Hybrid clean for applied materials 200mm centura reduced pressure EPI application

T. Ackermann, B. Binder, J.J.E. Schmidt, Joerg Radecker, C. Caballero
{"title":"Hybrid clean for applied materials 200mm centura reduced pressure EPI application","authors":"T. Ackermann, B. Binder, J.J.E. Schmidt, Joerg Radecker, C. Caballero","doi":"10.1109/ASMC.2018.8373139","DOIUrl":null,"url":null,"abstract":"A new approach for post deposition in situ HCL cleaning the Applied Materials 200mm Reduced Pressure Epitaxy chamber was tested on a tool in a production environment within a joint CIP between Infineon Technology, Dresden and Applied Materials. This Hybrid Clean method utilizes three recent introduced hardware upgrades for the RP Epi Centura chamber. The items had been upgraded to enable Hybrid Clean: Vita controller to replace the SBC (single board computing), Motorized Wafer Lift to replace the Pneumatic Lift and Fast PCV (pressure control valve) to replace the conventional PCV. Hybrid clean method proved to be able to increase the throughput by shorten the clean recipe time after each wafer and reduces the cost of consumables by reducing the amount of HCL (hydrogen chloride) clean gas to be used. Long term stability of Hybrid Clean was demonstrated during a 1000 wafer marathon.","PeriodicalId":349004,"journal":{"name":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2018.8373139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A new approach for post deposition in situ HCL cleaning the Applied Materials 200mm Reduced Pressure Epitaxy chamber was tested on a tool in a production environment within a joint CIP between Infineon Technology, Dresden and Applied Materials. This Hybrid Clean method utilizes three recent introduced hardware upgrades for the RP Epi Centura chamber. The items had been upgraded to enable Hybrid Clean: Vita controller to replace the SBC (single board computing), Motorized Wafer Lift to replace the Pneumatic Lift and Fast PCV (pressure control valve) to replace the conventional PCV. Hybrid clean method proved to be able to increase the throughput by shorten the clean recipe time after each wafer and reduces the cost of consumables by reducing the amount of HCL (hydrogen chloride) clean gas to be used. Long term stability of Hybrid Clean was demonstrated during a 1000 wafer marathon.
混合清洁应用材料200mm百度减压EPI应用
在英飞凌科技、德累斯顿和应用材料公司的联合CIP生产环境中,在工具上测试了一种原位沉积HCL清洗应用材料公司200mm减压外延腔的新方法。这种混合清洁方法利用了三个最近引入的RP Epi Centura腔的硬件升级。这些项目已经升级为Hybrid Clean: Vita控制器取代SBC(单板计算),电动晶圆举升取代气动举升,快速PCV(压力控制阀)取代传统的PCV。混合清洁方法被证明能够通过缩短每片后的清洁配方时间来提高吞吐量,并通过减少HCL(氯化氢)清洁气体的使用量来降低耗材成本。在1000晶圆马拉松中,证明了Hybrid Clean的长期稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信