ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)最新文献_第3页

Effects of scan angles in the far-field scanning method on the measurement of the mode field diameter 远场扫描法中扫描角度对模场直径测量的影响

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781163

S. Thirumeni, P. Poopalan, A. A. Hassan, H. Ahmad

引用次数: 0

Wafer fabrication ion implant charging-impact on gate oxide breakdown 晶圆制造离子植入充电对栅极氧化物击穿的影响

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781153

T. Yeoh, Shze-Jer Hu

引用次数: 0

Development of a pulse-width modulated power MOSFET-based audio amplifier 基于脉宽调制功率mosfet的音频放大器的研制

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781170

I. Aris, L. N. Hulley, N. Mariun, R. Sahbudin

引用次数: 0

The influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology 利用实验方法的统计设计研究结形成过程变量对扩散片电阻的影响

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781177

U. Hashim, A. Shaari, I. Ahmad, S. Shaari, B. Y. Majlis

{"title":"The influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology","authors":"U. Hashim, A. Shaari, I. Ahmad, S. Shaari, B. Y. Majlis","doi":"10.1109/SMELEC.1998.781177","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781177","url":null,"abstract":"The statistical design of experiments technique was used to study the influence of junction formation process variables on the diffusion sheet resistance. A two-level screening experiment with 2/sup 3/ factorial design was used to evaluate three process variables in eight combination runs. The factors were BF/sub 2/ and Ar implantation dose, drive-in temperature and drive-in time. Variance analysis was used to analyze the data and we found that all of the main variables were important for arsenic implanted wafers but only the drive-in temperature factor was important for boron implanted wafers. We also discovered that there was no significant interaction between the factors. For arsenic implanted wafers, which were driven-in at 950/spl deg/C, the measured sheet resistances were at between 110 and 130 /spl Omega///spl square/ while for wafers which were driven-in at 850/spl deg/C, the sheet resistances were measured at between 60 and 90 /spl Omega///spl square/. For boron implanted wafers, the measured sheet resistance values were found to be constant at about 30 /spl Omega///spl square/, regardless of drive-in temperature. The experimental data were used in regression equations to model the sheet resistance. By this, we have illustrated how the statistical design of experiments methodology can be used effectively in order to control the process performance.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121299729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Pump wavelength's influence in erbium-doped fibre amplifier performance 泵浦波长对掺铒光纤放大器性能的影响

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781164

S. Selvakennedy, M. Mahdi, P. Poopalan, H. Ahmad

{"title":"Pump wavelength's influence in erbium-doped fibre amplifier performance","authors":"S. Selvakennedy, M. Mahdi, P. Poopalan, H. Ahmad","doi":"10.1109/SMELEC.1998.781164","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781164","url":null,"abstract":"The erbium doped fibre amplifier (EDFA) has been extensively developed due to its compatibility with existing optical fibre systems, low insertion loss, low crosstalk, high gain, polarization insensitivity and low noise figure (NF). The preferable pumping wavelengths for EDFAs are 980 nm and 1480 nm, which creates a 3-level and 2-level system respectively. The advantages of 980 nm as a pumping wavelength compared to 1480 nm are full ion inversion, a lower noise figure and negligible excited state absorption (ESA). A model simulating the 3-level energy system of the Er-doped fibre amplifier (EDFA) in a co-propagating configuration for the 980 nm pump wavelength range is presented and discussed. The characteristics being considered for performance are gain, output signal power, excess pump power and noise figure. The theoretical model is developed to numerically solve the coupled differential equations of the pump and signal power evolution along the fibre. This numerical model uses the relaxation technique for convergence, whereas the differential equations are solved using the simple Euler method.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131600218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

New design of variable X-coupler optical waveguide passive device 可变x耦合器光波导无源器件的新设计

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781180

J. Y. Asous, S. Shaari

引用次数: 3

Semiconducting and magnetic properties of La/sub 0.67/Ca/sub 0.33/Mn/sub 1-x/Dy/sub x/O/sub 3/ ceramics La/sub 0.67/Ca/sub 0.33/Mn/sub 1-x/Dy/sub x/O/sub 3/陶瓷的半导体和磁性能

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781178

S. A. Halim, S. Koh, S. P. Chow, E. Saion, H. Mansor, W.Y.W. Daud

{"title":"Semiconducting and magnetic properties of La/sub 0.67/Ca/sub 0.33/Mn/sub 1-x/Dy/sub x/O/sub 3/ ceramics","authors":"S. A. Halim, S. Koh, S. P. Chow, E. Saion, H. Mansor, W.Y.W. Daud","doi":"10.1109/SMELEC.1998.781178","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781178","url":null,"abstract":"Electrical resistivity measurements of La/sub 0.67/Ca/sub 0.33/Mn/sub 1-x/Dy/sub x/O/sub 3/, x=0 to 0.12, ceramics have been studied using a standard four point probe technique, while the magnetic behaviour has been studied using AC susceptibility techniques. The transport properties show the transition from semiconducting to metallic conductivity at T/sub p/ and paramagnetic-ferromagnetic transitions, T/sub c/, were observed in the /spl chi/-temperature curves for all samples. The existence of metallic conductivity, T/sub p/, and ferromagnetism, T/sub c/, were found to be linearly correlated. This phenomenon of coexistence is due to the double exchange interaction of two electrons in Mn/sup 3+/-O/sup 2-/-Mn/sup 4+/ and Mn/sup 4+/-O/sup 2-/-Mn/sup 3+/ configuration which brings the system below T/sub c/ into a metallic state. Hence, it is observed that the Curie temperature T/sub c/ is closely related to the sharp decrease in electrical resistivity of the samples. However, both transition temperatures shift to lower temperatures as dysprosium doping increases, indicating the loss of ferromagnetic order and transport properties. As for the transport properties, the semiconductor model ln(/spl sigma/)/spl sim/(E/sub g//2kT) was used to explain the conduction mechanism of perovskite manganites above T/sub p/. It was concluded that the total conductivity /spl sigma//sub tot/ consists of the intrinsic and extrinsic components such that /spl sigma//sub tot/=/spl sigma//sub int/+/spl sigma//sub ext/. The energy gap decreases initially from 0.11 eV to a minimum value of 0.06 eV at x=0.03 and increases again to 0.08 eV at the composition of x=0.12 for the extrinsic region.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123181652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

EYDFL giving higher efficiency and smaller power fluctuation as compared to EDFL 与EDFL相比，EYDFL具有更高的效率和更小的功率波动

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781162

V. Sinivasagam, M. K. Abdullah, F. Isnin, H. Ahmad

引用次数: 1

Using curve-fitting optimisation technique to estimate power MOSFET model parameters for PECT II system 利用曲线拟合优化技术估计PECTⅱ系统的功率MOSFET模型参数

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781171

I. Aris, L. N. Hulley, N. Mariun, R. Sahbudin

{"title":"Using curve-fitting optimisation technique to estimate power MOSFET model parameters for PECT II system","authors":"I. Aris, L. N. Hulley, N. Mariun, R. Sahbudin","doi":"10.1109/SMELEC.1998.781171","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781171","url":null,"abstract":"This paper presents a proposed new structure of the power MOSFET model and its implementation in the HSPICE and PECT II (Power Electronics and Control Tool) packages. A fast and accurate technique for determining power MOSFET model parameters which introduces a curve-fitting optimisation technique is discussed in detail. The optimisation process generates automatically a set of device parameters based on the input specification, measured data and manufacturer's data sheets. The input procedure involves a netlist specifying parameter tolerances, component voltage and current limits and an initial guess to the selected parameter. Using curve fitting and iterative methods, the \"correct\" model is generated for utilisation in the simulation phase of both the HSPICE and PECT II packages. This method is then compared to that of a normal method which uses specific formulae to obtain power MOSFET model parameters. The results show that the curve-fitting optimisation technique produces more accurate power MOSFET model parameters than the other method. Both simulation and experimental results of the power MOSFET characteristics are also included in the discussion.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130264509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Numerical analysis for the characteristics of a QW-structure optoelectronic integrated device qw结构光电集成器件特性的数值分析

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781149

V. Ahmadi, M. Sheikhi

引用次数: 5