2012 IEEE International Reliability Physics Symposium (IRPS)最新文献_第4页

Pulsed Laser Assisted Chemical Etch for analytic surface preparation 脉冲激光辅助化学蚀刻分析表面制备

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241787

R. Chivas, S. Silverman, N. Dandekar

引用次数: 2

Fundamental failure mechanisms limiting maximum voltage operation in AlGaN/GaN HEMTs 限制AlGaN/GaN hemt最大电压运行的基本失效机制

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241816

M. D. Hodge, R. Vetury, J. Shealy

引用次数: 13

Aging statistics based on trapping/detrapping: Silicon evidence, modeling and long-term prediction 基于捕获/去捕获的老化统计:硅证据、建模和长期预测

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241795

J. Velamala, K. Sutaria, T. Sato, Yu Cao

{"title":"Aging statistics based on trapping/detrapping: Silicon evidence, modeling and long-term prediction","authors":"J. Velamala, K. Sutaria, T. Sato, Yu Cao","doi":"10.1109/IRPS.2012.6241795","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241795","url":null,"abstract":"The aging process due to Negative Bias Temperature Instability (NBTI) exhibits a significant amount of variability and thus poses a dramatic challenge for long-term reliability prediction from short-term stress measurement. To develop a robust prediction method in this circumstance, this work first collects statistical device data from a 65nm test chip with a resolution of 0.2mV in threshold voltage (Vth) measurement. By comparing model prediction from short-term stress data (<;20k second) with direct long-term measurement (up to 200k second), we conclude that (1) the degradation follows a logarithmic dependence on time, as opposed to the conventional power law; (2) the Reaction-Diffusion (R-D) based tn model significantly overestimates the aging rate and exaggerates its variance; (3) the log(t) model, derived from the trapping/de-trapping (T-D) mechanism, correctly captures the aging variability due to the randomness in number of available traps, and accurately predicts the mean and the variance of Vth shift. These results guide the development of a new aging model for robust long-term lifetime prediction.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132901762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 43

The impact of 45 to 28nm node-scaling on the electromigration of flip-chip bumps 45 ~ 28nm节点缩放对倒装芯片凸点电迁移的影响

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241793

C. Hau-Riege, Y. Yau, L. Zhao

引用次数: 1

Soft Defect Localization (SDL) applied on analog and mixed-mode ICs failure analysis 软缺陷定位(SDL)在模拟和混合模式集成电路失效分析中的应用

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241907

Jinglong Li, Chunlei Wu

引用次数: 7

Min-log approach to modeling dielectric breakdown data 电介质击穿数据建模的最小对数方法

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241911

E. Yashchin, Baozhen Li, J. Stathis, E. Wu

{"title":"Min-log approach to modeling dielectric breakdown data","authors":"E. Yashchin, Baozhen Li, J. Stathis, E. Wu","doi":"10.1109/IRPS.2012.6241911","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241911","url":null,"abstract":"The process of dielectric breakdown in thin films has been studied extensively in the literature. Typically, these processes are modeled in terms of stochastic quantities related to a Weibull distribution. In many cases the direct Weibull approach is not capable of explaining the observed times to dielectric breakdown (TDDB), leading to the necessity to introduce more complex models. This, in turn, leads to considerable complications in the process of modeling and analyzing this phenomenon. In this article we present an approach to analysis of TDDB data based on the assumption that a sample can be viewed as a collection of competing cells, where the same stochastic process of degradation is taking place in the individual cells. Every cell, therefore, has its individual time to failure, and the cell having the shortest time is the one that actually causes the failure. In many cases, this is the only lifetime that is actually observable, as the sample and the ongoing processes in the cells could be affected by the dielectric discharge in one of them. We consider the situation where times of breakdown of individual cells can be modeled by a lognormal distribution and develop an approach based on the finite-sample distribution of minimum. This model leads to a relatively simple explanation of the TDDB data, including both low and high percentiles. We develop procedures for inference based on complete or right-censored TDDB data and illustrate its application for data obtained in the course of stress-based experiments.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"79 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128103836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Alpha-induced soft errors in Floating Gate flash memories 浮门闪存中α诱发的软错误

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241811

M. Bagatin, S. Gerardin, A. Paccagnella, V. Ferlet-Cavrois

引用次数: 10

Polarity dependence of the conduction mechanism in inter-level low-k dielectrics 低k介电体间传导机制的极性依赖性

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241879

M. Lin, J. Liang, C. J. Wang, A. Juan, K. Su

引用次数: 2

Exponential-edge transmission line pulsing for snap-back device characterization 用于回跳器件特性的指数边缘传输线脉冲

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241820

N. Thomson, N. Jack, E. Rosenbaum

引用次数: 9

Mechanical strength and reliability of a novel thin monocrystalline silicon solar cell 一种新型单晶硅薄太阳能电池的机械强度和可靠性

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241827

Dewei Xu, P. Ho, R. Rao, L. Mathew, S. Smith, S. Saha, D. Sarkar, C. Vass, D. Jawarani

{"title":"Mechanical strength and reliability of a novel thin monocrystalline silicon solar cell","authors":"Dewei Xu, P. Ho, R. Rao, L. Mathew, S. Smith, S. Saha, D. Sarkar, C. Vass, D. Jawarani","doi":"10.1109/IRPS.2012.6241827","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241827","url":null,"abstract":"Thin crystalline silicon solar cells, on the order of a few to tens of μm thick, are of interest due to significant material cost reduction and potentially high conversion efficiency. These thin silicon films impose stringent mechanical strength and handling requirements during wafer transfer, cell processing and module integration. Quantitative mechanical and fracture analyses to address reliability issues become necessary. Based on a bi-material foil composed of thin monocrystalline silicon and a supporting substrate fabricated from a novel SOM® (Semiconductor on Metal) kerf-less exfoliation process, closed-form mechanical analyses are introduced and developed to evaluate their strength and fracture behaviors. These analyses include the thermal stress field in the device silicon layer and supporting substrate, the fracture behavior and effects of pyramid structures from surface texturing and the energy release rate at the silicon-substrate interface. It is shown that the introduction of the intrinsic compressive residual strain in the SOM® substrate expands the processing temperature spectrum. The developed analysis and methodology can be readily extended to other thin film solar cell structures with various configurations of device layers and supporting substrates.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133379570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7