VLSI金属化中金属桥接失效的消除与FLAT ROM器件良率的提高

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI:10.1109/SMELEC.1998.781142

H. Younan

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引用次数: 0

摘要

几批晶圆片(FLAT ROM)报告了低收率(5-20%)问题。使用RIE, SEM和EDX技术来确定根本原因。在特定位置发现铝金属细丝，导致金属桥接失效。它们被发现是由于两个多晶硅层之间的狭窄空间和金属蚀刻不足。消除这些金属细丝的解决方案是将L90的重叠从100增加到135，或者改变两个聚层之间的空间。在使用新的over蚀刻配方后[135]，晶圆分选率大大提高。

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Elimination of metal bridging failure in VLSI metallization and yield enhancement of FLAT ROM device

A few lots of wafers (FLAT ROM) were reported with low yield (5-20%) issue. RIE, SEM and EDX techniques were used to identify the root causes. Al metal filaments were found at particular locations, which had resulted in metal bridging failure. They were found to be due to the narrow space between the two polysilicon layers and insufficient metal etching. The solution to eliminate these metal filaments is to increase overetch of L90 from 100 to 135 or change the space between the two poly layers. After using a new overetch recipe [135], the wafer sort yield was greatly enhanced.

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ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)

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