利用多晶硅的RIE和[110]硅各向异性体刻蚀在KOH中制作梳子驱动驱动器的新方法

Hyung-Taek Lim, Yong-Kweon Kim
{"title":"利用多晶硅的RIE和[110]硅各向异性体刻蚀在KOH中制作梳子驱动驱动器的新方法","authors":"Hyung-Taek Lim, Yong-Kweon Kim","doi":"10.1117/12.324297","DOIUrl":null,"url":null,"abstract":"A bulk-micromachined interdigitated comb actuator supported by surface-micromachined polysilicon springs is proposed and fabricated for excitation of resonating momentum. The excitation force electrically generated by the interdigitated comb pair with a 420 height of (110) wafer is more effective than that obtained using a comb pair with a few height fabricated by a surface micromachining technique. The geometry of the interdigitated comb finger pair is 420 high, 20 wide, 5 apart from the neighboring interdigitated comb finger, respectively. A (110) oriented 420-thick Si wafer is used to fabricate the interdigitated comb electrode array using the technique of anisotropic bulk etching in KOH aqueous solution. A 5-thick phosphorous-doped LPCVD polysilicon film is used for fabrication of the flexures of the comb actuator using the technique of reactive ion etching. Repetition of the LPCVD Si3N4 film deposition and reactive ion etching process builds a Si3N4 structure, which envelopes and protects the released polysilicon structure from KOH aqueous etchant without an additional mask for passivation patterning. Using a double-sided aligned fabrication technique realizes not only polysilicon flexures formation on both sides of the actuator but also removal of two slant (111) planes in concave corners of the interdigitated comb finger array, which appear during (110) Si orientation-dependent etching and limit the interdigitated comb actuator design.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel Fabrication Of Comb Drive Actuator Using RIE Of Polysilicon And [110] Si Anisotropic Bulk Etching In KOH\",\"authors\":\"Hyung-Taek Lim, Yong-Kweon Kim\",\"doi\":\"10.1117/12.324297\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A bulk-micromachined interdigitated comb actuator supported by surface-micromachined polysilicon springs is proposed and fabricated for excitation of resonating momentum. The excitation force electrically generated by the interdigitated comb pair with a 420 height of (110) wafer is more effective than that obtained using a comb pair with a few height fabricated by a surface micromachining technique. The geometry of the interdigitated comb finger pair is 420 high, 20 wide, 5 apart from the neighboring interdigitated comb finger, respectively. A (110) oriented 420-thick Si wafer is used to fabricate the interdigitated comb electrode array using the technique of anisotropic bulk etching in KOH aqueous solution. A 5-thick phosphorous-doped LPCVD polysilicon film is used for fabrication of the flexures of the comb actuator using the technique of reactive ion etching. Repetition of the LPCVD Si3N4 film deposition and reactive ion etching process builds a Si3N4 structure, which envelopes and protects the released polysilicon structure from KOH aqueous etchant without an additional mask for passivation patterning. Using a double-sided aligned fabrication technique realizes not only polysilicon flexures formation on both sides of the actuator but also removal of two slant (111) planes in concave corners of the interdigitated comb finger array, which appear during (110) Si orientation-dependent etching and limit the interdigitated comb actuator design.\",\"PeriodicalId\":356908,\"journal\":{\"name\":\"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)\",\"volume\":\"94 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-07-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.324297\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.324297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出并制作了一种由表面微加工多晶硅弹簧支撑的本体微加工交错梳状驱动器,用于激发共振动量。由高度为420(110)晶圆的交叉梳对产生的电激力比用表面微加工技术制造的高度较小的梳对产生的电激力更有效。指间梳指对的几何高度为420,宽度为20,与相邻指间梳指之间的距离为5。采用KOH水溶液中各向异性体刻蚀技术,利用(110)取向的420厚硅片制备了交错梳状电极阵列。采用反应离子刻蚀技术,采用5厚掺磷LPCVD多晶硅薄膜制备梳状致动器的挠曲。重复LPCVD Si3N4薄膜沉积和反应离子蚀刻过程构建了Si3N4结构,该结构可以包裹并保护释放的多晶硅结构免受KOH水性蚀刻的影响,而无需额外的钝化图案掩膜。采用双面对齐制造技术不仅实现了在致动器两侧形成多晶硅挠曲,而且还消除了在(110)Si取向相关蚀刻过程中出现的两个斜(111)面,限制了互指梳状致动器的设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel Fabrication Of Comb Drive Actuator Using RIE Of Polysilicon And [110] Si Anisotropic Bulk Etching In KOH
A bulk-micromachined interdigitated comb actuator supported by surface-micromachined polysilicon springs is proposed and fabricated for excitation of resonating momentum. The excitation force electrically generated by the interdigitated comb pair with a 420 height of (110) wafer is more effective than that obtained using a comb pair with a few height fabricated by a surface micromachining technique. The geometry of the interdigitated comb finger pair is 420 high, 20 wide, 5 apart from the neighboring interdigitated comb finger, respectively. A (110) oriented 420-thick Si wafer is used to fabricate the interdigitated comb electrode array using the technique of anisotropic bulk etching in KOH aqueous solution. A 5-thick phosphorous-doped LPCVD polysilicon film is used for fabrication of the flexures of the comb actuator using the technique of reactive ion etching. Repetition of the LPCVD Si3N4 film deposition and reactive ion etching process builds a Si3N4 structure, which envelopes and protects the released polysilicon structure from KOH aqueous etchant without an additional mask for passivation patterning. Using a double-sided aligned fabrication technique realizes not only polysilicon flexures formation on both sides of the actuator but also removal of two slant (111) planes in concave corners of the interdigitated comb finger array, which appear during (110) Si orientation-dependent etching and limit the interdigitated comb actuator design.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信