GaAs HEMT lossy match amplifiers

Abstract

A design approach is described for hybrid lossy match amplifiers in the 1-13-GHz and 1-20-GHz bands, using 0.3- mu m-gate-length GaAs HEMTs (high-electron-mobility transistors). Two types of these two-stage lossy match amplifiers have been realized. One amplifier, using 0.3*280 mu m GaAs HEMTs, exhibits 14.0+or-0.4 dB gain, better than 10 dB return loss, and less than 7.8 dB noise figure over the 1-13-GHz band. The other amplifier, using 0.3*200 mu m GaAs HEMTs, shows 9.5+or-0.4 dB gain, better than 10 dB return loss, and less than 7.5 dB noise figure across the 1-20-GHz band.<>