{"title":"一种低噪声ku波段AlGaAs/GaAs HBT振荡器","authors":"N. Hayama, S. R. Lesage, M. Madihian, K. Honjo","doi":"10.1109/MWSYM.1988.22123","DOIUrl":null,"url":null,"abstract":"Design considerations, fabrication and performance results are described for a low-phase-noise Ku-band oscillator implemented using a fully self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT). The transistor has a measured collector-current 1/f noise power density of 10/sup -19/A/sup 2//Hz at f=400 Hz for a collector current of 1.2 mA. The free-running oscillator developed represents an output power of 6 dBm at 15.5 GHz, with a single-sideband (SSB) FM noise of -65 dBc/Hz at 10 kHz off-carrier. The noise level is 24 dB lower than that for a GaAs FET oscillator, and 2 dB lower than that for a silicon voltage-controlled oscillator.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"A low-noise Ku-band AlGaAs/GaAs HBT oscillator\",\"authors\":\"N. Hayama, S. R. Lesage, M. Madihian, K. Honjo\",\"doi\":\"10.1109/MWSYM.1988.22123\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Design considerations, fabrication and performance results are described for a low-phase-noise Ku-band oscillator implemented using a fully self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT). The transistor has a measured collector-current 1/f noise power density of 10/sup -19/A/sup 2//Hz at f=400 Hz for a collector current of 1.2 mA. The free-running oscillator developed represents an output power of 6 dBm at 15.5 GHz, with a single-sideband (SSB) FM noise of -65 dBc/Hz at 10 kHz off-carrier. The noise level is 24 dB lower than that for a GaAs FET oscillator, and 2 dB lower than that for a silicon voltage-controlled oscillator.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22123\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22123","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design considerations, fabrication and performance results are described for a low-phase-noise Ku-band oscillator implemented using a fully self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT). The transistor has a measured collector-current 1/f noise power density of 10/sup -19/A/sup 2//Hz at f=400 Hz for a collector current of 1.2 mA. The free-running oscillator developed represents an output power of 6 dBm at 15.5 GHz, with a single-sideband (SSB) FM noise of -65 dBc/Hz at 10 kHz off-carrier. The noise level is 24 dB lower than that for a GaAs FET oscillator, and 2 dB lower than that for a silicon voltage-controlled oscillator.<>
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