Enhanced gate breakdown and electroluminescence in p-GaN gate HEMTs under pulsed switching conditions

Huan Wang, Yulian Yin, Fengwei Ji, Jiahong Du, Haoran Li, Changhui Zhao, Baikui Li, Cungang Hu, Wenping Cao, Xi Tang, Shu-Ting Yang
{"title":"Enhanced gate breakdown and electroluminescence in p-GaN gate HEMTs under pulsed switching conditions","authors":"Huan Wang, Yulian Yin, Fengwei Ji, Jiahong Du, Haoran Li, Changhui Zhao, Baikui Li, Cungang Hu, Wenping Cao, Xi Tang, Shu-Ting Yang","doi":"10.1109/ISPSD57135.2023.10147654","DOIUrl":null,"url":null,"abstract":"In this work, enhanced gate breakdown under pulsed switching conditions were observed and investigated in Schottky-type p-GaN gate HEMTs. The pulsed time-dependent breakdown (TDB) and pulsed gate breakdown characteristics both featured a positive frequency dependence. At a gate bias of 10 V, the effective total lifetime extended from 170 s to 670 s with the switching frequency increased from 5 Hz to 10 kHz. By time-dependent electroluminescence (TDEL) characteristics on devices with semi-transparent gate electrodes, the high-energy ultraviolet emission increased at a higher switching frequency, indicating an enhanced hole injection into the p-GaN/AlGaN/GaN heterostructure. The enhanced hole injection annihilated more injected electrons, leading to the suppressed hot-electron effect, as well as the enhanced gate breakdown.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD57135.2023.10147654","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In this work, enhanced gate breakdown under pulsed switching conditions were observed and investigated in Schottky-type p-GaN gate HEMTs. The pulsed time-dependent breakdown (TDB) and pulsed gate breakdown characteristics both featured a positive frequency dependence. At a gate bias of 10 V, the effective total lifetime extended from 170 s to 670 s with the switching frequency increased from 5 Hz to 10 kHz. By time-dependent electroluminescence (TDEL) characteristics on devices with semi-transparent gate electrodes, the high-energy ultraviolet emission increased at a higher switching frequency, indicating an enhanced hole injection into the p-GaN/AlGaN/GaN heterostructure. The enhanced hole injection annihilated more injected electrons, leading to the suppressed hot-electron effect, as well as the enhanced gate breakdown.
脉冲开关条件下p-GaN栅极hemt的栅极击穿和电致发光增强
在这项工作中,在肖特基型p-GaN栅极hemt中观察和研究了脉冲开关条件下增强的栅极击穿。脉冲时间相关击穿(TDB)和脉冲门击穿特性都具有正的频率相关性。当栅极偏置为10 V时,有效总寿命从170 s延长到670 s,开关频率从5 Hz增加到10 kHz。通过对具有半透明栅电极的器件的时间相关电致发光(TDEL)特性分析,在更高的开关频率下,高能紫外发射增加,表明p-GaN/AlGaN/GaN异质结构的空穴注入增强。增强的空穴注入湮灭了更多的注入电子,从而抑制了热电子效应,增强了栅极击穿。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信