2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)最新文献_第2页

Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type $p$-GaN Gate HEMTs Mg激活不足对肖特基型p -GaN栅极hemt动态阈值电压的影响

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147398

Jiahui Sun, Zheyang Zheng, Li Zhang, Yat Hon Ng, Ji Shu, Tao Chen, K. J. Chen

{"title":"Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type $p$-GaN Gate HEMTs","authors":"Jiahui Sun, Zheyang Zheng, Li Zhang, Yat Hon Ng, Ji Shu, Tao Chen, K. J. Chen","doi":"10.1109/ISPSD57135.2023.10147398","DOIUrl":"https://doi.org/10.1109/ISPSD57135.2023.10147398","url":null,"abstract":"To further reduce the forward gate current of Schottky-type <tex>$p$</tex>-GaN gate HEMTs, inadequate Mg activation in <tex>$p$</tex>-GaN is deployed in this work, which tends to convert the conventional <tex>$p$</tex>-GaN into insulating GaN with high concentration of Mg passivated by hydrogens. The free hole concentration in <tex>$p$</tex>-GaN is reduced, and so is the hole deficiency effect that is the main cause of dynamic threshold voltage (<tex>$V_{text{TH}}$</tex>) in commercial Schottky-type <tex>$p$</tex>-GaN gate HEMTs. However, plenty of electron traps left in <tex>$p$</tex>-GaN lead to more significant dynamic <tex>$V_{text{TH}}$</tex> shift (up to 6 V) under reverse gate bias (<tex>$V_{text{GSQ}}$</tex>, up to -13 V), as revealed by the <tex>$V_{text{TH}}$</tex> recovery processes under different conditions of light illumination and forward gate bias. Fortunately, under forward <tex>$V_{text{GSQ}}$</tex>, the fully depleted <tex>$p$</tex>-GaN layer facilitates electron acceleration by the electric field, suppressing the electron trapping and consequent dynamic <tex>$V_{text{TH}}$</tex> shift. Besides, deeper-level electron trapping in AlGaN may account for the slight dynamic <tex>$V_{text{TH}}$</tex> shift under <tex>$V_{text{GSQ}}geq 7mathrm{V}$</tex>.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131299587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Enhanced gate breakdown and electroluminescence in p-GaN gate HEMTs under pulsed switching conditions 脉冲开关条件下p-GaN栅极hemt的栅极击穿和电致发光增强

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147654

Huan Wang, Yulian Yin, Fengwei Ji, Jiahong Du, Haoran Li, Changhui Zhao, Baikui Li, Cungang Hu, Wenping Cao, Xi Tang, Shu-Ting Yang

引用次数: 0

Application-Oriented Characterization of Thermally Optimized, Asymmetrical Single Chip Packages for 100 V GaN HEMTs 面向应用的100 V GaN hemt热优化、非对称单芯片封装表征

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147544

Dominik Koch, V. Polezhaev, Ankit Sharma, K. M. Barón, T. Huesgen, I. Kallfass

{"title":"Application-Oriented Characterization of Thermally Optimized, Asymmetrical Single Chip Packages for 100 V GaN HEMTs","authors":"Dominik Koch, V. Polezhaev, Ankit Sharma, K. M. Barón, T. Huesgen, I. Kallfass","doi":"10.1109/ISPSD57135.2023.10147544","DOIUrl":"https://doi.org/10.1109/ISPSD57135.2023.10147544","url":null,"abstract":"Gallium nitride transistors have a smaller die area compared to silicon-based devices, which can lead to thermal challenges in high current density applications. Therefore, thermally optimized packages with a high heat spreading capability in combination with small parasitic are necessary. This work investigates the thermal performance a $7 mathrm{m}Omega$, 100 V GaN HEMT in a thermally optimized single chip package with integrated RTD and compares it to the commercial counterpart. The thermal optimized package shows a significantly better transient thermal impedance resulting in a static thermal resistance of 3.1 K/W, which is a 20 % reduction in comparison to the COTS package. The integrated RTD trace has a relative reaction time of 590 ms, which is 30-fold slower in comparison to the junction temperature. To show the identical electrical behavior, although the single chip package is larger, it is compared with the commercial off-the-shelf package and a $5 mathrm{m}Omega$, 100 V GaN single chip package in a 300 kHz, 48 V buck converter. Both $7 mathrm{m}Omega$ versions have identical efficiencies of ≈97.5 % up to 50 A output current, slightly outperforming the $5 mathrm{m}Omega$ GaN transistor. With its combination of improved thermal characteristics and low-inductance, the thermally optimized package of the GaN device offers more degrees of freedom in the design of power converter to exploit trade-offs between longer lifetime, higher temperature operation and power density.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"15 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123426797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

1 kV Vertical $beta$-Ga2O3 Heterojunction Barrier Schottky Diode with Hybrid Unipolar and Bipolar Operation 1 kV垂直$beta$-Ga2O3杂化单极和双极肖特基二极管

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147686

Weibing Hao, Qiming He, Zhao Han, Xiaolong Zhao, Guangwei Xu, Shu-Ting Yang, Shibing Long

引用次数: 0

Short-Circuit Rugged 1.2 kV SiC MOSFET with a Non-Linear Dielectric Gate Stack 短路加固1.2 kV SiC MOSFET非线性介电栅堆叠

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147604

M. Boccarossa, L. Maresca, A. Borghese, M. Riccio, G. Breglio, A. Irace, G. Salvatore

引用次数: 0

Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations 栅极形态对不同沟道取向下GaN-on - Si MOS沟道- hemt电性能的影响

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147642

C. Piotrowic, B. Mohamad, P. F. P. P. Rocha, N. Malbert, S. Ruel, P. Pimenta-Barros, M. Jaud, L. Vauche, C. L. Royer

{"title":"Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations","authors":"C. Piotrowic, B. Mohamad, P. F. P. P. Rocha, N. Malbert, S. Ruel, P. Pimenta-Barros, M. Jaud, L. Vauche, C. L. Royer","doi":"10.1109/ISPSD57135.2023.10147642","DOIUrl":"https://doi.org/10.1109/ISPSD57135.2023.10147642","url":null,"abstract":"In this paper, we study the effect of the gate morphology and the impact of the crystallographic channel orientation on the on-state electrical performances of the GaN-on-Si MOS-HEMTs with a fully recessed gate. By combining physical and chemical characterizations (TEM, EDX, and AFM), experimental measurements and TCAD simulations, the effect of dry-etching and wet cleaning on the gate morphology and their consequences on electrical performances are studied. Moreover, an anisotropy behavior with the Atomic Layer Etching (ALE) and wet processes between $(11overline{2}0)$ and $(1overline{1}00)$ planes is highlighted. Using the new partitioning methodology, the contributions of the bottom and sidewall regions are evaluated separately in terms of resistance and mobility. The good agreement between TCAD simulations and experimental $I_{D}(V_{G}$) characteristics validates the methodology and highlights the gate morphology importance for the device's on-state performances in terms of resistance, mobility, threshold voltage and subthreshold slope.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130814456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

p-GaN HEMT Hard Switching Fault Type Short-Circuit Detection Based on the Gate Schottky-Barrier Leakage Current and Using a Dual-Channel Segmented CMOS buffer Gate-Driver 基于栅极肖特基势垒泄漏电流和双通道分段CMOS缓冲栅极驱动器的p-GaN HEMT硬开关故障型短路检测

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147669

Y. Barazi, F. Richardeau, S. Vinnac, N. Rouger

引用次数: 0

NiO Junction Termination Extension for Ga2O3 Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed 用于Ga2O3器件的NiO结终端扩展:高阻塞场，低电容和快速开关速度

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147704

M. Xiao, Boyan Wang, Ruizhe Zhang, Q. Song, Joseph Spencer, Z. Du, Yuan Qin, K. Sasaki, Han Wang, M. Tadjer, Yuhao Zhang

{"title":"NiO Junction Termination Extension for Ga2O3 Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed","authors":"M. Xiao, Boyan Wang, Ruizhe Zhang, Q. Song, Joseph Spencer, Z. Du, Yuan Qin, K. Sasaki, Han Wang, M. Tadjer, Yuhao Zhang","doi":"10.1109/ISPSD57135.2023.10147704","DOIUrl":"https://doi.org/10.1109/ISPSD57135.2023.10147704","url":null,"abstract":"This work investigates the blocking electric field, capacitance, and switching speed of the p-type NiO based junction termination extension (JTE) for vertical Ga<inf>2</inf>O<inf>3</inf> devices. The JTE comprises multiple NiO layers sputtered on the surface of Ga<inf>2</inf>O<inf>3</inf> drift region, the acceptor concentration and length of which are carefully optimized. This NiO JTE enabled a breakdown voltage over 3 kV in vertical Ga<inf>2</inf>O<inf>3</inf> diodes with a parallel-plate junction field of 4.2 MV/cm. Large-area Ga<inf>2</inf>O<inf>3</inf> p-n diodes with a current over 1 A were fabricated to evaluate the JTE's capacitance and switching characteristics. The JTE accounts for only, ~11 % of the junction capacitance of this 1 A diode, and the percentage is expected to be even smaller for higher-current diodes. The turn-ON/OFF speed and reverse recovery time of the diode are comparable to commercial SiC Schottky barrier diodes. These results show the good promise of NiO JTE as an effective edge termination for Ga<inf>2</inf>O<inf>3</inf> power devices.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"140 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121005116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Isolated JFET Design and Performance Analyze by Experiment Based on Standard 0.18µm BCD Platform 基于标准0.18µm BCD平台的隔离型JFET设计及性能实验分析

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147671

Dingxiang Ma, Yue Gao, Dican Hou, Zhangyi’an Yuan, M. Qiao, Shaowei Zhen, Bo Zhang

引用次数: 0

Impacts of $n$-GaN Doping Concentration on Gate Reliability of $p-n$ Junction/AlGaN/GaN HEMTs n -GaN掺杂浓度对p-n结/AlGaN/GaN hemt栅可靠性的影响

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147583

Chengcai Wang, Haohao Chen, Zuoheng Jiang, Junting Chen, M. Hua

{"title":"Impacts of $n$-GaN Doping Concentration on Gate Reliability of $p-n$ Junction/AlGaN/GaN HEMTs","authors":"Chengcai Wang, Haohao Chen, Zuoheng Jiang, Junting Chen, M. Hua","doi":"10.1109/ISPSD57135.2023.10147583","DOIUrl":"https://doi.org/10.1109/ISPSD57135.2023.10147583","url":null,"abstract":"In this work, the <tex>$p-n$</tex> junction (PNJ)/AlGaN/GaN HEMTs with different effective <tex>$n$</tex>-GaN doping concentrations (<tex>$N_{mathrm{D}}$</tex>) of <tex>$1.7times 10^{20}$</tex> cm−3, <tex>$2.6times 10^{19}$</tex> cm−3 and <tex>$1times 10^{17}$</tex> cm−3 are comparatively studied to reveal the impacts of <tex>$N_{mathrm{D}}$</tex> on gate reliability. With lower <tex>$N_{mathrm{D}}$</tex>, gate leakage reduces, and forward gate breakdown voltage boosts up to 18.6 V, whereas the maximum applicable gate voltage for a 10-year lifetime will not continually increase when <tex>$N_{mathrm{D}}$</tex> decreases to <tex>$1times 10^{17}$</tex> cm−3. This feature is attributed to premature breakdown caused by electric-field crowding at the surface of the fully depleted n-GaN. To fully exploit the reliability of the PNJ-HEMTs, it is suggested that the <tex>$N_{mathrm{D}}$</tex> of PNJ-HEMTs should be carefully designed to widen the depletion region in <tex>$p-n$</tex> junction appropriately, while premature breakdown caused by electric-field crowding at the surface should be avoided.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131141975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0