Pulsed Laser Assisted Chemical Etch for analytic surface preparation

R. Chivas, S. Silverman, N. Dandekar
{"title":"Pulsed Laser Assisted Chemical Etch for analytic surface preparation","authors":"R. Chivas, S. Silverman, N. Dandekar","doi":"10.1109/IRPS.2012.6241787","DOIUrl":null,"url":null,"abstract":"Pulsed Laser Assisted Chemical Etching (PLACE) is an advanced method of surface preparation for analytic investigations such as: Focused Ion Beam (FIB) circuit edit, Failure Analysis chemical processes (poly-Si etch), Backside SIMS and Optical techniques such as Photoemission Microscopy. PLACE can achieve ultra-high purity and fine dimensional control since it is a dry process relying on pyrolytic vapor phase reactions initiated, and constrained, by a pulsed laser.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241787","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Pulsed Laser Assisted Chemical Etching (PLACE) is an advanced method of surface preparation for analytic investigations such as: Focused Ion Beam (FIB) circuit edit, Failure Analysis chemical processes (poly-Si etch), Backside SIMS and Optical techniques such as Photoemission Microscopy. PLACE can achieve ultra-high purity and fine dimensional control since it is a dry process relying on pyrolytic vapor phase reactions initiated, and constrained, by a pulsed laser.
脉冲激光辅助化学蚀刻分析表面制备
脉冲激光辅助化学蚀刻(PLACE)是一种先进的表面制备方法,用于分析研究,如:聚焦离子束(FIB)电路编辑,失效分析化学过程(多晶硅蚀刻),背面SIMS和光学技术,如光电显微镜。PLACE可以实现超高纯度和精细的尺寸控制,因为它是一个干燥的过程,依赖于由脉冲激光引发和约束的热解气相反应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信