si wafer is used to fabricate the interdigitated comb electrode array using the technique of anisotropic bulk etching in KOH aqueous solution. A 5-thick phosphorous-doped LPCVD polysilicon film is used for fabrication of the flexures of the comb actuator using the technique of reactive ion etching. Repetition of the LPCVD Si3N4 film deposition and reactive ion etching process builds a Si3N4 structure, which envelopes and protects the released polysilicon structure from KOH aqueous etchant without an additional mask for passivation patterning. Using a double-sided aligned fabrication technique realizes not only polysilicon flexures formation on both sides of the actuator but also removal of two slant (111) planes in concave corners of the interdigitated comb finger array, which appear during (110) Si orientation-dependent etching and limit the interdigitated comb actuator design.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114883479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Micromachined Optical Components Integrated With Photodiode","authors":"M. Sasaki, Y. Arai, H. Takebe, K. Hane","doi":"10.1109/IMNC.1998.730039","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730039","url":null,"abstract":"Si micromachining gives new optical component intrgiated with the semiconductor drvit c. The optical component including the photodetector is i d d enabling the beam iritensity rrioriitor without additional elements. For the function of some optical components (e.g.. grating, pinhole), t he mechanical struct lire is impoi tant. Si m i c lomachining technology c dn offm t he accurate mechanical structure. In this study. we have fabricated the I iarisparent posit ion sensot. and the pinhole integrated with the photodiode","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123546279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization Of The Nitrided GaAs Thin Layers After Rapid Thermal Annealing By Using Raman Scattering","authors":"E. Koh, Young Ju Park, E. Kim, S. Choh","doi":"10.1109/IMNC.1998.730048","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730048","url":null,"abstract":"By using Raman spectroscopy, we examine defects generated from the nitridation of a GaAs surface performed by a nitrogen electron cyclotron resonance (ECR) plasma at various temperatures and its changed properties after the isochronal (15sec) rapid thermal annealing (RTA) at 750°C, 850°C and 950°C. The unpolarized Raman spectra taken from the nitrided samples show that the bandwidths and the peak frequencies for LO phonon band were broader and downshifted due to result from the increased nitridation temperature, respectively, but the spectra obtained after RTA are inclined to recover to the bandwidth and the peak frequencies of the un-nitrided sample. And the height ratio of TO/LO is also decreased. We estimate the correlation length for each sample from the relationship between the Raman shift of LO phonon and the broadening as a function of correlation length, and show that the point defects can be annealed out by annealing processes. I . INTRODUCTION Nitridation technique has been used for the formation of a thin nitrided buffer layer on which high quality nitrided films can be formed, particularly, for the growth of a GaN layer. The Raman studies in relation to semiconductors have mainly concentrated on the bulk materials, the epitaxial layers, and the surface damaged by ion implantation which generates large strains. However, studies on thin nitrided layers have rarely been reported because the surface modification of the nitridation causes much smaller strains compared to that of the ion implantation. In this work, we investigate defects generated from the nitridation process and especially its changed properties after RTA by using Raman scattering. 11 . EXPERIMENTAL The samples used in this work were n-type (001) GaAs. Nitridation was performed at various temperatures by ECR plasma power of 1OOW. Each nitrided sample was applied isochronal (1 Ssec) rapid thermal annealing (RTA) at 750 \"C, 850°C and 950 \"C. Raman spectra were measured from an oblique forward scattering geometry (0~160\") in order to obtain more information from the near surface region. III. RESULTS AND DISCUSSION Only the LO phonon band for GaAs is allowed by the Raman selection rule, but the LO and the TO phonons are allowed for the un-nitrided sample as shown in Fig. 1. Thus the un-nitrided sample consists with somewhat random crystallographic orientation and its measured Raman spectrum is regarded as a reference to the other samples. Figure 1 shows the unpolarized Raman spectra taken from the un-nitrided GaAs, the nitrided GaAs at 550°C, and GaAs nitrided at 550°C after RTA at 95OoC, respectively. For the LO phonon band of the nitrided samples, the bandwidths are broader and the peak frequency is downshifted as un-nitrided sample, but in the case of the annealed samples the bandwidth and the peak frequency are narrower and upshifted as the nitrided samples, respectively. And the height ratio of TO/LO is decreased, especially at the sample after RTA. Fig. 2 summarizes the ","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"497 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129399218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Study On The High Temperture Platinum Etching","authors":"Hyoun-woo Kim, B. Ju, B. Nam, W. Yoo, C. Kang, J. Moon, Moonyong Lee","doi":"10.1109/IMNC.1998.730053","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730053","url":null,"abstract":"1. Introductlon It is necessary to use the platinum as a bottom electrode material of the BST capacitor in highly integratad deveces, however, the Pt etching of the fine patterns is difficult due to the inherent non-reactivity of platinum. It Is revealed that the Pt etch slope of 80' was attained by OJ CI, chemistry b y elevating the substrate temperature up to 160°C. This resutlt is thought to be due to the reactlon of 0 species with TI layer and analyzed by TEM, XPS and AES.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129860255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-Organization Of A Two-Dimensional Array Of Gold Nano-Dots Encapsulated By Alkanethiol","authors":"S. Huang, H. Sakaue, S. Shingubara, T. Takahagi","doi":"10.1143/JJAP.37.7198","DOIUrl":"https://doi.org/10.1143/JJAP.37.7198","url":null,"abstract":"We have studied a fabrication strategy for self-organization of a two-dimensional array of alkanethiol-encapsulated gold nanodots. The fabrication process has two steps: (1) preparation of alkanethiol-encapsulated gold particles from gold colloidal particles; (2) self-organization of an ordered close-packed array of gold nanodots encapsulated by alkanethiol on a substrate. By this method, we succeeded in fabricating a wide range of ordered close-packed monolayers of gold nanodots. The simplicity, flexibility, and practicality of this method makes it a prospective procedure for developing future nanoelectronic devices.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"SE-13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126578752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Measurement Of Secondary Electron Emission Coefficient From MgO Protecting Layer","authors":"E. Choi, H. Oh, Y. Kim, J. Ko, T. Cho, D.I. Kim, G. Cho, S. Kang","doi":"10.1109/IMNC.1998.730086","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730086","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122193190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A New Thermal Characterization Technique For Thermal Actuators Using A Frequency Response Analyzer","authors":"Jae-Youl Lee, Sang-Won Kang","doi":"10.1109/IMNC.1998.730035","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730035","url":null,"abstract":"1. Abstract : We have, fabricated microrelays with a thermally driven polycrystalline silicon microbridge actuator and characterized their thermal parameters. An electrical equivalent circuit for microactuator has been modeled in functions of experimental parameters to describe the thermal characteristics. Then thermal conductance and thermal capacitance of microactuator have been derived at once from the model and frequency response analysis results. A radiation source is not needed in this method because signal voltage applied by frequency response analyzer heats microactuator. The method also enables a elimination of error from ambient temperature variation due to independence on ambient temperature. 2. Introduction : Extraction and modeling of thermal parameters is useful to design the speed and power consumption of thermal actuators and thermal sensors. According to reported works [1][2], the measurement of thermal conductance is achieved by dc method and thermal capacitance is measured by ac method using the radiation source. Therefore these are necessary to use both dc method and ac method. Also ac method needs the radiation source. In this work, we have proposed a new thermal characterization technique for thermal actuators using a frequency response analyzer. 3. Results and Discussion : The structure of microrelay is shown in Fig. 1. Microbridges have lengths of 300, 500 and 7 0 0 ~ and widths of 40 and 60m and thickness of 3m. For heavily doped polycrystalline silicon, the temperature characteristics of resistivity obey the linear relationship [3]. Therefore the resistance of polycrystalline silicon microbridge actuator can be assume the equation as Where R, is the resistance of actuator at temperature To, a is the temperature coefficient of resistance, r is the average temperature of actuator, To is the ambient temperature. Fig. 2 shows the simple lumped model for a thermal equivalent circuit of thermal microactuator. The average temperature variation of microactuator can be calculated from the relationship between Jole’s heating generated by signal voltage and the thermal impedance of the thermal equivalent circuit. Since the electrical impedance of microactuator is a function of average temperature variation, the thermal conductance (G,) and thermal capacitance (C,) can be expressed as R ( T ) = R,, {1+ a(T T u ) } (eq. 1)","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126615812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}