K. Miwa, T. Sawai, M. Aoyama, F. Inoue, A. Oikawa, K. Imaoka
{"title":"Particle reduction using Y2O3 material in an etching tool","authors":"K. Miwa, T. Sawai, M. Aoyama, F. Inoue, A. Oikawa, K. Imaoka","doi":"10.1109/ISSM.2007.4446866","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446866","url":null,"abstract":"Particles between metal lines were detected on etched wafers in a process tool with an Al2O3 window on top of the chamber. The particle was speculated to be derived from fluorinated Al2O3 surface in the chamber. In this paper, an attempt was described to reduce that kind of particles by using Y2O3 material within the chamber.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133592952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Choi, Jong Myoung Ko, C. Kim, Y. S. Kang, Seung Jun Lee
{"title":"Process start/end event detection and dynamic time warping algorithms for run-by-run process fault detection","authors":"J. Choi, Jong Myoung Ko, C. Kim, Y. S. Kang, Seung Jun Lee","doi":"10.1109/ISSM.2007.4446846","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446846","url":null,"abstract":"In semiconductor/FPD (flat panel display) manufacturing environments, APC (advanced process control) is a vital task for enhancing yield. The APC technology improves the productivity of equipments based on two main control mechanisms: fault management and R2R (run-to-run) recipe correction. This paper focuses on FDC (fault detection and classification) for the fault management, and proposes a run-by-run process fault detection method. The method consists of a process event detection algorithm to segment process data, and a pattern matching technique to classify the segmented data as normal or abnormal state. Experiments using the data collected from a RIE (reactive ion etching) process show that the proposed method is able to recognize normal/abnormal states with high accuracy.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130135997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Lin, W. Wong, I-Kai Hong, Chia-Yun Chen, Hong Xiao, J. Jau
{"title":"Enhancing thin dielectric remaining detection under polysilico plug of advanced DRAM by electron beam inspection","authors":"L. Lin, W. Wong, I-Kai Hong, Chia-Yun Chen, Hong Xiao, J. Jau","doi":"10.1109/ISSM.2007.4446890","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446890","url":null,"abstract":"We've studied using negative mode e-beam inspection (EBI) to detect a thin layer of dielectric remain at the bottom of storage node contact (SNC) hole. A thin layer (~15 nm) of nitride at the bottom of some SNC holes was intentionally created, EBI were performed at two stages: post etch clean and after silicon nitride cap of SNC plug. Negative mode EBI after SNC nitride cap deposition successfully captured these contact open defects as bright voltage contrast (BVC) defects. The cross-section scanning electron microscope (SEM) confirmed the results. The inspection mechanism is also discussed in the paper. We found that negative mode EBI is very useful for in-line defect monitoring.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129722522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Oikawa, T. Yamashita, H. Matsui, A. Tamura, T. Hayashi
{"title":"Using electrostatic repulsion to prevent adhesion of infinitesimal particles","authors":"J. Oikawa, T. Yamashita, H. Matsui, A. Tamura, T. Hayashi","doi":"10.1109/ISSM.2007.4446896","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446896","url":null,"abstract":"The miniaturization of semiconductor devices has been proceeding rapidly in recent years. With that progress, the size of particulate contamination that must be controlled is also decreasing. Infinitesimal particles of diameters less than 50 nm cannot be controlled by conventional air flow control and filtering, so new control methods are required. We evaluated a new particle control method that uses the repulsive electrostatic force to prevent the adhesion of particles. We confirmed that the method suppressed the adhesion of particles by about 92%.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132248751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Advanced simulation framework for AMHS","authors":"H. Kondo","doi":"10.1109/ISSM.2007.4446802","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446802","url":null,"abstract":"AMHS (automated material handling system) vendors are being expected not only to offer transport capabilities but also to guarantee its contribution to entire fab productivities. One of essential techniques for realizing this is estimation with using simulation studies prior to installation of AMHS into a fab. However traditional framework of AMHS simulation cannot enable to estimate entire fab productivities. This paper describes a new simulation framework for estimation of entire fab productivities, which describes what should be modeled and how they should be modeled.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127067229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Economic analysis of 450mm wafer migration","authors":"Chen-Fu Chien, J.K. Wang, T. Chang, Wen-Chin Wu","doi":"10.1109/ISSM.2007.4446818","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446818","url":null,"abstract":"To achieve the required continuous cost reduction driven by Moore's Law, both miniaturization through technology advances and wafer size increase have been employed in order to maintain the growth and profitability of semiconductor industry. Although some technical analyses have been done for 450 mm migration, little research has been done on economic analysis to justify the decisions and thus suggest appropriate timing for 450 mm migration. This study aims to fill the gap by proposing a preliminary economic analysis to clarify some myths and facilitate further discussions concerning collaborations among the stakeholders including equipment vendors, customers, and chipmakers.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127210282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Estimate on CO2 emissions reduction effects achieved by the adoption of a water spray humidification system to clean rooms","authors":"U. Satoshi, K. Iijima, M. Takahashi, T. Ohmi","doi":"10.1109/ISSM.2007.4446794","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446794","url":null,"abstract":"We proposed water spray humidification in an indoor system for clean rooms used for the production of semiconductors and FPDs, and calculated the energy-saving effect and CO2 emission reduction effect of this system. As a result of estimate on annual energy consumption by air conditioning at model semiconductor factory, this system can be reduced heating load of 76% and CO2 emission of 0.23 ton-CO2/Year per volume of outside air of 1 m3/min.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121115240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optical emission during the plasma etch for process control of the litho-etch bias","authors":"E. Altamirano, E. Kunnen, B. Werner","doi":"10.1109/ISSM.2007.4446848","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446848","url":null,"abstract":"In this work we present the suitability of using the optical emission spectroscopy (OES) as real-time monitoring of the reactive ion etching (RLE) process. Selecting the proper wavelength (520 nm), we found that the OES monitoring is more reliable than the typical etch rate statistical process control (SPC). In this paper we discuss our experience of using in-situ and ex-situ SPC's to monitor the SiOC (hard mask) etching and trimming.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"307 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116356648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Frankwicz, R. Clark, K. Hayes, M. Johnson, L. Kennedy, D. Scipione, C. Viera, T. Moutinho
{"title":"Comprehensive interconnect etch tool qualification methodology for high volume mixed technology node production","authors":"P. Frankwicz, R. Clark, K. Hayes, M. Johnson, L. Kennedy, D. Scipione, C. Viera, T. Moutinho","doi":"10.1109/ISSM.2007.4446830","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446830","url":null,"abstract":"Incoming production to this tool set can span technology nodes of 500nm to 180nm; I-line to deep ultraviolet photoresist and numerous anti-reflective coating (ARC) and interconnect metal stack schemes. This paper will discuss the methodology and merits of a multiple parametric qualification (MPQ) protocol for high volume mixed node metal interconnect etch production.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116169943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Guo, Y. Su, Su-fen Chiu, Fan-Yun Pai, Chung-Pin Yeh
{"title":"Evolutionary business models and inter-firm engineering processes between the foundry and fabless in the semiconductor industry","authors":"R. Guo, Y. Su, Su-fen Chiu, Fan-Yun Pai, Chung-Pin Yeh","doi":"10.1109/ISSM.2007.4446820","DOIUrl":"https://doi.org/10.1109/ISSM.2007.4446820","url":null,"abstract":"The goals of this paper are to explore the evolutionary business models between the foundry and fabless and the inter-firm engineering processes. By conducting field interviews and empirical study, this research summarizes three phases of inter-firm business models which include: transaction-based, partnership-based, and collaboration-based relationship. In the third phase, the participating partners include not only the foundry/fabless players but also the third-party suppliers such as EDA vendors, IP providers and design service providers. The transaction targets are exchanged mainly to gain \"complementary assets\" so that each player can reduce its investment and development risks. To reduce the \"transaction costs\" within this alliance, these players need seamless collaboration processes and effective inter-firm engineering processes. Service management from the foundry side is also described using a generic framework and some business implications are provided.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114718568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}