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1988., IEEE MTT-S International Microwave Symposium Digest最新文献

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A 32 tap digitally controlled programmable transversal filter using LSI GaAs ICs (and SAW delay line) 一种32分路数字控制可编程横向滤波器，采用LSI GaAs集成电路(和SAW延迟线)
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22097
J. Culver, D. E. Zimmerman, C.M. Panasik
{"title":"A 32 tap digitally controlled programmable transversal filter using LSI GaAs ICs (and SAW delay line)","authors":"J. Culver, D. E. Zimmerman, C.M. Panasik","doi":"10.1109/MWSYM.1988.22097","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22097","url":null,"abstract":"A digitally controlled programmable transversal filter (DCPTF) is described that uses a LiNbO/sub 3/ surface-acoustic-wave (SAW) delay line and two GaAs large-scale-integrated (LSI) circuits to control magnitude and sign of the 32 tap weights. A radio-frequency (RF) signal is applied to an input transducer, which generates a surface acoustic wave that propagates down the LiNbO/sub 3/ substrate to an array of output electrodes. Each output electrode detects the electrical signal associated with the acoustic wave. Because of the delay between output electrodes, each electric signal is a delayed copy of the original output. The signal then flows into the RF tap-weighting-amplifier input. The amplifier outputs of each phase are connected to their respective summing buses. Negative tap weights are generated with an external 180 degrees hybrid. The DCPTF constitutes a significant reduction in size over previously reported PTFs with little sacrifice in performance. The filter is completely programmable and is constrained only by the bandwidth (100 MHz centered at 300 MHz) and the number of taps.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125423612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
InGaAs pseudomorphic HEMTs for millimeter wave power applications 用于毫米波功率应用的InGaAs伪晶hemt
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22183
P.M. Smith, P. Chao, L. Lester, R.P. Smith, B. Lee, D. W. Ferguson, A. Jabra, J. Ballingall, K. Duh
{"title":"InGaAs pseudomorphic HEMTs for millimeter wave power applications","authors":"P.M. Smith, P. Chao, L. Lester, R.P. Smith, B. Lee, D. W. Ferguson, A. Jabra, J. Ballingall, K. Duh","doi":"10.1109/MWSYM.1988.22183","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22183","url":null,"abstract":"The development of InGaAs pseudomorphic high-electron mobility transistors (HEMTs) with state-of-the-art power performance at millimeter-wave frequencies is reported. Results given include maximum power-added efficiencies of 44% at 35 GHz and 36% at 44 GHz, output power of 100 mW with 22% efficiency and 3-dB gain at 60 GHz, and output power of 9 mW at 94 GHz. Preliminary reliability data are presented, and prospects for further improvement in performance-the realization of multifinger HEMTs capable of higher output power and reduction of gate length to 0.1 mu m-are discussed.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123214030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
A bandpass filter using electrically coupled TM/sub 01 delta / dielectric rod resonators 采用电耦合TM/sub - 01 δ /介电棒谐振器的带通滤波器
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22085
Y. Kobayashi, M. Minegishi
{"title":"A bandpass filter using electrically coupled TM/sub 01 delta / dielectric rod resonators","authors":"Y. Kobayashi, M. Minegishi","doi":"10.1109/MWSYM.1988.22085","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22085","url":null,"abstract":"A compact bandpass filter having Chebyshev, low-loss, and good spurious response has been constructed by placing high-Q TM/sub 01 delta / dielectric rod resonators coaxially in a TM/sub 01/ cutoff circular waveguide. Precise design of the high-Q resonators and interresonator coupling is performed by the mode-matching technique. The interresonant coupling is equivalently expressed by a capacitively coupled LC resonant circuit. A four-stage Chebyshev filter having ripple of 0.035 dB and equiripple bandwidth of 27 MHz at the center frequency of 11.958 GHz, fabricated using these resonators, is discussed.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126419033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Two-port S-parameter characterization of high electron mobility transistors at millimeter wave and microwave frequencies 毫米波和微波频率下高电子迁移率晶体管的双端口s参数表征
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22020
J. Schaffner, F. Oshita, H. Fetterman, J. Berenz, K. Nakano, H. Yen
{"title":"Two-port S-parameter characterization of high electron mobility transistors at millimeter wave and microwave frequencies","authors":"J. Schaffner, F. Oshita, H. Fetterman, J. Berenz, K. Nakano, H. Yen","doi":"10.1109/MWSYM.1988.22020","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22020","url":null,"abstract":"The two-port S-parameters of 0.1- mu m gate length AlGaAs/GaAs high-electron-mobility transistors (HEMTs) at W-band (75 to 115-GHz) frequencies were found using a specially constructed six-port network analyzer. In conjunction with the millimeter-wave measurements, cryogenic microwave characterizations were also performed on 0.25- mu m-gate-length HEMTs (made with similar materials and fabrication technology as the 0.1- mu m HEMTs) to determine the extent to which the frequency range could be increased by cooling. A gas helium refrigerator was used to cool the transistors down to 50 K, and the S-parameters were measured from 2 to 18 GHz with an automatic network analyzer. The maximum available gains of a typical HEMT at room temperature and 50 K are shown. Small-signal transistor models were derived from the measured S-parameters to determine the projected maximum unity-gain frequency, f/sub max/. For this transistor, f/sub max/ increased from 33 to 45 GHz on cooling.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121585246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Millimeter-wave systems and applications in Europe 毫米波系统及其在欧洲的应用
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22117
H.H. Meinel
{"title":"Millimeter-wave systems and applications in Europe","authors":"H.H. Meinel","doi":"10.1109/MWSYM.1988.22117","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22117","url":null,"abstract":"The author concentrates on representative work and applications that have already been realized or will so on go into production. Highlighted is work on solid-state sources, hybrid integrated receivers, communications and military applications including radar, and remote sensing and reconnaisance at millimeter wavelengths.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121472487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
X and Ku band high power GaAs FETs X和Ku波段高功率GaAs场效应管
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22165
Y. Yamada, H. Kuroda, H. Izumi, T. Soezima, H. Wakamatsu, S. Hori
{"title":"X and Ku band high power GaAs FETs","authors":"Y. Yamada, H. Kuroda, H. Izumi, T. Soezima, H. Wakamatsu, S. Hori","doi":"10.1109/MWSYM.1988.22165","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22165","url":null,"abstract":"Internally matched GaAs FETs, with output powers of more than 10 W have been developed for the 10.7-11.7- and 14.0-14.5-GHz bands. These devices, with a total gate width of 32 mm, consist of two chips that are fabricated by direct ion implantation and chemical dry etching. At 14.25 GHz, the Ku-band device has achieved an output power of 41 dBm, a power gain of 5 dB and a power-added efficiency of 21%. At 11.2 GHz, the X-band device has delivered 41.2 dBm, 5.8 dB and 25%, respectively, at the 1-dB gain compression point.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131611849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
GaAs semi-insulated-gate FETs (SIGFETs) as high power MMIC control devices GaAs半绝缘栅场效应管(sigfet)作为大功率MMIC控制器件
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22199
Y. Yun, R. Gutmann
{"title":"GaAs semi-insulated-gate FETs (SIGFETs) as high power MMIC control devices","authors":"Y. Yun, R. Gutmann","doi":"10.1109/MWSYM.1988.22199","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22199","url":null,"abstract":"The GaAs SIGFETs device structure, fabrication, initial experimental performance and advantages compared to conventional recessed-gate GaAs MESFET devices are described. GaAs planar SIGFETs have been fabricated with higher continuous-wave power handling capability than and similar switching frequency figure-of-merit to those of comparable GaAs recessed-gate MESFETs. Initial SIGFET devices demonstrated 3 dB to 5 dB increase in power-handling capability with a switching frequency figure-of-merit of 362 GHz. This improved power performance is due chiefly to the semi-insulated layer under the gate metal, which allows higher gate-breakdown voltage as well as higher drain saturation current.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128060016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 50-GHz compact communication system for video link fabricated in MIC 一种50 ghz视频链路紧凑型通信系统
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22205
K. Ogawa, T. Ishizaki, K. Hashimoto, M. Sakakura, T. Uwano
{"title":"A 50-GHz compact communication system for video link fabricated in MIC","authors":"K. Ogawa, T. Ishizaki, K. Hashimoto, M. Sakakura, T. Uwano","doi":"10.1109/MWSYM.1988.22205","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22205","url":null,"abstract":"A high-performance millimeter-wave communication system in the 50-GHz band was realized by using GaAs FET microwave integrated circuits. The system contains a 25-GHz dielectric resonant oscillator, a 25-GHz FM modulator, and 25/50-GHz frequency doublers. A transmitting power of 10 dBm and a receiver noise figure of 13 dB were obtained. A frequency stability of less than +or-100 p.p.m. was obtained over the temperature range from -20 degrees C to 60 degrees C.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128115032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High speed fiber optic links for short-haul microwave applications 用于短程微波应用的高速光纤链路
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22196
I. Koffman, P. Herczfeld, A. Daryoush
{"title":"High speed fiber optic links for short-haul microwave applications","authors":"I. Koffman, P. Herczfeld, A. Daryoush","doi":"10.1109/MWSYM.1988.22196","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22196","url":null,"abstract":"Interest in the use of fiber-optic (FO) links to interconnect distributed microwave components and subsystems in phased-array antennas and similar applications resulted in an experimental and analytical comparison between fiber-optic and conventional coaxial interconnects. Experiments were conducted for two different fiber-optic links, namely, reactively matched and resistively matched. An approach based on the use of reactively matched optical transmit/receive modules in conjunction with an advanced fiber-optic link architecture was found to lead to a substantial improvement in the system performance of high-speed links.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"11 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132547280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
A microwave circuit model for a magnetostatic wave filter 静磁波滤波器的微波电路模型
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22171
S. Stitzer
{"title":"A microwave circuit model for a magnetostatic wave filter","authors":"S. Stitzer","doi":"10.1109/MWSYM.1988.22171","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22171","url":null,"abstract":"A microwave circuit model for magnetostatic-wave (MSW) filters has been developed. In the circuit considered, a number of thin strips of epitaxially grown YIG films are coupled to a common input manifold. Each strip is subjected to a different bias field, thereby producing a different passband frequency. Each YIG strip has its own separate output transducer. The complex radiation impedance of the transducers takes into account the reflection from the open end of the YIG strip. The YIG channel is modeled as a transmission line with frequency-dependent impedance equal to the MSW radiation resistance. Triple transit ripple is accurately predicted. The effects of using external matching circuits and thin metal films applied to the YIG for triple transit ripple suppression are discussed.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132746858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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