RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics最新文献_第4页

Numerical investigation of channel width variation in junctionless transistors performance 无结晶体管性能中通道宽度变化的数值研究

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706483

A. Dehzangi, F. Larki, B. Majlis, M. Hamidon, P. Menon, A. Jalar, M. Islam, S. M. Md Ali

引用次数: 2

High power LED heat dissipation analysis using cylindrical Al based slug using Ansys 基于Ansys的圆柱形铝基段塞大功率LED散热分析

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706504

R. Vairavan, Z. Sauli, V. Retnasamy

引用次数: 3

Schottky barrier lowering effect on graphene nanoribbon based schottky diode 石墨烯纳米带基肖特基二极管的肖特基势垒降低效应

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706543

Wong King Kiat, R. Ismail, M. Ahmadi

{"title":"Schottky barrier lowering effect on graphene nanoribbon based schottky diode","authors":"Wong King Kiat, R. Ismail, M. Ahmadi","doi":"10.1109/RSM.2013.6706543","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706543","url":null,"abstract":"A two-dimensional honeycomb lattice of single layer of carbon called graphene is a very interesting material that exhibits high electron mobility at room temperature. This unique property holds a promising potential to replace current silicon technology in the future. However graphene is a gapless material which is a major problem in semiconductor economy. To overcome this problem graphene nanoribbon is introduced where the band-gap of graphene nanoribbon can be easily obtained by controlling the width of the ribbon. In this paper, schottky barrier lowering effect on graphene nanoribbon based schottky barrier diode is investigated. Schottky barrier effect alters the schottky barrier height and also the overall performance of schottky barrier diode. The study of the relationship between applied voltage and schottky barrier lowering effect for non-degenerate region and degenerate region is presented. As the applied voltage is increased, the schottky barrier lowering is also increasing but the increment only increases until certain point. After that, effect starts to decline due to the ambipolar characteristic of graphene nanoribbon. Degenerate region shows higher value of schottky barrier lowering compared to non-degenerate region is reported. Besides that, higher temperature value resulted in higher schottky barrier lowering effect is also reported.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128666914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Design and simulation of piezoelectric micro power harvester for capturing acoustic vibrations 声学振动采集压电微功率采集器的设计与仿真

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706556

Mohd H. S. Alrashdan, B. Majlis, A. A. Hamzah, Noraini Marsi

{"title":"Design and simulation of piezoelectric micro power harvester for capturing acoustic vibrations","authors":"Mohd H. S. Alrashdan, B. Majlis, A. A. Hamzah, Noraini Marsi","doi":"10.1109/RSM.2013.6706556","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706556","url":null,"abstract":"Piezoelectric Micro-Power Harvester (PMPH), harvests mechanical vibration sources available in the environment and converts it to usable electric power via piezoelectric effects. The low power requirements and small device dimensions enable PMPH to supply enough power necessary to a variety of applications such as wireless sensor nodes, wrist watches and cell phone signals, thus proving to be an excellent alternative source for traditional lithium iodide battery especially in body sensor nodes. In this paper we design PMPH that is able to harvest environmental vibration sounds and convert it to usable electrical power for artificial cochlea. Spring mass damper system with single degree of freedom is used to model PMPH. COMSOL Multiphysics 4.2 is used to simulate PMPH. a linear relationship between voltage and external load for piezoelectric materials during Static analysis is observed, Eigenfrequency is used to find the resonance frequencies for six modes of operation and its deflection shape, PMPH harvest the maximum acoustic vibration at first mode of operation at 589 Hz. Simulation results using Transient analysis show that PMPH total displacement about 6 μm and output voltage at center of piezoelectric material about 4*10-15Vp-p at steady state and can harvest acoustic vibration at 598Hz and convert it to electric power about 23nW, which is sufficient for cochlear implant application.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125599512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

3D electromagnetic simulation of interconnect fault inspection based on magnetic field behavior 基于磁场特性的互连故障检测三维电磁仿真

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706572

S. Soeung, N. B. Z. Ali, M. H. M. Md Khir

{"title":"3D electromagnetic simulation of interconnect fault inspection based on magnetic field behavior","authors":"S. Soeung, N. B. Z. Ali, M. H. M. Md Khir","doi":"10.1109/RSM.2013.6706572","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706572","url":null,"abstract":"This paper presents the 3D electromagnetic simulation investigation of magnetic field behavior of faulty and fault free interconnects in Computer Simulation Technology (CST) Microwave Studio. The interconnects have been modeled in three conditions: short fault, open fault, and normal. The simulations of interconnect fault inspection have been performed on two different observations. First on the induced magnetic field intensity behavior where the conductive lines are excited by voltage ports. The induced magnetic field intensities are detected by virtual probes available in CST at the location of 3 mm above the lines. Second observation is on the changes of the induced voltages across the eddy current coil sensor. The interconnects are exposed to an alternating magnetic field generating secondary magnetic field. This field induces changes of voltage which are detected by eddy current sensor placed at 1.5 mm above the interconnects. The simulation results generated from both cases have shown that in the presence of the short faults on interconnect, the peak magnetic field intensity and induced voltage are higher compared to the normal or reference interconnect of 0.708 mV. Whereas, open or discontinuity faults on the lines induced lower magnetic field intensity and voltage compared to the normal lines voltage of 0.708 mV.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"23 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125290954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Pressure distribution characterization in forward facing step (FFS) microchannel using Ansys 基于Ansys的前向阶跃(FFS)微通道压力分布表征

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706476

N. S. Nadzri, V. Retnasamy, Z. Sauli, S. Taniselass, T. Mei

引用次数: 0

Fabrication of the Trapezoidal electrodes and Electrets material for electrostatic energy harvester 静电能量收集器用梯形电极及驻极体材料的制备

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706459

M. Ahmad, M. H. M. Md Khir, J. Dennis

{"title":"Fabrication of the Trapezoidal electrodes and Electrets material for electrostatic energy harvester","authors":"M. Ahmad, M. H. M. Md Khir, J. Dennis","doi":"10.1109/RSM.2013.6706459","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706459","url":null,"abstract":"Conversion of the mechanical vibration into electrical energy has been found feasible with MEMS (Micro-Electro-Mechanical-System) electrostatic energy harvesting method. The electrostatic energy harvesting device is fabricated on a silicon wafer for use on miniaturize applications. This paper presents the detail fabrication processes of the electrostatic energy harvester components, i.e. the Trapezoidal electrodes and Electrets. The trapezoidal electrodes structure comprises of the seismic mass, serpentine beams and Aluminum electrodes whereas the electrets is made up of Silicon Dioxides (SiO2). The energy harvester components are designed with Cadence Virtuoso software and later fabricated at the wafer foundry leveraging the 0.35 μm CMOS processes on 200 mm silicon wafers. The trapezoidal electrodes and electrets fabrications went through seven and two masking steps respectively. Performance of the electrets material are evaluated with Corona charging method. Characterization results show that the CVD oxide exhibits good charge retention capability, hence is recommended for application as electrets material on the vibration-based electrostatic energy harvester.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125432622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design optimization of MEMS dual-leg shaped piezoresistive microcantilever MEMS双腿型压阻微悬臂的设计优化

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706555

R. A. Rahim, B. Bais, B. Majlis, Sheik Fareed

{"title":"Design optimization of MEMS dual-leg shaped piezoresistive microcantilever","authors":"R. A. Rahim, B. Bais, B. Majlis, Sheik Fareed","doi":"10.1109/RSM.2013.6706555","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706555","url":null,"abstract":"In this paper, an optimization on the mechanical behaviour of silicon piezoresistive microcantilever (PRM) has been carried out. Using CoventorWare 2008, the mechanical behavior of the PRM structure was investigated by studying few contributing factors that affect the performance of the device. The performance was represented with mechanical displacement of the suspended PRM sensor with regards to various factors such as the microcantilever shape and geometrical dimensions, the materials and the effect of incorporating stress concentration region (SCR) on the device structure. In this research work, a single-layer piezoresistive microcantilever in which both piezoresistor and microcantilever structures are made of the same material of single-crystalline silicon is utilized. Two dual-leg shaped piezoresistive microcantilever designs have been proposed: piezoresistive microcantilever with and without a square hole. From the simulation results, it can be seen that the maximum displacement is observed at maximum microcantilever's length and minimum thickness. The incorporation of a square hole as an SCR not only shows a significant increase in Mises stress value but also in the displacement of the microcantilever structure. Single-crystalline Si was chosen as the device material for the fabrication of single-layer piezoresistive microcantilever due to its high piezoresistive coefficients and thermal conductivity.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126661534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Hysteresis behaviour of top-down fabricated ZnO nanowire transistors 自上而下制备ZnO纳米线晶体管的磁滞特性

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706553

S. M. Sultan, P. Ashburn, R. Ismail, H. Chong

引用次数: 0

Effects of annealing temperature on current-voltage characteristics of TiO2 thin film by sol-gel process on silicon substrate for biosensor application 退火温度对溶胶-凝胶法制备生物传感器用二氧化钛薄膜电流-电压特性的影响

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706499

Sh. Nadzirah, U. Hashim

引用次数: 10