{"title":"GaAs FET放大器的单脉冲射频损伤","authors":"J. McAdoo, W. M. Bollen, R. Garver","doi":"10.1109/MWSYM.1988.22033","DOIUrl":null,"url":null,"abstract":"Several GaAs MMIC (microwave monolithic integrated circuit) amplifiers have been tested for damage from single pulses of microwave power applied to the circuit input terminals. Damage characteristics are described and modeled.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"132 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Single-pulse RF damage of GaAs FET amplifiers\",\"authors\":\"J. McAdoo, W. M. Bollen, R. Garver\",\"doi\":\"10.1109/MWSYM.1988.22033\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Several GaAs MMIC (microwave monolithic integrated circuit) amplifiers have been tested for damage from single pulses of microwave power applied to the circuit input terminals. Damage characteristics are described and modeled.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"132 3\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22033\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Several GaAs MMIC (microwave monolithic integrated circuit) amplifiers have been tested for damage from single pulses of microwave power applied to the circuit input terminals. Damage characteristics are described and modeled.<>
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