氮化镓hemt中电流坍塌与铁掺杂谱的实验与数值相关性

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241881

A. Chini, V. Di Lecce, F. Soci, D. Bisi, A. Stocco, M. Meneghini, G. Meneghesso, E. Zanoni, A. Gasparotto

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引用次数: 10

摘要

在这项工作中，首次通过实验和基于SIMS测量的氮化镓缓冲铁掺杂浓度分布的数值模拟，证明了氮化镓hemt电流坍塌与掺铁半绝缘氮化镓缓冲层的关系。

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Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs

In this work, for the first time, the dependence of the GaN HEMTs current collapse from the profile of the Fe-doped semi-insulating GaN buffers has been demonstrated both experimentally and by means of numerical simulations based on the SIMS measured profile of the GaN buffer Fe-doping concentration.

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2012 IEEE International Reliability Physics Symposium (IRPS)

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