ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)最新文献_第2页

Testable ASIC design for a fuzzy logic based QRS complex detector 基于模糊逻辑的QRS复杂检测器的可测试ASIC设计

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781174

K. Azad, Z. M. Darus, M.A.M. Ali

引用次数: 3

BSIM3v3 based degradation compact model for circuit simulation of non-volatile flash memories 基于BSIM3v3的非易失性闪存电路仿真退化压缩模型

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781158

F. Schuler, O. Kowarik, K. Hoffmann

引用次数: 1

Design and characterisation of thick oxide parasitic transistor for MIMOS 0.8-/spl mu/m CMOS technology development 用于MIMOS的厚氧化物寄生晶体管的设计与表征0.8-/spl mu/m CMOS技术开发

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781165

Roy Kooh Jinn Chye, M. Ahmad, T. H. Ting, B.S. Suparjo, R. Wagiran

{"title":"Design and characterisation of thick oxide parasitic transistor for MIMOS 0.8-/spl mu/m CMOS technology development","authors":"Roy Kooh Jinn Chye, M. Ahmad, T. H. Ting, B.S. Suparjo, R. Wagiran","doi":"10.1109/SMELEC.1998.781165","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781165","url":null,"abstract":"The concept, design and characterisation of thick oxide parasitic transistors is investigated in this paper. The outcome includes the design from concept of two classes of thick oxide parasitic transistors, which consist of four different test structures. Both classes were used to evaluate the possibility of parasitic FET occurrence. They are class 1 (poly/field oxide and metal 1/field oxide) and class 2 (metal 1/BPSG and metal 2/BPSG/USG). Class 1 designs involved the conventional isolation technology used in the development of MIMOS 0.8 /spl mu/m CMOS technology while class 2 were designed to imitate the condition of metal routing in circuit design. The results of some n- and p-channel thick oxide parasitic transistors are presented in this paper. All field threshold voltages obtained for the test structures are above 12 V. CADENCE Virtuoso Layout editor is used to generate the test structure layouts. The results of this study complement other test structures for MIMOS 0.8 /spl mu/m CMOS technology development.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122409334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Elimination of metal bridging failure in VLSI metallization and yield enhancement of FLAT ROM device VLSI金属化中金属桥接失效的消除与FLAT ROM器件良率的提高

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781142

H. Younan

引用次数: 0

A study on EKC265 bath life and fluorine and carbon contamination on bond pads EKC265熔池寿命及焊垫氟碳污染的研究

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781140

L. An, K. Lai, W. Chay, Y. Hua

引用次数: 2

Characterization of thin oxide removal by rapid thermal annealing treatment 快速热退火处理去除薄氧化物的表征

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781182

U. Hashim, S. Shaari, B. Y. Majlis

引用次数: 1

Silica based optical waveguide coupler with asymmetric structure in single-mode to multi-mode coupling regime 单模-多模耦合非对称结构硅基光波导耦合器

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781190

S. Shaari, Yussa Ananda

引用次数: 1

High field conduction mechanism of the evaporated cadmium arsenide thin films 蒸发砷化镉薄膜的高场导电机理

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781173

M. Din, R. D. Gould

{"title":"High field conduction mechanism of the evaporated cadmium arsenide thin films","authors":"M. Din, R. D. Gould","doi":"10.1109/SMELEC.1998.781173","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781173","url":null,"abstract":"Cadmium arsenide is a II-V semiconductor which exhibits n-type intrinsic conductivity with high mobility. Potential applications include magnetoresistors and both thermal and photodetectors, which require electrical characterisation over a wide range of deposition and measurement conditions. The films were prepared by vacuum evaporation with deposition rates of 0.5 nm s/sup -1/ and substrate temperatures maintained at constant values of 293 K-393 K. Sandwich-type samples were deposited with film thicknesses of 0.1-1.1 /spl mu/m using evaporated electrodes of Ag and occasionally Au or Al. Above a typical electric field F/sub b/ of up to 5/spl times/10/sup 7/ V m/sup -1/, all samples showed instabilities characteristic of dielectric breakdown or electroforming. Below this field, they showed a high-field conduction process with log J/spl prop/V/sup 1/2/, where J is the current density and V the applied voltage. This type of dependence is indicative of carrier excitation over a potential barrier whose effective barrier height has been lowered by the high electric field. The field-lowering coefficient /spl beta/ had a value of (1.2-5.3)/spl times/10/sup -5/ eV m/sup 1/2/ V/sup -1/2/, which is reasonably consistent with the theoretical value of /spl beta//sub PF/=2.19/spl times/10/sup -5/ eV m/sup 1/2/ V/sup -1/2/ expected when the field-lowering occurs at donor-like centres in the semiconductor (Poole-Frenkel effect). For thinner films, Schottky emission was more probable. The effects of the film thickness, electrode materials, deposition rate, and substrate temperature on the conductivity behaviour are discussed.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"29 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120925873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Characterisation of cascaded EDFA with the inclusion of an interstage optical element 级联EDFA的特征与级间光学元件的包含

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781160

N. Ismail, M. Mahdi, P. Poopalan, H. Ahmad

引用次数: 1

Effects of the operating conditions on the performance of IMPATT amplifiers 工作条件对IMPATT放大器性能的影响

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI: 10.1109/SMELEC.1998.781156

E.-S.A. El-Badaway, S. H. Ibrahim, H. El-Motaafy

引用次数: 1