A Novel Junction Termination Technique with Excellent Cost-Performance and Extraordinary Anti-Charge-Deviation Ability

A novel junction termination technique (JTT) is proposed, which combines three techniques of the optimum variation lateral doping (OPTVLD), buried-layer (BL) and high-k (HK). By utilizing the OPTVLD and BL techniques, an ideal electric field distribution is achieved, resulting in excellent cost-performance. Moreover, by adopting a SrTiO3 film with high permittivity, which induces bound charges that respond automatically to the deviated charges, an extraordinary anti-charge-deviation ability is obtained for the first time. According to the simulation results, in comparison with the conventional JTT structure without the SrTiO3 film, the proposed one gets better process windows increased by 93.3%, 73.9%, 73.9% and 61.3%, with respect to the deviation factors of dose, temperature, heating time and interface charge, respectively. Moreover, since the proposed JTT can be realized by BiCMOS-compatible process, it is budget-friendly and highly feasible.