浮门闪存中α诱发的软错误

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241811

M. Bagatin, S. Gerardin, A. Paccagnella, V. Ferlet-Cavrois

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引用次数: 10

摘要

我们研究了具有NAND结构的最先进的多级单元(MLC)和单级单元(SLC) NAND浮动门(FG)闪存对α粒子的灵敏度。我们表明，从50 nm的特征尺寸开始，MLC闪存对α粒子敏感，而SLC器件在34 nm的特征尺寸下没有表现出任何敏感性。我们计算了α诱导的软错误率，讨论了与重离子相比的技术趋势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Alpha-induced soft errors in Floating Gate flash memories

We study the sensitivity to alpha particles of state-of-the-art Multi-Level Cell (MLC) and Single-Level Cell (SLC) NAND Floating Gate (FG) flash memories with NAND architecture. We show that starting from a feature size of 50 nm, MLC flash memories are sensitive to alpha particles, whereas SLC devices do not show any sensitivity down to a feature size of 34 nm. We calculate the alpha-induced soft error rates on the field, discuss technology trends in comparison to heavy-ions.

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2012 IEEE International Reliability Physics Symposium (IRPS)

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