等离子体蚀刻过程中光发射对蚀刻偏压的控制

2007 International Symposium on Semiconductor Manufacturing Pub Date : 2007-10-01 DOI:10.1109/ISSM.2007.4446848

E. Altamirano, E. Kunnen, B. Werner

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引用次数: 0

摘要

在这项工作中，我们提出了使用光学发射光谱(OES)作为实时监测反应离子蚀刻(RLE)过程的适用性。选择合适的波长(520 nm)，我们发现OES监测比典型的蚀刻速率统计过程控制(SPC)更可靠。本文讨论了原位和非原位SPC监测硬掩膜蚀刻和切边的经验。

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Optical emission during the plasma etch for process control of the litho-etch bias

In this work we present the suitability of using the optical emission spectroscopy (OES) as real-time monitoring of the reactive ion etching (RLE) process. Selecting the proper wavelength (520 nm), we found that the OES monitoring is more reliable than the typical etch rate statistical process control (SPC). In this paper we discuss our experience of using in-situ and ex-situ SPC's to monitor the SiOC (hard mask) etching and trimming.

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2007 International Symposium on Semiconductor Manufacturing

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