2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)最新文献

Surge Current Ruggedness in Vertical GaN-on-GaN PiN Diode: Role of Conductivity Modulation 垂直GaN-on-GaN引脚二极管的浪涌电流稳稳性:电导率调制的作用

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147664

Jiahong Du, Shu-Ting Yang, Guangwei Xu, Shibing Long

引用次数: 0

Awards of ISPSD 2022: The 34th International Symposium on Power Semiconductor Devices and ICS ISPSD 2022:第34届功率半导体器件与ICS国际研讨会

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ispsd57135.2023.10147522

引用次数: 0

Gate Current Peaks Due to CGD Overcharge in SiC MOSFETs Under Short-Circuit Test 短路测试下SiC mosfet中CGD过充引起的栅极电流峰值

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147438

Sara Kochoska, Jaume Roig Guitart, Lukas Richert, B. Vlachakis

引用次数: 1

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs P-GaN栅极hemt开关暂态分析的动态门电容模型

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147460

Caien Sun, Zixu Niu, Shu Yang

引用次数: 0

Comprehensive MVSG Compact Model for Power GaN Devices 功率GaN器件的综合MVSG紧凑模型

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147658

Ryan Fang, Yijing Feng, Jessica Chong, Kaiman Chan, U. Radhakrishna, Lan We

{"title":"Comprehensive MVSG Compact Model for Power GaN Devices","authors":"Ryan Fang, Yijing Feng, Jessica Chong, Kaiman Chan, U. Radhakrishna, Lan We","doi":"10.1109/ISPSD57135.2023.10147658","DOIUrl":"https://doi.org/10.1109/ISPSD57135.2023.10147658","url":null,"abstract":"GaN HEMTs are actively explored for power elec-tronics (e.g. power converters) due to its superior material properties. High-quality compact model addressing critical behaviors of power GaN devices is in demand for large-scale industry deployment. This paper presents the MVSG model for power GaN devices, which has versatile field plate and gate current configurations. The paper also highlights the modeling strategies for important behaviors such as thermal effects, trapping effects and p-GaN gate stack. Thermal effects are represented through a flexible thermal sub-circuit accounting for both self-heating and external thermal coupling. A comprehensive charge trapping model included in MVSG is able to describe both gate- and drain-lag. The newest addition, the p-GaN module, is also introduced in order to accurately model both static and dynamic behaviors due to the Schottky or hybrid p-GaN gate stacks, which is widely used in power GaN devices to achieve enhancement mode operations. The paper explained the physics-based power MVSG model implementation together with the underlying physics. Examples of model usage demonstrate the effectiveness of this comprehensive power GaN compact model.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129481201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching 电感功率开关中p栅GaN HEMT的栅极寿命

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147610

Bixuan Wang, Ruizhe Zhang, Hengyu Wang, Quanbo He, Q. Song, Qiang Li, F. Udrea, Yuhao Zhang

{"title":"Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching","authors":"Bixuan Wang, Ruizhe Zhang, Hengyu Wang, Quanbo He, Q. Song, Qiang Li, F. Udrea, Yuhao Zhang","doi":"10.1109/ISPSD57135.2023.10147610","DOIUrl":"https://doi.org/10.1109/ISPSD57135.2023.10147610","url":null,"abstract":"The small gate overvoltage margin is a crucial concern in applications of GaN Schottky-type p-gate high electron mobility transistors (SP-HEMTs). The parasitic inductance of the gate loop can induce repetitive gate-voltage ($V_{G}$) spikes during the device turn-on transients. However, the gate lifetime of the GaN SP-HEMTs under $V_{G}$ overshoot in power converters still remains unclear. We fill this gap by developing a new circuit method to measure the gate switching lifetime. The method features several capabilities: 1) LC-resonance-like $V_{G}$ overshoots with pulse width down to 20 ns and $dV_{G} /dt$ up to 2 V/ns; 2) adjustable power loop condition including the drain-source grounded (DSG) as well as the hard switching (HSW); and 3) repetitive switching test at an adjustable switching frequency ($f_{text{sw}}$). We use this method to test over 150 devices, and found that the gate lifetimes under a certain peak magnitude of $V_{G}$ overshoot ($V_{mathrm{G}(text{PK})}$) can be fitted by both Weibull and Lognormal distributions. The gate lifetime is primarily determined by the number of switching cycles and is higher under the HSW than under the DSG conditions. Finally, the max $V_{mathrm{G}(text{PK})}$ for 10-year gate lifetime is predicted under different $f_{text{SW}}$ in both DSG and HSW conditions. The results provide direct reference for GaN SP-HEMT's converter applications and a new method for the device gate qualification.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116508227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The 36th International Symposium on Power Semiconductor Devices and ICs 第36届功率半导体器件与集成电路国际研讨会

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ispsd57135.2023.10147733

引用次数: 0

Improvement of Surge Current Capability in SBD-embedded SiC MOSFETs by Introducing Trigger p-n Diodes 引入触发p-n二极管改善sbd嵌入式SiC mosfet的浪涌电流能力

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147726

T. Ohashi, H. Kono, S. Asaba, Hideki Hayakawa, Takahiro Ogata, R. Iijima

引用次数: 1

A Novel Junction Termination Technique with Excellent Cost-Performance and Extraordinary Anti-Charge-Deviation Ability 一种新型结端技术，具有优异的性价比和超强的抗电荷偏差能力

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147685

Junji Cheng, Weisen Meng, B. Yi, Haimeng Huang, Keqiang Ma, Xinkai Guo, Hongqiang Yang, Zhiming Wang, Guoyi Zhang

引用次数: 0

Switching Performance of GaN $p$-FET-bridge (PFB-) HEMTs Studied with Mixed-mode TCAD Simulation GaN $p$- fet桥(PFB-) hemt开关性能的混合模式TCAD仿真研究

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI: 10.1109/ISPSD57135.2023.10147458

Junting Chen, Tao Chen, Zuoheng Jiang, Chengcai Wang, Zheyang Zheng, Jin Wei, K. J. Chen, M. Hua

引用次数: 0