A Study On The High Temperture Platinum Etching

Hyoun-woo Kim, B. Ju, B. Nam, W. Yoo, C. Kang, J. Moon, Moonyong Lee
{"title":"A Study On The High Temperture Platinum Etching","authors":"Hyoun-woo Kim, B. Ju, B. Nam, W. Yoo, C. Kang, J. Moon, Moonyong Lee","doi":"10.1109/IMNC.1998.730053","DOIUrl":null,"url":null,"abstract":"1. Introductlon It is necessary to use the platinum as a bottom electrode material of the BST capacitor in highly integratad deveces, however, the Pt etching of the fine patterns is difficult due to the inherent non-reactivity of platinum. It Is revealed that the Pt etch slope of 80' was attained by OJ CI, chemistry b y elevating the substrate temperature up to 160°C. This resutlt is thought to be due to the reactlon of 0 species with TI layer and analyzed by TEM, XPS and AES.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.1998.730053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

1. Introductlon It is necessary to use the platinum as a bottom electrode material of the BST capacitor in highly integratad deveces, however, the Pt etching of the fine patterns is difficult due to the inherent non-reactivity of platinum. It Is revealed that the Pt etch slope of 80' was attained by OJ CI, chemistry b y elevating the substrate temperature up to 160°C. This resutlt is thought to be due to the reactlon of 0 species with TI layer and analyzed by TEM, XPS and AES.
高温铂蚀刻技术的研究
1. 在高集成度器件中,有必要使用铂作为BST电容器的底电极材料,但是由于铂固有的非反应性,对精细图案的Pt蚀刻是困难的。结果表明,通过将衬底温度提高到160℃,OJ - CI化学方法可获得80′的Pt蚀刻斜率。通过TEM, XPS和AES分析,认为该结果是由于0种与TI层的反应所致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信