BSIM3v3 based degradation compact model for circuit simulation of non-volatile flash memories

Abstract

A BSIM3v3.1 based flash memory degradation compact model for circuit simulators has been developed. By a physics based modification of the Fowler-Nordheim equation, the tunnel current can be calculated considering both positive and negative oxide charges. It has been shown that every known endurance characteristic can be simulated by this model. It allows a precise simulation of worst case operation of flash memories and an optimized circuit design.