InGaAs pseudomorphic HEMTs for millimeter wave power applications

Abstract

The development of InGaAs pseudomorphic high-electron mobility transistors (HEMTs) with state-of-the-art power performance at millimeter-wave frequencies is reported. Results given include maximum power-added efficiencies of 44% at 35 GHz and 36% at 44 GHz, output power of 100 mW with 22% efficiency and 3-dB gain at 60 GHz, and output power of 9 mW at 94 GHz. Preliminary reliability data are presented, and prospects for further improvement in performance-the realization of multifinger HEMTs capable of higher output power and reduction of gate length to 0.1 mu m-are discussed.<>