垂直GaN-on-GaN引脚二极管的浪涌电流稳稳性:电导率调制的作用

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI:10.1109/ISPSD57135.2023.10147664

Jiahong Du, Shu-Ting Yang, Guangwei Xu, Shibing Long

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引用次数: 0

摘要

在这项工作中，我们研究了浪涌电流的坚固性和电导率调制在垂直GaN-on-GaN PiN二极管中的作用。本文系统地研究了垂直GaN-on-GaN引脚二极管在$t_{\text{浪涌}}$(5µs~10 ms)和峰值高达10 kA/cm2的情况下浪涌电流性能的变化。由于直接带隙GaN中理想的光子和热增强电导率调制，在GaN-on-GaN垂直引脚二极管中实现了282 J/cm^{2}$的高浪涌能量密度，显示了GaN-on-GaN垂直引脚二极管在高功率电子应用中的巨大潜力。

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Surge Current Ruggedness in Vertical GaN-on-GaN PiN Diode: Role of Conductivity Modulation

In this work, we investigate the surge current ruggedness and role of the conductivity modulation in the vertical GaN-on-GaN PiN diode. With varying $t_{\text{surge}}$ (5 µs~10 ms) and [peak Up to 10 kA/cm2, the evolvement of surge current capability of vertical GaN-on-GaN PiN diode has been systematically investigated. Owing to the desirable photon- and thermally-enhanced conductivity modulation in the direct-bandgap GaN, a high surge energy density of $282 J/cm^{2}$ has been realized in the vertical GaN-on-GaN PiN diode, showing great potential of vertical GaN-on-GaN PiN diodes for high power electronic applications.

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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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