热载流子退化p-MOSFET中电荷泵送电流的模拟

ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187) Pub Date : 1998-11-24 DOI:10.1109/SMELEC.1998.781145

G. Samudra, A. Yip, L. See

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引用次数: 0

摘要

电荷泵送是一种广泛使用的评估mosfet中Si-SiO/sub - 2/接口的方法。利用二维器件模拟器对该技术在p-MOSFET中的应用进行了建模。采用考虑界面态动力学的二维瞬态模型对mosfet中的电荷泵浦进行了较高精度的模拟。仿真结果与实测结果相吻合。

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Simulation of charge pumping current in hot-carrier degraded p-MOSFET's

Charge pumping is a widely used method of evaluating the Si-SiO/sub 2/ interfaces in MOSFETs. The modelling of this technique in a p-MOSFET using two-dimensional device simulator is presented. A two-dimensional transient model which accounts for the interface-state dynamics is employed to simulate the charge pumping in MOSFETs with good accuracy. The simulation results are substantiated by measurement results.

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ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)

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