发布求助
文献互助 智能选刊 最新文献

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)最新文献

筛选
英文 中文
Simulation of charge pumping current in hot-carrier degraded p-MOSFET's 热载流子退化p-MOSFET中电荷泵送电流的模拟
ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781145
G. Samudra, A. Yip, L. See
{"title":"Simulation of charge pumping current in hot-carrier degraded p-MOSFET's","authors":"G. Samudra, A. Yip, L. See","doi":"10.1109/SMELEC.1998.781145","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781145","url":null,"abstract":"Charge pumping is a widely used method of evaluating the Si-SiO/sub 2/ interfaces in MOSFETs. The modelling of this technique in a p-MOSFET using two-dimensional device simulator is presented. A two-dimensional transient model which accounts for the interface-state dynamics is employed to simulate the charge pumping in MOSFETs with good accuracy. The simulation results are substantiated by measurement results.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133783636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal budget adjustment of borophosphosilicate glass reflow-anneal for silicide process requirement 硅化工艺要求的硼磷硅酸盐玻璃回流退火热收支调整
ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781179
U. Hashim, B. Y. Majlis, S. Shaari
{"title":"Thermal budget adjustment of borophosphosilicate glass reflow-anneal for silicide process requirement","authors":"U. Hashim, B. Y. Majlis, S. Shaari","doi":"10.1109/SMELEC.1998.781179","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781179","url":null,"abstract":"Three process sequences of borophosphosilicate glass (BPSG) reflow have been tested and characterized. A combination of a CVD furnace and rapid thermal annealing has been used to see the impact on the BPSG reflow. Results obtained showed that the RTA process has the potential to compensate for the reduction of the CVD furnace process temperature. SEM micrographs have shown that the new BPSG process sequence exhibits similar glass flow characteristics to the conventional BPSG reflow process. On the other hand, rapid thermal annealing alone is not adequate to completely flow the glass.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134531548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AC conductivity of binary silver phosphate glasses 二元磷酸银玻璃的交流导电性
ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781148
S. P. Chow, S. A. Halim, M. L. Leong, H. Yow, H. Sidek, H. Senin
{"title":"AC conductivity of binary silver phosphate glasses","authors":"S. P. Chow, S. A. Halim, M. L. Leong, H. Yow, H. Sidek, H. Senin","doi":"10.1109/SMELEC.1998.781148","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781148","url":null,"abstract":"Samples of binary silver phosphate glasses with composition (Ag/sub 2/O)/sub x/(P/sub 2/O/sub 5/)/sub 1-x/ have been prepared and their AC electrical conductivities measured over a range of frequency, composition and temperature. It is observed that AC conductivity increases very gradually at low frequency (below 1 kHz), but rapidly at higher frequency (above 10 kHz). Conductivity as high as 10/sup -5/ Scm/sup -1/ has been observed depending on the composition, frequency and temperature of the samples. The conductivity increases almost linearly with the mole fraction of Ag/sub 2/O, and also increases with temperature. The Arrhenius plot is obeyed and an activation energy of 0.41 to 0.46 eV has been obtained.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134219214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of MOS transistor gate oxide breakdown on circuit performance MOS晶体管栅极氧化物击穿对电路性能的影响
ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781150
T. Yeoh, Shze-Jer Hu
{"title":"Influence of MOS transistor gate oxide breakdown on circuit performance","authors":"T. Yeoh, Shze-Jer Hu","doi":"10.1109/SMELEC.1998.781150","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781150","url":null,"abstract":"MOS transistor gate oxide breakdown is a common failure mechanism which needs to be understood in terms of its impact on circuit performance. Studies have shown that post MOS transistor gate oxide breakdown forms a phosphorous diffusion path in the gate oxide. This diffusion path originates from the phosphorous doped polysilicon gate. The effect of p- and n-channel gate oxide breakdown on the functionality of a four-inverter chain circuit is studied through SPICE simulations. Gate-to-drain oxide breakdown of either p- or n-channel transistors was found to significantly degrade overall circuit performance.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123547697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Back reflection and pump instability effects on a fiber laser system 光纤激光系统的背反射和泵浦不稳定性影响
ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781161
F. Isnin, M. K. Abdullah, V. Sinivasagam, T. Chin, H. Ahmad
{"title":"Back reflection and pump instability effects on a fiber laser system","authors":"F. Isnin, M. K. Abdullah, V. Sinivasagam, T. Chin, H. Ahmad","doi":"10.1109/SMELEC.1998.781161","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781161","url":null,"abstract":"A tunable ring configured erbium doped fiber laser (EDFL) system was developed and its dependency on signal back-reflection and pump instability is presented. The signal back-reflection was simulated by launching another signal tuned at exactly (+0.01 nm accuracy) the same wavelength into the output port of the EDFL system. The power of the simulating source was increased up to 3 mW launched power, while the ring laser output was observed for the peak power, peak power fluctuation, signal side mode suppression ratio, linewidth and lasing threshold. Real time monitoring of the laser output, pump output and wavelength fluctuations were observed on an optical spectrum analyzer (OSA). The pump source was a laser diode with a center frequency at a wavelength of 978 nm.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116650267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dielectric breakdown and electroforming phenomenon in the cadmium arsenide thin films devices 砷化镉薄膜器件中的介电击穿和电铸现象
ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781175
M. Din, R. D. Gould
{"title":"Dielectric breakdown and electroforming phenomenon in the cadmium arsenide thin films devices","authors":"M. Din, R. D. Gould","doi":"10.1109/SMELEC.1998.781175","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781175","url":null,"abstract":"In this high conductivity semiconductor material, it is not possible to distinguish between the onset of these two processes, and it is highly probable that the two processes are initiated simultaneously. Electroforming is normally observed in insulating materials (Ray and Hogarth 1984), where there is a very rapid increase in the current drawn at a particular moment. In the test device, a decrease in current was observed at the field F/sub b/, which may be identified with dielectric breakdown; however, after this event the samples showed the typical electroforming characteristic of voltage-controlled differential negative resistance (VCNR) for both increasing and decreasing voltages. The basic characteristics observed for both these phenomena are discussed in the paper.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131273476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of changing Al mole fraction on the performance of an InGaAlAs-InP DBRTD 改变Al摩尔分数对InGaAlAs-InP DBRTD性能的影响
ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781146
C. Lim, S. J. Chua, G. Karunasiri
{"title":"Effects of changing Al mole fraction on the performance of an InGaAlAs-InP DBRTD","authors":"C. Lim, S. J. Chua, G. Karunasiri","doi":"10.1109/SMELEC.1998.781146","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781146","url":null,"abstract":"The effects of changing the InAlGaAs alloy composition in the contact, barrier and well layers of a double barrier resonant tunnelling diode (DBRTD), lattice-matched to the InP substrate, on the transmission curves and the peak-to-valley current ratio (PVCD) have been studied. A simple RTD model, in which the applied bias is assumed to drop across the double barrier region, is used in the simulation. The Airy function formalism is used to solve the Schrodinger equation in the structure and the transfer matrix method is used to calculate the transmission coefficient, which is then used to calculate the Tsu and Esaki tunnelling current. It is found that among all the structures studied, RTDs with In/sub 0.52/Al/sub 0.48/As barriers and In/sub 0.52/Al/sub 0.48/As well and contact have the best performance.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127880193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated flash memory and logic testing-a high volume, low cost approach 集成闪存和逻辑测试-一种高容量，低成本的方法
ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781152
L. C. Yuin, Janaka Low Chee Kong, C. W. Chien
{"title":"Integrated flash memory and logic testing-a high volume, low cost approach","authors":"L. C. Yuin, Janaka Low Chee Kong, C. W. Chien","doi":"10.1109/SMELEC.1998.781152","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781152","url":null,"abstract":"The semiconductor industry's trend to offer more value-added products that integrate flash memory with logic devices poses a significant challenge to manufacturing test operations. This paper details those challenges and how they were systematically overcome on a lead product at Intel Penang. The end result is a manufacturing process whose productivity, cost and HVM (high volume manufacturing) indicators are equivalent to those of stand-alone logic devices. These techniques can be proliferated to other types of integrated devices.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125741368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effect of backside films on rapid thermal oxidation (RTO) growth on silicon wafers 背面膜对硅片快速热氧化生长的影响
ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781154
A. Omar, I. Ahmad
{"title":"The effect of backside films on rapid thermal oxidation (RTO) growth on silicon wafers","authors":"A. Omar, I. Ahmad","doi":"10.1109/SMELEC.1998.781154","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781154","url":null,"abstract":"The effect of backside films, namely silicon dioxide, silicon nitride and bare silicon on rapid thermal oxidation (RTO) growth on silicon wafers by the rapid thermal annealing technique was systematically studied. There was also a comparison study on the effect of doped backside films with phosphorus at 4/spl times/10/sup 14/ atoms/cm/sup 2/ by ion implantation at 100 keV and the undoped films. The RTO layer thickness has been measured by ellipsometry and the target thickness was 10 nm. The rapid thermal annealing system used was the AG Associates 2146 Heatpulse model. The temperature chosen was 1100/spl deg/C. It was demonstrated that thinner RTO layers could be obtained by having sufficient silicon dioxide film at the backside; however, the presence of doped backside layers has no effect on the tunnel oxide growth.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"68 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127972164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Beam propagation method study of wavelength dependent in directional coupler switch 定向耦合器开关中波长依赖的光束传播方法研究
ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781184
S. Shaari, K. Kandiah
{"title":"Beam propagation method study of wavelength dependent in directional coupler switch","authors":"S. Shaari, K. Kandiah","doi":"10.1109/SMELEC.1998.781184","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781184","url":null,"abstract":"Different coupling efficiencies experienced by different wavelengths have been observed in directional couplers by a BPM study. This behaviour continues to be observed in electro-optic directional couplers, such as LiNbO/sub 3/, when an external voltage is being applied. This property can lead to the development of a device which has the ability to manage the distribution of various optical wavelengths between 1.10 /spl mu/m and 1.55 /spl mu/m under the application of external voltages of <10 V.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132414686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信