{"title":"堆栈场效应管:双栅场效应管的改进实现","authors":"W.W. Hoppin, S. Cripps, J.R. Anderson","doi":"10.1109/MWSYM.1988.22180","DOIUrl":null,"url":null,"abstract":"A method of directly coupling two GaAs FET devices in series is described. The resulting structure, called a stackFET, is essentially an optimum implementation of a dual-gate GaAs FET in which the gain of the two FETs is combined in a series biased, DC-coupled arrangement. The RF interconnection of the stackFET is such that each individual FET acts as if it is operating in RF common-source mode, rather than a common-source/common-gate cascode combination. This results in much higher gain and stability, and very well-behaved matching and automatic gain control characteristics. A stackFET-based balanced amplifier module giving 22.5 dB of gain over the 2-8-GHz band is discussed.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The stackFET: an improved implementation of the dual gate FET\",\"authors\":\"W.W. Hoppin, S. Cripps, J.R. Anderson\",\"doi\":\"10.1109/MWSYM.1988.22180\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method of directly coupling two GaAs FET devices in series is described. The resulting structure, called a stackFET, is essentially an optimum implementation of a dual-gate GaAs FET in which the gain of the two FETs is combined in a series biased, DC-coupled arrangement. The RF interconnection of the stackFET is such that each individual FET acts as if it is operating in RF common-source mode, rather than a common-source/common-gate cascode combination. This results in much higher gain and stability, and very well-behaved matching and automatic gain control characteristics. A stackFET-based balanced amplifier module giving 22.5 dB of gain over the 2-8-GHz band is discussed.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22180\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22180","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The stackFET: an improved implementation of the dual gate FET
A method of directly coupling two GaAs FET devices in series is described. The resulting structure, called a stackFET, is essentially an optimum implementation of a dual-gate GaAs FET in which the gain of the two FETs is combined in a series biased, DC-coupled arrangement. The RF interconnection of the stackFET is such that each individual FET acts as if it is operating in RF common-source mode, rather than a common-source/common-gate cascode combination. This results in much higher gain and stability, and very well-behaved matching and automatic gain control characteristics. A stackFET-based balanced amplifier module giving 22.5 dB of gain over the 2-8-GHz band is discussed.<>
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