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2012 IEEE International Reliability Physics Symposium (IRPS)最新文献

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Total ionizing dose effects on ultra thin buried oxide floating body memories 总电离剂量对超薄埋藏氧化物漂浮体记忆的影响
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241920
N. Mahatme, peixiong zhao, R. Reed, B. Bhuva, A. Griffoni, E. Simoen, M. Aoulaiche, D. Linten, M. Jurczak, G. Groeseneken
{"title":"Total ionizing dose effects on ultra thin buried oxide floating body memories","authors":"N. Mahatme, peixiong zhao, R. Reed, B. Bhuva, A. Griffoni, E. Simoen, M. Aoulaiche, D. Linten, M. Jurczak, G. Groeseneken","doi":"10.1109/IRPS.2012.6241920","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241920","url":null,"abstract":"The total-ionizing-dose response of 1-transistor floating body memory cells is investigated. Factors affecting the robustness of these novel devices for high reliability applications in space environments are investigated. Memory failure is shown to result from radiation-induced threshold voltage shifts and increased leakage. Results from this work can also be used to uncover the effects of process and transistor level degradation on memory performance.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122331124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A study of junction photocurrent changes caused by defective gate oxide 栅氧化缺陷引起结光电流变化的研究
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241786
H. Lin
{"title":"A study of junction photocurrent changes caused by defective gate oxide","authors":"H. Lin","doi":"10.1109/IRPS.2012.6241786","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241786","url":null,"abstract":"It has been widely revealed that the Atomic Force Microscope (AFM) laser beam may induce photoperturbation which can significantly deteriorate the characterization accuracy of AFM-based tools. This paper gives direct evidence that the optical excitation process may yield a temporary source of minority carriers, and that the inversion layer can be formed beneath the oxide layer of the NMOS transistor. By taking advantage of this non-negligible photoelectric effect, a novel approach that is likely to be used to evaluate gate oxide quality or gate oxide reliability was developed. In this study, it was observed that defective gate oxide can cause junction photocurrent changes, or the junction photocurrent can be correlated to gate oxide quality.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115224918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved reliability of Al2O3/InGaAs/InP MOS structures through in-situ forming gas annealing 通过原位成形气体退火，提高了Al2O3/InGaAs/InP MOS结构的可靠性
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241923
R. O'Connor, K. Cherkaoui, R. Nagle, M. Schmidt, I. Povey, M. Pemble, P. Hurley
{"title":"Improved reliability of Al2O3/InGaAs/InP MOS structures through in-situ forming gas annealing","authors":"R. O'Connor, K. Cherkaoui, R. Nagle, M. Schmidt, I. Povey, M. Pemble, P. Hurley","doi":"10.1109/IRPS.2012.6241923","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241923","url":null,"abstract":"In this paper we report on the leakage currents and time dependent dielectric breakdown characteristics of Al<sub>2</sub>O<sub>3</sub>/InGaAs/InP MOS structures where the Al<sub>2</sub>O<sub>3</sub> dielectric is formed by atomic layer deposition (ALD) and the structures were annealed in-situ in the ALD reactor after Al<sub>2</sub>O<sub>3</sub> growth. The effect of an in-situ forming gas (H<sub>2</sub>/N<sub>2</sub>) anneals and an in-situ H<sub>2</sub>/Ar plasma anneals was examined. The in-situ forming gas anneal was found to improve the time dependent dielectric breakdown characteristics without significant degradation of the gate stack capacitance. We also show that the H<sub>2</sub>/Ar plasma treatment results in a marked reliability improvement but also causes a significant degradation of the gate stack capacitance which is confirmed by TEM to be a result on an increased physical thickness of the gate dielectric.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123630176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A review of real-time soft-error rate measurements in electronic circuits 电子电路中实时软误差率测量的研究进展
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241843
J. Autran, D. Munteanu, S. Serre, S. Sauze
{"title":"A review of real-time soft-error rate measurements in electronic circuits","authors":"J. Autran, D. Munteanu, S. Serre, S. Sauze","doi":"10.1109/IRPS.2012.6241843","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241843","url":null,"abstract":"The real-time (or life testing) soft-error rate (SER) measurement is an experimental reliability technique to determine the SER from the monitoring of a population of devices subjected to the natural radiation environment and operating under nominal conditions. This review presentation gives a survey over different real-time SER experiments conducted in altitude and/or underground over the past decade. We discuss the specific advantages and limitations of this approach as well as its comparison with accelerated tests using intense particle beams or sources.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128620916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Comparison of applications of laser probing, laser-induced circuit perturbation and photon emission for failure analysis and yield enhancement 激光探测、激光诱导电路微扰和光子发射在失效分析和良率提高中的应用比较
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241782
S. Kasapi, R. Ng, J. Liao, W. Lo, B. Cory, H. Marks
{"title":"Comparison of applications of laser probing, laser-induced circuit perturbation and photon emission for failure analysis and yield enhancement","authors":"S. Kasapi, R. Ng, J. Liao, W. Lo, B. Cory, H. Marks","doi":"10.1109/IRPS.2012.6241782","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241782","url":null,"abstract":"The transparency of the silicon substrate in CMOS circuits to near infra-red light has enabled a rich variety of optical techniques for observing and modifying circuit behavior. The main classes of optical analysis techniques are photon emission, laser-induced circuit perturbation, and laser probing. Recent innovations in laser probing present significant new opportunities for failure analysis and yield enhancement. This paper presents several case studies with particular emphasis on how the new laser probing techniques complement and extend the established approaches.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130351946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 氮化镓hemt中电流坍塌与铁掺杂谱的实验与数值相关性
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241881
A. Chini, V. Di Lecce, F. Soci, D. Bisi, A. Stocco, M. Meneghini, G. Meneghesso, E. Zanoni, A. Gasparotto
{"title":"Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs","authors":"A. Chini, V. Di Lecce, F. Soci, D. Bisi, A. Stocco, M. Meneghini, G. Meneghesso, E. Zanoni, A. Gasparotto","doi":"10.1109/IRPS.2012.6241881","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241881","url":null,"abstract":"In this work, for the first time, the dependence of the GaN HEMTs current collapse from the profile of the Fe-doped semi-insulating GaN buffers has been demonstrated both experimentally and by means of numerical simulations based on the SIMS measured profile of the GaN buffer Fe-doping concentration.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126883321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Reliability evaluations of ECP tools and chemistries ECP工具和化学品的可靠性评估
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241897
G. Hall, D. Allman, G. Piatt, P. Hulse
{"title":"Reliability evaluations of ECP tools and chemistries","authors":"G. Hall, D. Allman, G. Piatt, P. Hulse","doi":"10.1109/IRPS.2012.6241897","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241897","url":null,"abstract":"Microstructural considerations were studied in a tool qualification for ECP in a dual-damascene 110nm Cu/low-k BEOL process. Wafer Level tests (HTS, Isothermal EM) using standard SM/SIV and EM test structures were used to compare two ECP tools and chemistries, and sensitivities were further investigated with materials analysis consisting of Elemental (TOF-SIMS), EBSD (texture analysis) and grain-size analysis. It is found that the differences in the relative grain-size, and impurity content both contributed to the improvement of the TTF for EM and SM/SIV. Interpretation of the SIV data used a proportional hazards model, incorporating basic elements of stochastic geometry to find a scaling form which can be used to extract the relative change in Cu mobility.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125863102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Experimental characterization of process corners effect on SRAM alpha and neutron Soft Error Rates 工艺角对SRAM α和中子软误差率影响的实验表征
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241813
G. Gasiot, M. Glorieux, S. Uznanski, S. Clerc, P. Roche
{"title":"Experimental characterization of process corners effect on SRAM alpha and neutron Soft Error Rates","authors":"G. Gasiot, M. Glorieux, S. Uznanski, S. Clerc, P. Roche","doi":"10.1109/IRPS.2012.6241813","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241813","url":null,"abstract":"This paper shows alpha and neutron experimental Soft Error Rate characterization of a SRAM test vehicle processed with different process corners in order to emulate the variability encountered in volume production. It allows assessing large variability effects with few samples that are compatible with accelerated SER testing. This allows investigating the effect of variability in mass-production on soft error rate of deca-nanometric technologies.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127663319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Spectroscopic charge pumping in the presence of high densities of bulk dielectric traps 高密度体介电阱存在时的光谱电荷泵送
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241931
J. Ryan, R. Southwick, J. Campbell, K. Cheung, C. Young, J. Suehle
{"title":"Spectroscopic charge pumping in the presence of high densities of bulk dielectric traps","authors":"J. Ryan, R. Southwick, J. Campbell, K. Cheung, C. Young, J. Suehle","doi":"10.1109/IRPS.2012.6241931","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241931","url":null,"abstract":"We demonstrate the extension of the recently developed spectroscopic charge-pumping (CP) technique to high-k gate stacks. To deal with the high density of bulk traps, we develop an experimentally based methodology to remove the bulk trap contribution from the measured CP data. We demonstrate the capability of the spectroscopic CP technique to measure band edge states and show that the traditional U-shaped continuum of band edge states is not intrinsic to Si/SiO2 interfaces.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126941165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Scaling effect and circuit type dependence of neutron induced single event transient 中子诱导单事件瞬态的标度效应和电路类型依赖性
2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241812
Hideyuki Nakamura, Taiki Uemura, Kan Takeuchi, Toshikazu Fukuda, Shigetaka Kumashiro, Tohru Mogami
{"title":"Scaling effect and circuit type dependence of neutron induced single event transient","authors":"Hideyuki Nakamura, Taiki Uemura, Kan Takeuchi, Toshikazu Fukuda, Shigetaka Kumashiro, Tohru Mogami","doi":"10.1109/IRPS.2012.6241812","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241812","url":null,"abstract":"Neutron induced single event transient (SET) has been measured on NAND and inverter (INV) chain with changing fan-out, drive strength, size of drain diffusion area, temperature and VDD on 40nm and 90nm bulk CMOS technology. As the pulse width distribution varies with the length of SET target chain as well, it is important to use the chain length similar with the actual logic circuits. Using tens of stages of target chain, pulses wider than 150ps have been rarely observed. The results of the measurement show that the SER of SET changes depending on the cell type and fan-out. SER of SET in combinational logic circuits decreases by half from 90nm to 40nm for the same gate count and the same clock frequency.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114280612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
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