2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)最新文献_第7页

Trace metal contamination analysis of wafer edge and bevel by automated VPD ICP-MS: CFM: Contamination free manufacturing 用自动VPD ICP-MS分析晶圆片边缘和斜角的痕量金属污染:CFM:无污染制造

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373201

Vijay Chowdhury, David Simionas, Kiera Fu, Janie Huang, P. Sun

引用次数: 1

Defect learning methodology applied to microbump process at 20μm pitch and below 缺陷学习方法应用于20μm及以下的微凸点工艺

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373210

M. Liebens, J. Slabbekoorn, A. Miller, E. Beyne, M. Störring, S. Hiebert, A. Cross

{"title":"Defect learning methodology applied to microbump process at 20μm pitch and below","authors":"M. Liebens, J. Slabbekoorn, A. Miller, E. Beyne, M. Störring, S. Hiebert, A. Cross","doi":"10.1109/ASMC.2018.8373210","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373210","url":null,"abstract":"Over the last years, 3D TSV technology and 3D stacking have moved into the preproduction and yield ramp phase. The characterization of many of the different critical modules within the 3D stacking integration flows is becoming more and more crucial. Microbump dimensions are being scaled down to the pitch of 20µm and below. This scaling is required in order to achieve higher interconnect densities. For yielding vertical interconnects in die-to-die and die-to-wafer stacking, highly accurate and repeatable measurements and inspections of microbumps are an absolute must for this technology to become a viable industrial option. Microbump process control is usually a hybrid approach of inspecting the full wafer including all microbumps and specific microbump metrology. This eventually enables correct die classification and selection of known good die for further integration in 3D packages. Prior to being able to classify and disposition die based on microbump integrity, yield critical defect types need to be identified, defect mechanisms need to be understood and dimensional features impacting further processing need to be characterized. This paper addresses these requirements and elaborates on the applied defect learning methodology based on a significant amount of microbump process monitor wafers. Yield loss by every defect type was quantified and root causes for these yield critical defect types were discovered. From this analysis, further process improvement projects can be initiated, parameters for statistical process control derived and known good die for yielding die-to-die and die-to-wafer stacking can be identified and separated from failing die.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129859922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Hybrid clean for applied materials 200mm centura reduced pressure EPI application 混合清洁应用材料200mm百度减压EPI应用

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373139

T. Ackermann, B. Binder, J.J.E. Schmidt, Joerg Radecker, C. Caballero

引用次数: 0

On the increase of the controllability matrix rank in non-threaded run-to-run control 非线程运行对运行控制中可控性矩阵秩的增加

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373153

T. Korabi, G. Graton, E. E. Adel, M. Ouladsine, J. Pinaton

引用次数: 0

Innovative use of FA techniques SCM and OBIRCH along with TCAD to resolve junction scaling issues at advanced technology nodes 创新地使用FA技术，SCM和OBIRCH以及TCAD来解决先进技术节点的结缩放问题

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373206

Gregory M. Johnson, J. Nxumalo, Ankur Arya, Jeffrey Johnson, Qun Gao, Brian Greene

引用次数: 1

Advanced defect inspection techniques for NFET and PFET defectivity at 7nm gate poly removal process 先进的fet缺陷检测技术和7nm栅极聚去除工艺中fet缺陷的检测技术

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373197

Ian Tolle, Michael M. Daino

引用次数: 1

Bare wafer analysis for wet cleaning efficiency — The impact of classification and sensitivity 湿法清洗效率的裸晶圆分析。分类和灵敏度的影响

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373202

K. Wendt, Fabian Wilbers, J. Ruth, C. Lorant, F. Holsteyns, John N. Newby, G. Bast, V. Sundar

{"title":"Bare wafer analysis for wet cleaning efficiency — The impact of classification and sensitivity","authors":"K. Wendt, Fabian Wilbers, J. Ruth, C. Lorant, F. Holsteyns, John N. Newby, G. Bast, V. Sundar","doi":"10.1109/ASMC.2018.8373202","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373202","url":null,"abstract":"The continued drive in the semiconductor industry for smaller, faster and cheaper integrated circuits has driven the industry to the 10nm technology node and beyond and ushered in a new era of high-performance 3-dimensional transistor structures. Consequently, the surface preparation is becoming more challenging especially particulate contamination will continue to be a concern at increasingly demanding levels. The Maly equation, with its use of a Poisson distribution, continues to be used to predict the allowable defect density of front surface particles based on yield (targeting 99.9%) for a specific \"killer defect\" size, i.e. the critical particle diameter for a specific technology node, which is now less than the MPU physical gate length. This results in equipment particle specifications and provides a more tangible Roadmap1. For cleaning processes, it is not only useful to determine how well the process is removing particulate contamination but also on how many defects are being introduced during this particular cleaning step. This insight is required to get a state on the cleanliness of the process and the related tool. For this calculation, a general pre and post defect difference of the processed wafer isn't any longer sufficient, but an improved personalized defect classification is mandatory. For example, during the pre process particle inspection scan of the wafer, it is required to track the individual position of each defect and to classify each of them as ‘cleanable’ or ‘non-cleanable’. When performing the post process particle inspection scan, this tracking will allow determining how many ‘cleanable’ defects could be removed during a wet cleaning process and will result in the ‘cleaning efficiency’ (CE) of a particular process executed on a particular tool. Furthermore, by considering the added defects as process induced defects (PID) the cleanliness of the process/tool can be determined.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125743296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing flexibility and robustness of semiconductor production by using autonomous modular services 通过使用自主模块化服务，提高半导体生产的灵活性和稳健性

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373171

S. Keil, G. Schneider, Mathias Kuttig, A. Deutschländer, Arnold Lange, H. Heinrich

引用次数: 2

Determining a security roadmap for the microelectronics industry 确定微电子工业的安全路线图

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373213

J. Moyne, Supika Mashiro, David Gross

{"title":"Determining a security roadmap for the microelectronics industry","authors":"J. Moyne, Supika Mashiro, David Gross","doi":"10.1109/ASMC.2018.8373213","DOIUrl":"https://doi.org/10.1109/ASMC.2018.8373213","url":null,"abstract":"The evolution of the microelectronics manufacturing industry is characterized by increased complexity, analysis, integration, distribution, data sharing and collaboration, all of which is enabled by the big data explosion. This evolution affords a number of opportunities in improved productivity and quality, and reduced cost, however it also brings with it a number of risks associated with maintaining security of data systems. The International Roadmap for Devices and System Factory Integration International Focus Team (IRDS FI IFT) determined that a security technology roadmap for the industry is needed to better understand the needs, challenges and potential solutions for security in the microelectronics industry and its supply chain. As a first step in providing this roadmap, the IFT conducted a security survey, soliciting input from users, suppliers and OEMs. Preliminary results indicate that data partitioning with IP protection is the number one topic of concern, with the need for industry-wide standards as the second most important topic. Further, the \"fear\" of security breach is considered to be a significant hindrance to Advanced Process Control efforts as well as use of cloud-based solutions. The IRDS FI IFT will endeavor to provide components of a security roadmap for the industry in the 2018 FI chapter, leveraging the output of the survey effort combined with follow-up discussions with users and consultations with experts.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125221475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Fully automated in-line optical test system: Advanced materials & photonics 全自动在线光学测试系统:先进材料与光子学

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2018-04-01 DOI: 10.1109/ASMC.2018.8373215

Shuren Hu, A. Stricker, K. McLean, Calvin Ma, S. Roy, Dean Percy, J. Cartier, D. Clark, R. van Roijen, Bart Green, K. Dezfulian, Louis Medina, J. Ferrario, Dave Riggs, K. Giewont

引用次数: 3