RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics最新文献

Capacitance-voltage hysteresis of MIS device with PMMA:TiO2 nanocomposite as gate dielectric PMMA:TiO2纳米复合材料栅极介质MIS器件的电容-电压滞回特性

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-12-01 DOI: 10.1109/RSM.2013.6706532

L. N. Ismail, S. Adnan, M. Sauqi, M. N. Asiah, Z. Habibah, S. H. Herman, M. Rusop

{"title":"Capacitance-voltage hysteresis of MIS device with PMMA:TiO2 nanocomposite as gate dielectric","authors":"L. N. Ismail, S. Adnan, M. Sauqi, M. N. Asiah, Z. Habibah, S. H. Herman, M. Rusop","doi":"10.1109/RSM.2013.6706532","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706532","url":null,"abstract":"In this paper we study the hysteresis in metal-insulator-semiconductor (MIS) devices fabricated with nanocomposite poly (methyl methacrylate): titanium dioxide (PMMA:TiO2) on n-tyse Si as dielectric and semiconductor layers, respectively. The capacitance-voltage (C-V) and current-voltage (I-V) characteristic of MIS were studied as a function of different frequency varied at 10 kHz until 10 MHz. C-V measurement were carried out by applying the sweeping voltage form -8V to +6V. Meanwhile for I-V measurement the applied voltage is from -5V to +5V. From the C-V curve, it shows typical behavior of n-type MIS. As the frequency increased, the maximum capacitance, Cmax is reduced. Transition from accumulation to depletion region are faster at frequency 10MHz compare to 10 kHz is due to the reactions of mobile charge carriers at the interface dielectric-semiconductor layer. When we applied positive and negative voltage bias to the MIS there is shifting in flat band voltage, VFB. The shifting is towards negative direction (more negative voltage) that is due to the charge trapping in the dielectric-semiconductor interface. Similar characteristics were at I-V results which showing shifting to more negative voltage proven that electrons are temporarily trapped and de-trapped at the interface of dielectric-semiconductor layer.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131264998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Double gate junctionless MOSFET simulation and comparison with analytical model 双栅无结MOSFET仿真及与解析模型的比较

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706578

Guang-Ming Zhang, Yi Su, Hsin-Yi Hsin, Y. Tsai

{"title":"Double gate junctionless MOSFET simulation and comparison with analytical model","authors":"Guang-Ming Zhang, Yi Su, Hsin-Yi Hsin, Y. Tsai","doi":"10.1109/RSM.2013.6706578","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706578","url":null,"abstract":"This paper uses the C++ to develop an adapted band matrix solver to simulate the i-v curve and the drain current of the 2-D double-gate n-channel MOSFET, including different doping concentrations which from 5×10 (cm-3) to 5×10 (cm-3) and channel thickness which from 5 nm to 15 nm. And it discusses the threshold voltage from the i-vg curve and selects the more appropriate doping concentration and channel thickness to complete the following experiments. And then it simulates if-vg curve to determine threshold voltage which can present the channel on-off situation and calculates drain current which is in different gate voltage. It also can simulate the electric potential of the x-axis and y-axis. In the figure of the electric potential we can obtain the depletion width. It also analyzes the subthreshold, the linear and the saturation region in i-v curve, and we can find out the values of sub-threshold swing in the subthreshold region of the i-v curve and the value of the drain current in the saturation region of the i-v curve. It compares the results with the other reference papers. Finally, the equations of the threshold voltage can be developed, and we calculate the threshold voltage of double-gate n-channel MOSFET. The result obtained by the equation of the threshold voltage will be compared with result by 2-D simulation. The depletion width can be obtained as an analytical equation. The analytical depletion width can be verified by the figure of the x-axis and y-axis electric potential from 2-D simulation. The 2-D simulation also verifies the result with the drain current equation which is obtained by Pois-son's equation. For circuit application, an inverter including a double-gate n-channel MOSFET and a 100kΩ resistor will be used to simulate the vo-vi characteristics and analyzes the parameters of the inverter (e.g. VOh, VOl, Vih, Vil, VS), and the noise margin (e.g. NML, NMH) will be calculated in order to determine the inverter's performance and quality.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121822394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Ba0.7 Sr0.3 TiO3 thin film dielectric properties with different deposition layer Ba0.7 Sr0.3 TiO3薄膜的介电性能随沉积层的不同而不同

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706520

T. Y. Chin, Z. Sauli, V. Retnasamy, N. Ramli

引用次数: 0

Analytical modeling and simulation of a CMOS-MEMS cantilever based CO2 sensor for medical applications 医疗用CMOS-MEMS悬臂式CO2传感器的分析建模与仿真

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706475

A. Mirza, N. H. Hamid, M. Khir, J. Dennis, K. Ashraf, M. T. Jan, M. Shoaib

引用次数: 5

A sensitivity study of piezoresistive pressure sensor for robotic hand 机械人手压阻式压力传感器的灵敏度研究

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706574

Ahmed M. M. Almassri, W. Hasan, S. A. Ahmad, A. J. Ishak

引用次数: 15

Effect of anatase TiO2 overlayer on the photovoltaic properties of rutile phase nanostructured dye-sensitized solar cell 锐钛矿型TiO2包覆层对金红石相纳米结构染料敏化太阳能电池光电性能的影响

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706525

M. K. Ahmad, Murakami Kenji

引用次数: 2

Effect of microchannel geometry in fluid flow for PDMS based device 基于PDMS的微通道几何形状对流体流动的影响

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706573

M. R. Wee, M. R. Buyong, B. Majlis

{"title":"Effect of microchannel geometry in fluid flow for PDMS based device","authors":"M. R. Wee, M. R. Buyong, B. Majlis","doi":"10.1109/RSM.2013.6706573","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706573","url":null,"abstract":"Microfluidic has become an important component in “lab on chip” device. This portable device has a lot of potential in medical diagnostic to inform the result spontaneously to the patient with only a small volume of sample and reagent. The device's fabrication using Polydimethylsiloxane has become conventional materials which use soft lithography technique developed by Whitesides. However, the inconvenience from this method is the channel fabricated will have a rectangular cross section. From macroscale perspectives, we suggest that circular shape is the best choice to obtain a better performance from the device even though the fabrication of circular microchannel is still a huge obstacle to be figured out. In this paper, we present a fluid flow simulation using finite element COMSOL module microfluidic for circular and rectangular microchannel. Through this simulation, we can see the impact of microchannel shape through the difference in pressure along with velocity and shear rate. From the simulation, the data provided show that a circular channel reduce almost 10 % of the pressure applied to flow the fluid but also 50% of the shear rate. The future work of this study is to fabricate a simple and low cost round microchannel and integrate it in the next lab on chip device.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114561609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+Argon gaseous SF6+氩气反应离子浸渍后铂沉积薄片的润湿性分析

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706518

A. T. Z. Yeow, V. Retnasamy, Z. Sauli, G. S. Chui

引用次数: 0

Calibration of the density-gradient TCAD model for germanium FinFETs 锗finfet密度梯度TCAD模型的校正

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706493

Hardik N Mehta, S. Lodha, U. Ganguly, S. Ganguly

引用次数: 2

Electrical and structural characterization of Zn doped CuGaO2 films 锌掺杂CuGaO2薄膜的电学和结构表征

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706503

A. Alias, K. A. Mohamad, K. Uesugi, H. Fukuda

{"title":"Electrical and structural characterization of Zn doped CuGaO2 films","authors":"A. Alias, K. A. Mohamad, K. Uesugi, H. Fukuda","doi":"10.1109/RSM.2013.6706503","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706503","url":null,"abstract":"Oxide materials have been widely used in opto-electro devices due to their wide bandgap energy, high optical transparency in the visible light region, and wide range resistance. Recently, delafossite CuMO2 (M=Al, Ga, In) have been widely studied for p-type oxide semiconductors. In this study, CuGaO2 was chosen due to its smaller lattice mismatch with ZnO compared with CuAlO2 for the possibility of p-n junction device in the future work. Zn as impurity atoms was introduced to fabricate quaternary CuZnGaO2 films to reduce lattice mismatch with ZnO. In order to study the effect of the substitute site of the Zn ion for generating donor or acceptor, 3 methods of preparation of the Cu-Zn-Ga-O sol solution were also demonstrated. In this paper, the electrical and structural properties of Zn doped on the sol-gel derived CuGaO2 films have been investigated. The diffraction angle of the CuGaO2 films are shifted to lower angle with increasing Zn%, indicating the lattice expansion which proved that the introducing Zn as impurity atoms was able to reduce lattice mismatch between CuGaO2 and ZnO. While the curve in the negative gate bias Vg proved the hole dominated transport properties. The curve in the positive gate bias can be suppressed by introducing Zn.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123189384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0