A low-noise Ku-band AlGaAs/GaAs HBT oscillator

1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI:10.1109/MWSYM.1988.22123

N. Hayama, S. R. Lesage, M. Madihian, K. Honjo

引用次数: 24

Abstract

Design considerations, fabrication and performance results are described for a low-phase-noise Ku-band oscillator implemented using a fully self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT). The transistor has a measured collector-current 1/f noise power density of 10/sup -19/A/sup 2//Hz at f=400 Hz for a collector current of 1.2 mA. The free-running oscillator developed represents an output power of 6 dBm at 15.5 GHz, with a single-sideband (SSB) FM noise of -65 dBc/Hz at 10 kHz off-carrier. The noise level is 24 dB lower than that for a GaAs FET oscillator, and 2 dB lower than that for a silicon voltage-controlled oscillator.<>

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一种低噪声ku波段AlGaAs/GaAs HBT振荡器

本文描述了一种采用完全自对准AlGaAs/GaAs异质结双极晶体管(HBT)实现的低相位噪声ku波段振荡器的设计考虑、制造和性能结果。在集电极电流为1.2 mA时，在f=400 Hz时，晶体管的测量集电极电流为1/f，噪声功率密度为10/sup -19/ a /sup 2//Hz。所开发的自由运行振荡器在15.5 GHz时的输出功率为6 dBm，在10 kHz离载波时的单边带(SSB) FM噪声为-65 dBc/Hz。噪声水平比GaAs FET振荡器低24 dB，比硅压控振荡器低2 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1988., IEEE MTT-S International Microwave Symposium Digest

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