2012 IEEE International Reliability Physics Symposium (IRPS)最新文献_第4页

Pulsed Laser Assisted Chemical Etch for analytic surface preparation 脉冲激光辅助化学蚀刻分析表面制备

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241787

R. Chivas, S. Silverman, N. Dandekar

引用次数: 2

Fundamental failure mechanisms limiting maximum voltage operation in AlGaN/GaN HEMTs 限制AlGaN/GaN hemt最大电压运行的基本失效机制

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241816

M. D. Hodge, R. Vetury, J. Shealy

引用次数: 13

Aging statistics based on trapping/detrapping: Silicon evidence, modeling and long-term prediction 基于捕获/去捕获的老化统计:硅证据、建模和长期预测

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241795

J. Velamala, K. Sutaria, T. Sato, Yu Cao

{"title":"Aging statistics based on trapping/detrapping: Silicon evidence, modeling and long-term prediction","authors":"J. Velamala, K. Sutaria, T. Sato, Yu Cao","doi":"10.1109/IRPS.2012.6241795","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241795","url":null,"abstract":"The aging process due to Negative Bias Temperature Instability (NBTI) exhibits a significant amount of variability and thus poses a dramatic challenge for long-term reliability prediction from short-term stress measurement. To develop a robust prediction method in this circumstance, this work first collects statistical device data from a 65nm test chip with a resolution of 0.2mV in threshold voltage (Vth) measurement. By comparing model prediction from short-term stress data (<;20k second) with direct long-term measurement (up to 200k second), we conclude that (1) the degradation follows a logarithmic dependence on time, as opposed to the conventional power law; (2) the Reaction-Diffusion (R-D) based tn model significantly overestimates the aging rate and exaggerates its variance; (3) the log(t) model, derived from the trapping/de-trapping (T-D) mechanism, correctly captures the aging variability due to the randomness in number of available traps, and accurately predicts the mean and the variance of Vth shift. These results guide the development of a new aging model for robust long-term lifetime prediction.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132901762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 43

The impact of 45 to 28nm node-scaling on the electromigration of flip-chip bumps 45 ~ 28nm节点缩放对倒装芯片凸点电迁移的影响

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241793

C. Hau-Riege, Y. Yau, L. Zhao

引用次数: 1

Soft Defect Localization (SDL) applied on analog and mixed-mode ICs failure analysis 软缺陷定位(SDL)在模拟和混合模式集成电路失效分析中的应用

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241907

Jinglong Li, Chunlei Wu

引用次数: 7

Min-log approach to modeling dielectric breakdown data 电介质击穿数据建模的最小对数方法

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241911

E. Yashchin, Baozhen Li, J. Stathis, E. Wu

{"title":"Min-log approach to modeling dielectric breakdown data","authors":"E. Yashchin, Baozhen Li, J. Stathis, E. Wu","doi":"10.1109/IRPS.2012.6241911","DOIUrl":"https://doi.org/10.1109/IRPS.2012.6241911","url":null,"abstract":"The process of dielectric breakdown in thin films has been studied extensively in the literature. Typically, these processes are modeled in terms of stochastic quantities related to a Weibull distribution. In many cases the direct Weibull approach is not capable of explaining the observed times to dielectric breakdown (TDDB), leading to the necessity to introduce more complex models. This, in turn, leads to considerable complications in the process of modeling and analyzing this phenomenon. In this article we present an approach to analysis of TDDB data based on the assumption that a sample can be viewed as a collection of competing cells, where the same stochastic process of degradation is taking place in the individual cells. Every cell, therefore, has its individual time to failure, and the cell having the shortest time is the one that actually causes the failure. In many cases, this is the only lifetime that is actually observable, as the sample and the ongoing processes in the cells could be affected by the dielectric discharge in one of them. We consider the situation where times of breakdown of individual cells can be modeled by a lognormal distribution and develop an approach based on the finite-sample distribution of minimum. This model leads to a relatively simple explanation of the TDDB data, including both low and high percentiles. We develop procedures for inference based on complete or right-censored TDDB data and illustrate its application for data obtained in the course of stress-based experiments.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"79 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128103836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Alpha-induced soft errors in Floating Gate flash memories 浮门闪存中α诱发的软错误

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241811

M. Bagatin, S. Gerardin, A. Paccagnella, V. Ferlet-Cavrois

引用次数: 10

A study of junction photocurrent changes caused by defective gate oxide 栅氧化缺陷引起结光电流变化的研究

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241786

H. Lin

引用次数: 0

Scaling effect and circuit type dependence of neutron induced single event transient 中子诱导单事件瞬态的标度效应和电路类型依赖性

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241812

Hideyuki Nakamura, Taiki Uemura, Kan Takeuchi, Toshikazu Fukuda, Shigetaka Kumashiro, Tohru Mogami

引用次数: 11

Improved reliability of Al2O3/InGaAs/InP MOS structures through in-situ forming gas annealing 通过原位成形气体退火，提高了Al2O3/InGaAs/InP MOS结构的可靠性

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI: 10.1109/IRPS.2012.6241923

R. O'Connor, K. Cherkaoui, R. Nagle, M. Schmidt, I. Povey, M. Pemble, P. Hurley

引用次数: 2