Huan Wang, Yulian Yin, Fengwei Ji, Jiahong Du, Haoran Li, Changhui Zhao, Baikui Li, Cungang Hu, Wenping Cao, Xi Tang, Shu-Ting Yang
{"title":"Enhanced gate breakdown and electroluminescence in p-GaN gate HEMTs under pulsed switching conditions","authors":"Huan Wang, Yulian Yin, Fengwei Ji, Jiahong Du, Haoran Li, Changhui Zhao, Baikui Li, Cungang Hu, Wenping Cao, Xi Tang, Shu-Ting Yang","doi":"10.1109/ISPSD57135.2023.10147654","DOIUrl":null,"url":null,"abstract":"In this work, enhanced gate breakdown under pulsed switching conditions were observed and investigated in Schottky-type p-GaN gate HEMTs. The pulsed time-dependent breakdown (TDB) and pulsed gate breakdown characteristics both featured a positive frequency dependence. At a gate bias of 10 V, the effective total lifetime extended from 170 s to 670 s with the switching frequency increased from 5 Hz to 10 kHz. By time-dependent electroluminescence (TDEL) characteristics on devices with semi-transparent gate electrodes, the high-energy ultraviolet emission increased at a higher switching frequency, indicating an enhanced hole injection into the p-GaN/AlGaN/GaN heterostructure. The enhanced hole injection annihilated more injected electrons, leading to the suppressed hot-electron effect, as well as the enhanced gate breakdown.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD57135.2023.10147654","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, enhanced gate breakdown under pulsed switching conditions were observed and investigated in Schottky-type p-GaN gate HEMTs. The pulsed time-dependent breakdown (TDB) and pulsed gate breakdown characteristics both featured a positive frequency dependence. At a gate bias of 10 V, the effective total lifetime extended from 170 s to 670 s with the switching frequency increased from 5 Hz to 10 kHz. By time-dependent electroluminescence (TDEL) characteristics on devices with semi-transparent gate electrodes, the high-energy ultraviolet emission increased at a higher switching frequency, indicating an enhanced hole injection into the p-GaN/AlGaN/GaN heterostructure. The enhanced hole injection annihilated more injected electrons, leading to the suppressed hot-electron effect, as well as the enhanced gate breakdown.