高温铂蚀刻技术的研究

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI:10.1109/IMNC.1998.730053

Hyoun-woo Kim, B. Ju, B. Nam, W. Yoo, C. Kang, J. Moon, Moonyong Lee

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引用次数: 0

摘要

1. 在高集成度器件中，有必要使用铂作为BST电容器的底电极材料，但是由于铂固有的非反应性，对精细图案的Pt蚀刻是困难的。结果表明，通过将衬底温度提高到160℃，OJ - CI化学方法可获得80′的Pt蚀刻斜率。通过TEM, XPS和AES分析，认为该结果是由于0种与TI层的反应所致。

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A Study On The High Temperture Platinum Etching

1. Introductlon It is necessary to use the platinum as a bottom electrode material of the BST capacitor in highly integratad deveces, however, the Pt etching of the fine patterns is difficult due to the inherent non-reactivity of platinum. It Is revealed that the Pt etch slope of 80' was attained by OJ CI, chemistry b y elevating the substrate temperature up to 160°C. This resutlt is thought to be due to the reactlon of 0 species with TI layer and analyzed by TEM, XPS and AES.

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Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

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