Schottky barrier lowering effect on graphene nanoribbon based schottky diode

Abstract

A two-dimensional honeycomb lattice of single layer of carbon called graphene is a very interesting material that exhibits high electron mobility at room temperature. This unique property holds a promising potential to replace current silicon technology in the future. However graphene is a gapless material which is a major problem in semiconductor economy. To overcome this problem graphene nanoribbon is introduced where the band-gap of graphene nanoribbon can be easily obtained by controlling the width of the ribbon. In this paper, schottky barrier lowering effect on graphene nanoribbon based schottky barrier diode is investigated. Schottky barrier effect alters the schottky barrier height and also the overall performance of schottky barrier diode. The study of the relationship between applied voltage and schottky barrier lowering effect for non-degenerate region and degenerate region is presented. As the applied voltage is increased, the schottky barrier lowering is also increasing but the increment only increases until certain point. After that, effect starts to decline due to the ambipolar characteristic of graphene nanoribbon. Degenerate region shows higher value of schottky barrier lowering compared to non-degenerate region is reported. Besides that, higher temperature value resulted in higher schottky barrier lowering effect is also reported.