P. Frankwicz, R. Clark, K. Hayes, M. Johnson, L. Kennedy, D. Scipione, C. Viera, T. Moutinho
{"title":"用于大批量混合技术节点生产的综合互连蚀刻工具鉴定方法","authors":"P. Frankwicz, R. Clark, K. Hayes, M. Johnson, L. Kennedy, D. Scipione, C. Viera, T. Moutinho","doi":"10.1109/ISSM.2007.4446830","DOIUrl":null,"url":null,"abstract":"Incoming production to this tool set can span technology nodes of 500nm to 180nm; I-line to deep ultraviolet photoresist and numerous anti-reflective coating (ARC) and interconnect metal stack schemes. This paper will discuss the methodology and merits of a multiple parametric qualification (MPQ) protocol for high volume mixed node metal interconnect etch production.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Comprehensive interconnect etch tool qualification methodology for high volume mixed technology node production\",\"authors\":\"P. Frankwicz, R. Clark, K. Hayes, M. Johnson, L. Kennedy, D. Scipione, C. Viera, T. Moutinho\",\"doi\":\"10.1109/ISSM.2007.4446830\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Incoming production to this tool set can span technology nodes of 500nm to 180nm; I-line to deep ultraviolet photoresist and numerous anti-reflective coating (ARC) and interconnect metal stack schemes. This paper will discuss the methodology and merits of a multiple parametric qualification (MPQ) protocol for high volume mixed node metal interconnect etch production.\",\"PeriodicalId\":325607,\"journal\":{\"name\":\"2007 International Symposium on Semiconductor Manufacturing\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 International Symposium on Semiconductor Manufacturing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.2007.4446830\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Symposium on Semiconductor Manufacturing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2007.4446830","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comprehensive interconnect etch tool qualification methodology for high volume mixed technology node production
Incoming production to this tool set can span technology nodes of 500nm to 180nm; I-line to deep ultraviolet photoresist and numerous anti-reflective coating (ARC) and interconnect metal stack schemes. This paper will discuss the methodology and merits of a multiple parametric qualification (MPQ) protocol for high volume mixed node metal interconnect etch production.