Numerical analysis for the characteristics of a QW-structure optoelectronic integrated device

Abstract

Several functions such as optical amplification, switching, and bistability can be obtained by monolithic integration of optoelectronic devices. A physical model for the operation of an optoelectronic integrated device (OEID) composed of a heterojunction phototransistor (HPT) monolithically integrated over a quantum well laser diode (QW-LD) is developed to investigate quantitatively the dynamic response of the QW-OEID. We have considered the internal optical feedback and its effect on the frequency response of the device. Furthermore, a physical model is developed to include the effect of lateral diffusion of carriers inside the device. The results of the numerical analysis for the dynamic response and its dependency on these parameters are presented. It is shown that the quantum well structure leads to enhancement of the optical frequency response of the OEID. The relaxation oscillation time and the overshoot in the optical step and pulse response are reduced.