Y. Yamada, H. Kuroda, H. Izumi, T. Soezima, H. Wakamatsu, S. Hori
{"title":"X和Ku波段高功率GaAs场效应管","authors":"Y. Yamada, H. Kuroda, H. Izumi, T. Soezima, H. Wakamatsu, S. Hori","doi":"10.1109/MWSYM.1988.22165","DOIUrl":null,"url":null,"abstract":"Internally matched GaAs FETs, with output powers of more than 10 W have been developed for the 10.7-11.7- and 14.0-14.5-GHz bands. These devices, with a total gate width of 32 mm, consist of two chips that are fabricated by direct ion implantation and chemical dry etching. At 14.25 GHz, the Ku-band device has achieved an output power of 41 dBm, a power gain of 5 dB and a power-added efficiency of 21%. At 11.2 GHz, the X-band device has delivered 41.2 dBm, 5.8 dB and 25%, respectively, at the 1-dB gain compression point.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"X and Ku band high power GaAs FETs\",\"authors\":\"Y. Yamada, H. Kuroda, H. Izumi, T. Soezima, H. Wakamatsu, S. Hori\",\"doi\":\"10.1109/MWSYM.1988.22165\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Internally matched GaAs FETs, with output powers of more than 10 W have been developed for the 10.7-11.7- and 14.0-14.5-GHz bands. These devices, with a total gate width of 32 mm, consist of two chips that are fabricated by direct ion implantation and chemical dry etching. At 14.25 GHz, the Ku-band device has achieved an output power of 41 dBm, a power gain of 5 dB and a power-added efficiency of 21%. At 11.2 GHz, the X-band device has delivered 41.2 dBm, 5.8 dB and 25%, respectively, at the 1-dB gain compression point.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22165\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22165","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Internally matched GaAs FETs, with output powers of more than 10 W have been developed for the 10.7-11.7- and 14.0-14.5-GHz bands. These devices, with a total gate width of 32 mm, consist of two chips that are fabricated by direct ion implantation and chemical dry etching. At 14.25 GHz, the Ku-band device has achieved an output power of 41 dBm, a power gain of 5 dB and a power-added efficiency of 21%. At 11.2 GHz, the X-band device has delivered 41.2 dBm, 5.8 dB and 25%, respectively, at the 1-dB gain compression point.<>
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