Single-pulse RF damage of GaAs FET amplifiers

1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI:10.1109/MWSYM.1988.22033

J. McAdoo, W. M. Bollen, R. Garver

引用次数: 7

Abstract

Several GaAs MMIC (microwave monolithic integrated circuit) amplifiers have been tested for damage from single pulses of microwave power applied to the circuit input terminals. Damage characteristics are described and modeled.<>

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GaAs FET放大器的单脉冲射频损伤

对几种微波单片集成电路(GaAs MMIC)放大器的输入端单脉冲微波功率损伤进行了测试。对损伤特性进行了描述和建模。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1988., IEEE MTT-S International Microwave Symposium Digest

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