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2012 IEEE International Reliability Physics Symposium (IRPS)最新文献

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Reliability evaluations of ECP tools and chemistries ECP工具和化学品的可靠性评估
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241897
G. Hall, D. Allman, G. Piatt, P. Hulse
{"title":"Reliability evaluations of ECP tools and chemistries","authors":"G. Hall, D. Allman, G. Piatt, P. Hulse","doi":"10.1109/IRPS.2012.6241897","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241897","url":null,"abstract":"Microstructural considerations were studied in a tool qualification for ECP in a dual-damascene 110nm Cu/low-k BEOL process. Wafer Level tests (HTS, Isothermal EM) using standard SM/SIV and EM test structures were used to compare two ECP tools and chemistries, and sensitivities were further investigated with materials analysis consisting of Elemental (TOF-SIMS), EBSD (texture analysis) and grain-size analysis. It is found that the differences in the relative grain-size, and impurity content both contributed to the improvement of the TTF for EM and SM/SIV. Interpretation of the SIV data used a proportional hazards model, incorporating basic elements of stochastic geometry to find a scaling form which can be used to extract the relative change in Cu mobility.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125863102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Experimental characterization of process corners effect on SRAM alpha and neutron Soft Error Rates 工艺角对SRAM α和中子软误差率影响的实验表征
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241813
G. Gasiot, M. Glorieux, S. Uznanski, S. Clerc, P. Roche
{"title":"Experimental characterization of process corners effect on SRAM alpha and neutron Soft Error Rates","authors":"G. Gasiot, M. Glorieux, S. Uznanski, S. Clerc, P. Roche","doi":"10.1109/IRPS.2012.6241813","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241813","url":null,"abstract":"This paper shows alpha and neutron experimental Soft Error Rate characterization of a SRAM test vehicle processed with different process corners in order to emulate the variability encountered in volume production. It allows assessing large variability effects with few samples that are compatible with accelerated SER testing. This allows investigating the effect of variability in mass-production on soft error rate of deca-nanometric technologies.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127663319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Total ionizing dose effects on ultra thin buried oxide floating body memories 总电离剂量对超薄埋藏氧化物漂浮体记忆的影响
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241920
N. Mahatme, peixiong zhao, R. Reed, B. Bhuva, A. Griffoni, E. Simoen, M. Aoulaiche, D. Linten, M. Jurczak, G. Groeseneken
{"title":"Total ionizing dose effects on ultra thin buried oxide floating body memories","authors":"N. Mahatme, peixiong zhao, R. Reed, B. Bhuva, A. Griffoni, E. Simoen, M. Aoulaiche, D. Linten, M. Jurczak, G. Groeseneken","doi":"10.1109/IRPS.2012.6241920","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241920","url":null,"abstract":"The total-ionizing-dose response of 1-transistor floating body memory cells is investigated. Factors affecting the robustness of these novel devices for high reliability applications in space environments are investigated. Memory failure is shown to result from radiation-induced threshold voltage shifts and increased leakage. Results from this work can also be used to uncover the effects of process and transistor level degradation on memory performance.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122331124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Spectroscopic charge pumping in the presence of high densities of bulk dielectric traps 高密度体介电阱存在时的光谱电荷泵送
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241931
J. Ryan, R. Southwick, J. Campbell, K. Cheung, C. Young, J. Suehle
{"title":"Spectroscopic charge pumping in the presence of high densities of bulk dielectric traps","authors":"J. Ryan, R. Southwick, J. Campbell, K. Cheung, C. Young, J. Suehle","doi":"10.1109/IRPS.2012.6241931","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241931","url":null,"abstract":"We demonstrate the extension of the recently developed spectroscopic charge-pumping (CP) technique to high-k gate stacks. To deal with the high density of bulk traps, we develop an experimentally based methodology to remove the bulk trap contribution from the measured CP data. We demonstrate the capability of the spectroscopic CP technique to measure band edge states and show that the traditional U-shaped continuum of band edge states is not intrinsic to Si/SiO2 interfaces.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126941165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 氮化镓hemt中电流坍塌与铁掺杂谱的实验与数值相关性
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241881
A. Chini, V. Di Lecce, F. Soci, D. Bisi, A. Stocco, M. Meneghini, G. Meneghesso, E. Zanoni, A. Gasparotto
{"title":"Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs","authors":"A. Chini, V. Di Lecce, F. Soci, D. Bisi, A. Stocco, M. Meneghini, G. Meneghesso, E. Zanoni, A. Gasparotto","doi":"10.1109/IRPS.2012.6241881","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241881","url":null,"abstract":"In this work, for the first time, the dependence of the GaN HEMTs current collapse from the profile of the Fe-doped semi-insulating GaN buffers has been demonstrated both experimentally and by means of numerical simulations based on the SIMS measured profile of the GaN buffer Fe-doping concentration.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126883321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Polarity dependence of the conduction mechanism in inter-level low-k dielectrics 低k介电体间传导机制的极性依赖性
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241879
M. Lin, J. Liang, C. J. Wang, A. Juan, K. Su
{"title":"Polarity dependence of the conduction mechanism in inter-level low-k dielectrics","authors":"M. Lin, J. Liang, C. J. Wang, A. Juan, K. Su","doi":"10.1109/IRPS.2012.6241879","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241879","url":null,"abstract":"Leakage currents of inter level carbon-doped silicon oxide low-k dielectric in copper interconnect structure are investigated over the electric field range of zero to the breakdown field at different temperatures. A remarkable bias polarity dependence of conduction current and breakdown voltage is observed in such structure. Different conduction mechanisms are found in different electric field ranges. Ohmic conduction of electron hopping dominates at the low electric field. Poole-Frenkel emission and Fowler-Nordheim tunneling occur at high field on the different bias conditions respectively. The activation energy or energy barrier belong to each conduction mechanism was estimated. These conduction phenomena were explained by the asymmetry energy band diagram and surface defects. The bias polarity dependence of breakdown voltage indicates the breakdown mechanism of inter level low-k dielectric is attribute to carrier current but not electric field as ascribed by E-model.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"273 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124422176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Comparison of applications of laser probing, laser-induced circuit perturbation and photon emission for failure analysis and yield enhancement 激光探测、激光诱导电路微扰和光子发射在失效分析和良率提高中的应用比较
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241782
S. Kasapi, R. Ng, J. Liao, W. Lo, B. Cory, H. Marks
{"title":"Comparison of applications of laser probing, laser-induced circuit perturbation and photon emission for failure analysis and yield enhancement","authors":"S. Kasapi, R. Ng, J. Liao, W. Lo, B. Cory, H. Marks","doi":"10.1109/IRPS.2012.6241782","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241782","url":null,"abstract":"The transparency of the silicon substrate in CMOS circuits to near infra-red light has enabled a rich variety of optical techniques for observing and modifying circuit behavior. The main classes of optical analysis techniques are photon emission, laser-induced circuit perturbation, and laser probing. Recent innovations in laser probing present significant new opportunities for failure analysis and yield enhancement. This paper presents several case studies with particular emphasis on how the new laser probing techniques complement and extend the established approaches.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130351946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A review of real-time soft-error rate measurements in electronic circuits 电子电路中实时软误差率测量的研究进展
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241843
J. Autran, D. Munteanu, S. Serre, S. Sauze
{"title":"A review of real-time soft-error rate measurements in electronic circuits","authors":"J. Autran, D. Munteanu, S. Serre, S. Sauze","doi":"10.1109/IRPS.2012.6241843","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241843","url":null,"abstract":"The real-time (or life testing) soft-error rate (SER) measurement is an experimental reliability technique to determine the SER from the monitoring of a population of devices subjected to the natural radiation environment and operating under nominal conditions. This review presentation gives a survey over different real-time SER experiments conducted in altitude and/or underground over the past decade. We discuss the specific advantages and limitations of this approach as well as its comparison with accelerated tests using intense particle beams or sources.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128620916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Exponential-edge transmission line pulsing for snap-back device characterization 用于回跳器件特性的指数边缘传输线脉冲
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241820
N. Thomson, N. Jack, E. Rosenbaum
{"title":"Exponential-edge transmission line pulsing for snap-back device characterization","authors":"N. Thomson, N. Jack, E. Rosenbaum","doi":"10.1109/IRPS.2012.6241820","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241820","url":null,"abstract":"A new ESD testing system, the exponential-edge transmission line pulse system (EETLP), is presented. EETLP generates 100ns square pulses with a variable, exponentially decaying falling edge. When applied to an ESD protection device, the pulse shape allows for capture of both the transient and quasi-steady-state responses, in the context of a single measurement. EETLP provides unprecedented insight into the turn-off dynamics of snapback-type devices. Device measurement data are presented to demonstrate the capabilities of EETLP.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131644690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Mechanical strength and reliability of a novel thin monocrystalline silicon solar cell 一种新型单晶硅薄太阳能电池的机械强度和可靠性
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241827
Dewei Xu, P. Ho, R. Rao, L. Mathew, S. Smith, S. Saha, D. Sarkar, C. Vass, D. Jawarani
{"title":"Mechanical strength and reliability of a novel thin monocrystalline silicon solar cell","authors":"Dewei Xu, P. Ho, R. Rao, L. Mathew, S. Smith, S. Saha, D. Sarkar, C. Vass, D. Jawarani","doi":"10.1109/IRPS.2012.6241827","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241827","url":null,"abstract":"Thin crystalline silicon solar cells, on the order of a few to tens of μm thick, are of interest due to significant material cost reduction and potentially high conversion efficiency. These thin silicon films impose stringent mechanical strength and handling requirements during wafer transfer, cell processing and module integration. Quantitative mechanical and fracture analyses to address reliability issues become necessary. Based on a bi-material foil composed of thin monocrystalline silicon and a supporting substrate fabricated from a novel SOM® (Semiconductor on Metal) kerf-less exfoliation process, closed-form mechanical analyses are introduced and developed to evaluate their strength and fracture behaviors. These analyses include the thermal stress field in the device silicon layer and supporting substrate, the fracture behavior and effects of pyramid structures from surface texturing and the energy release rate at the silicon-substrate interface. It is shown that the introduction of the intrinsic compressive residual strain in the SOM® substrate expands the processing temperature spectrum. The developed analysis and methodology can be readily extended to other thin film solar cell structures with various configurations of device layers and supporting substrates.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133379570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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