{"title":"GaAs HEMT有损匹配放大器","authors":"Y. Ito, A. Takeda","doi":"10.1109/MWSYM.1988.22047","DOIUrl":null,"url":null,"abstract":"A design approach is described for hybrid lossy match amplifiers in the 1-13-GHz and 1-20-GHz bands, using 0.3- mu m-gate-length GaAs HEMTs (high-electron-mobility transistors). Two types of these two-stage lossy match amplifiers have been realized. One amplifier, using 0.3*280 mu m GaAs HEMTs, exhibits 14.0+or-0.4 dB gain, better than 10 dB return loss, and less than 7.8 dB noise figure over the 1-13-GHz band. The other amplifier, using 0.3*200 mu m GaAs HEMTs, shows 9.5+or-0.4 dB gain, better than 10 dB return loss, and less than 7.5 dB noise figure across the 1-20-GHz band.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"GaAs HEMT lossy match amplifiers\",\"authors\":\"Y. Ito, A. Takeda\",\"doi\":\"10.1109/MWSYM.1988.22047\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A design approach is described for hybrid lossy match amplifiers in the 1-13-GHz and 1-20-GHz bands, using 0.3- mu m-gate-length GaAs HEMTs (high-electron-mobility transistors). Two types of these two-stage lossy match amplifiers have been realized. One amplifier, using 0.3*280 mu m GaAs HEMTs, exhibits 14.0+or-0.4 dB gain, better than 10 dB return loss, and less than 7.8 dB noise figure over the 1-13-GHz band. The other amplifier, using 0.3*200 mu m GaAs HEMTs, shows 9.5+or-0.4 dB gain, better than 10 dB return loss, and less than 7.5 dB noise figure across the 1-20-GHz band.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22047\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A design approach is described for hybrid lossy match amplifiers in the 1-13-GHz and 1-20-GHz bands, using 0.3- mu m-gate-length GaAs HEMTs (high-electron-mobility transistors). Two types of these two-stage lossy match amplifiers have been realized. One amplifier, using 0.3*280 mu m GaAs HEMTs, exhibits 14.0+or-0.4 dB gain, better than 10 dB return loss, and less than 7.8 dB noise figure over the 1-13-GHz band. The other amplifier, using 0.3*200 mu m GaAs HEMTs, shows 9.5+or-0.4 dB gain, better than 10 dB return loss, and less than 7.5 dB noise figure across the 1-20-GHz band.<>
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