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1988., IEEE MTT-S International Microwave Symposium Digest最新文献

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Modeling of coupling by probes in dual mode cavities 双模腔中探针耦合的建模
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22087
K. Zaki, C. Chen, A. Atia
{"title":"Modeling of coupling by probes in dual mode cavities","authors":"K. Zaki, C. Chen, A. Atia","doi":"10.1109/MWSYM.1988.22087","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22087","url":null,"abstract":"An accurate model of coaxial probes used as input and output ports in dual-mode cavities (either air-filled or dielectric-loaded) is presented. The model precisely predicts such empirically observed phenomena as limited out-of-band isolation, generation of extra transmission zeros, and asymmetric responses. The model parameters can be determined from simple measured data. Experimental verification of the model is carried out and the measurements also provide useful data for the design and prediction of canonical data mode filters responses.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132924210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
The stackFET: an improved implementation of the dual gate FET 堆栈场效应管:双栅场效应管的改进实现
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22180
W.W. Hoppin, S. Cripps, J.R. Anderson
{"title":"The stackFET: an improved implementation of the dual gate FET","authors":"W.W. Hoppin, S. Cripps, J.R. Anderson","doi":"10.1109/MWSYM.1988.22180","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22180","url":null,"abstract":"A method of directly coupling two GaAs FET devices in series is described. The resulting structure, called a stackFET, is essentially an optimum implementation of a dual-gate GaAs FET in which the gain of the two FETs is combined in a series biased, DC-coupled arrangement. The RF interconnection of the stackFET is such that each individual FET acts as if it is operating in RF common-source mode, rather than a common-source/common-gate cascode combination. This results in much higher gain and stability, and very well-behaved matching and automatic gain control characteristics. A stackFET-based balanced amplifier module giving 22.5 dB of gain over the 2-8-GHz band is discussed.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133227649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Single-pulse RF damage of GaAs FET amplifiers GaAs FET放大器的单脉冲射频损伤
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22033
J. McAdoo, W. M. Bollen, R. Garver
{"title":"Single-pulse RF damage of GaAs FET amplifiers","authors":"J. McAdoo, W. M. Bollen, R. Garver","doi":"10.1109/MWSYM.1988.22033","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22033","url":null,"abstract":"Several GaAs MMIC (microwave monolithic integrated circuit) amplifiers have been tested for damage from single pulses of microwave power applied to the circuit input terminals. Damage characteristics are described and modeled.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"132 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133557418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A low-noise Ku-band AlGaAs/GaAs HBT oscillator 一种低噪声ku波段AlGaAs/GaAs HBT振荡器
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22123
N. Hayama, S. R. Lesage, M. Madihian, K. Honjo
{"title":"A low-noise Ku-band AlGaAs/GaAs HBT oscillator","authors":"N. Hayama, S. R. Lesage, M. Madihian, K. Honjo","doi":"10.1109/MWSYM.1988.22123","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22123","url":null,"abstract":"Design considerations, fabrication and performance results are described for a low-phase-noise Ku-band oscillator implemented using a fully self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT). The transistor has a measured collector-current 1/f noise power density of 10/sup -19/A/sup 2//Hz at f=400 Hz for a collector current of 1.2 mA. The free-running oscillator developed represents an output power of 6 dBm at 15.5 GHz, with a single-sideband (SSB) FM noise of -65 dBc/Hz at 10 kHz off-carrier. The noise level is 24 dB lower than that for a GaAs FET oscillator, and 2 dB lower than that for a silicon voltage-controlled oscillator.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122953140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Characteristics of coplanar waveguides with metal coating on multilayer substrate: application to broadband LiNbO/sub 3/:Ti traveling wave light modulators/switch 多层衬底金属涂层共面波导的特性:在宽带LiNbO/ sub3 /:Ti行波光调制器/开关中的应用
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22218
D. Bourreau, P. Guillon
{"title":"Characteristics of coplanar waveguides with metal coating on multilayer substrate: application to broadband LiNbO/sub 3/:Ti traveling wave light modulators/switch","authors":"D. Bourreau, P. Guillon","doi":"10.1109/MWSYM.1988.22218","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22218","url":null,"abstract":"A design is proposed for nonsymmetric electrodes for a broadband electrooptic modulator with low drive voltage. Traveling-wave electrodes, laterally shifted to reverse the direction of the applied electric field, are used to obtain constant phase variation. The finite-element method is used to compute the electrodes' characteristics taking into account both electrodes and buffers thickness. Numerical results are given for LiNbO/sub 3/:Ti substrate material at 1.52- mu m wavelength.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121950048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microwave-induced arcing in filters 滤波器中的微波感应电弧
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22156
S. Kaplan, A. Cuneo, R. Garver
{"title":"Microwave-induced arcing in filters","authors":"S. Kaplan, A. Cuneo, R. Garver","doi":"10.1109/MWSYM.1988.22156","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22156","url":null,"abstract":"This study is concerned with identifying worst-case results for microwave energy coupled into electronic systems. A method of observing specific arc locations in parallel-coupled stripline filters using a conventional oscilloscope camera is described. Experiments were performed with a network analyzer and with two 1-MW pulsed sources at S-band and X-band frequencies, respectively. The results were used to develop models of the parallel-coupled-stripline filters. These models are in good agreement with the low-power S-parameter data from network analyzer measurements made on the filters. High-power models were constructed using zero impedance paths to represent arcs. These models extend limited high-power data, giving the wideband responses of the filters under conditions of breakdown.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122007927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel approach for the large signal analysis and optimisation of microwave frequency doublers 微波倍频器大信号分析与优化的新方法
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22227
S. El-Rabaie, J. Stewart, V. Fusco, J. J. McKeown
{"title":"A novel approach for the large signal analysis and optimisation of microwave frequency doublers","authors":"S. El-Rabaie, J. Stewart, V. Fusco, J. J. McKeown","doi":"10.1109/MWSYM.1988.22227","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22227","url":null,"abstract":"An approach is described for the large-signal analysis and optimization of microwave frequency doublers. A large-signal lumped-element model is used for an NE 71000 chip MESFET with a two-level harmonic balance program to analyze and optimize a target ideal doubler. A practical circuit is built to synthesize the ideal doubler requirement. To verify the method experimentally, a single-ended doubler operating from 7-14-GHz has been used as a demonstrator. Agreement between experiment and theory is excellent. The method described is transferable to multipliers of higher order, and to higher frequencies.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129870560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
The analysis of magnetostatic waves in a waveguide using the integral equation method 用积分方程法分析波导中的静磁波
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22144
M. Radmanesh, C. Chu, G. Haddad
{"title":"The analysis of magnetostatic waves in a waveguide using the integral equation method","authors":"M. Radmanesh, C. Chu, G. Haddad","doi":"10.1109/MWSYM.1988.22144","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22144","url":null,"abstract":"Magnetostatic volume-wave propagation in a finite-width ferrite slab placed inside and along a rectangular waveguide is investigated theoretically and numerically. Using the integral equation method, the general solution to the problem of wave propagation is derived. The thin-slab approximation makes the derived solution more tractable and provides the dispersion relations in terms of an infinite determinant. The results indicated that in order to obtain high values of group time delay over a large bandwidth, thin, narrow slabs placed in the center of the guide must be used. To maximize the device bandwidth, thin slabs placed at the top or bottom of the guide are most appropriate.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130003858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The use of parametric modeling in microwave circuit design 参数化建模在微波电路设计中的应用
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22228
M. Eron, D. Rhodes
{"title":"The use of parametric modeling in microwave circuit design","authors":"M. Eron, D. Rhodes","doi":"10.1109/MWSYM.1988.22228","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22228","url":null,"abstract":"A description is given of the use of parametric, frequency-dependent models for more accurate and realistic active and passive computer-aided design (CAD) model development. Two examples are presented to demonstrate the power of this method for the design of analog circuits. The first example concerns a spiral inductor model. The second example involves a voltage-controlled wideband attenuator.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129278236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaAs HEMT lossy match amplifiers GaAs HEMT有损匹配放大器
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22047
Y. Ito, A. Takeda
{"title":"GaAs HEMT lossy match amplifiers","authors":"Y. Ito, A. Takeda","doi":"10.1109/MWSYM.1988.22047","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22047","url":null,"abstract":"A design approach is described for hybrid lossy match amplifiers in the 1-13-GHz and 1-20-GHz bands, using 0.3- mu m-gate-length GaAs HEMTs (high-electron-mobility transistors). Two types of these two-stage lossy match amplifiers have been realized. One amplifier, using 0.3*280 mu m GaAs HEMTs, exhibits 14.0+or-0.4 dB gain, better than 10 dB return loss, and less than 7.8 dB noise figure over the 1-13-GHz band. The other amplifier, using 0.3*200 mu m GaAs HEMTs, shows 9.5+or-0.4 dB gain, better than 10 dB return loss, and less than 7.5 dB noise figure across the 1-20-GHz band.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129604782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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