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The Tenth International Conference on Advanced Semiconductor Devices and Microsystems最新文献

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Defects in schottky diodes based on AlGaN/GaN heterostructures 基于AlGaN/GaN异质结构的肖特基二极管缺陷
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-10-01 DOI: 10.1109/ASDAM.2014.6998675
L. Stuchlíková, A. Kosa, J. Benkovska, P. Benko, L. Harmatha, J. Kováč
{"title":"Defects in schottky diodes based on AlGaN/GaN heterostructures","authors":"L. Stuchlíková, A. Kosa, J. Benkovska, P. Benko, L. Harmatha, J. Kováč","doi":"10.1109/ASDAM.2014.6998675","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998675","url":null,"abstract":"In this paper, the investigation of four types of Schottky-gate structures prepared by low-pressure metal-organic vapour phase epitaxy on sapphire and 4H-SiC substrates, by the deep level transient Fourier spectroscopy is presented. Fifteen deep energy levels have been identified (activation energies: 0.12, 0.26, 0.28, 0.48, 0.50, 0.69, 0.72, 0.75, 0.76, 1.02, 1.23, 1.28, 1.35, 1.57, 1.58 eV). The correlation between deep levels observed on different structure types is discussed.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116337956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Energy harvesting in 3D 3D能量收集
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-10-01 DOI: 10.1109/ASDAM.2014.6998684
V. Janicek
{"title":"Energy harvesting in 3D","authors":"V. Janicek","doi":"10.1109/ASDAM.2014.6998684","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998684","url":null,"abstract":"This paper describes the design and evaluation of 3D electrostatic energy harvester. It is based on electrostatic converter and uses the principle of conversion of non-electric energy into electrical energy by periodical modification of gap between electrodes of a capacitor. The structure is designed and modelled as three-dimensional silicon based MEMS. Innovative approach made it possible to reach very low resonant frequency of approx. 100 Hz. A modified long cantilever damping spring design has been used. The structure can move in all 3 axes of coordinate system and can be mechanically tuned to reach desired parameters.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115920136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel double-level-T-gate technology 新颖的双电平t型栅极技术
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-10-01 DOI: 10.1109/ASDAM.2014.6998653
A. Fox, M. Mikulics, H. Hardtdegen, S. Trellenkamp, Y. Arango, D. Grutzmacher, Zdenek Sofer, D. Gregušová, J. Novák, P. Kordos, M. Marso
{"title":"Novel double-level-T-gate technology","authors":"A. Fox, M. Mikulics, H. Hardtdegen, S. Trellenkamp, Y. Arango, D. Grutzmacher, Zdenek Sofer, D. Gregušová, J. Novák, P. Kordos, M. Marso","doi":"10.1109/ASDAM.2014.6998653","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998653","url":null,"abstract":"We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer. With the help of this technological process we prepared T-gate feet with widths as small as 200 nm. The major advantage of our process is its use of only standard optical lithography. It allows the fabrication of 100 nanometer size T-gates for transistors. High electron mobility transistors (HEMTs) were fabricated on an AlGaN/GaN/sapphire material structure with an original gate length Lg of 2 μm. Their cutoff frequency of 6 GHz was improved to 60 GHz by etching the gate to a 200 nm length double T-gate contact.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121151797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ferroelectric polymer films for flexible memory devices 柔性存储器件用铁电聚合物薄膜
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-10-01 DOI: 10.1109/ASDAM.2014.6998654
M. Micjan, J. Nevrela, M. Novota, S. Flickyngerová, P. Juhasz, J. Uhrik, J. Jakabovic, M. Weis
{"title":"Ferroelectric polymer films for flexible memory devices","authors":"M. Micjan, J. Nevrela, M. Novota, S. Flickyngerová, P. Juhasz, J. Uhrik, J. Jakabovic, M. Weis","doi":"10.1109/ASDAM.2014.6998654","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998654","url":null,"abstract":"Here we demonstrate application of organic ferroelectric insulating material: copolymer vinylidene fluoride and trifluoroethylene P(VDF-TrFE) for organic memory devices. The metal-insulator-metal structures have been used to study the ferroelectric properties and represent the model applications for ferroelectric field-effect transistors (FeFETs) and ferroelectric random access memories (FRAM). The current-voltage and capacitance-voltage characteristics depicted ferroelectric switching phenomenon present in thin-film structures and polarization properties have been analysed. This work describes the MIM device fabrication technology as well as the evaluation of material properties: saturated polarization, maximum electric field intensity, critical electric field, and relative dielectric constant.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124123636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron irradiation effects on the spectrometric characteristics of GaAs detectors 电子辐照对砷化镓探测器光谱特性的影响
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-10-01 DOI: 10.1109/ASDAM.2014.6998646
A. Šagátová, B. Zat’ko, K. Sedlačková, V. Nečas, M. Fulop
{"title":"Electron irradiation effects on the spectrometric characteristics of GaAs detectors","authors":"A. Šagátová, B. Zat’ko, K. Sedlačková, V. Nečas, M. Fulop","doi":"10.1109/ASDAM.2014.6998646","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998646","url":null,"abstract":"The spectrometric characteristics of semi-insulating GaAs detectors irradiated by 5 MeV electrons to a dose of 24 kGy at three different dose rates (20, 40 and 80kGy/h) were studied. A similar decrease of CCE (Charge Collection Efficiency) after irradiation by 7.5% of CCE was observed with all groups of investigated detectors. On the other hand, an increase of detection efficiency after irradiation was shown. The influence of the dose rate during irradiation on spectrometric properties of detectors was not proved in chosen range of dose rate.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131427620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulative study on physical modelling of submicrometer highly-strained In0.8Ga0.2As/AlAs resonant tunnelling diode 亚微米高应变In0.8Ga0.2As/AlAs谐振隧穿二极管物理模型模拟研究
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-10-01 DOI: 10.1109/ASDAM.2014.6998671
W. M. Jubadi, M. A. Md Zawawi, M. Missous
{"title":"Simulative study on physical modelling of submicrometer highly-strained In0.8Ga0.2As/AlAs resonant tunnelling diode","authors":"W. M. Jubadi, M. A. Md Zawawi, M. Missous","doi":"10.1109/ASDAM.2014.6998671","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998671","url":null,"abstract":"This work presents a physical modelling for an in-house fabricated submicron InGaAs/AlAs double barrier Resonant Tunnelling diode (RTD). The modelling is developed in ATLAS SILVACO to extend the study of advanced III-V quantum devices. The Negative Differential Resistance (NDR) current and the peak-to-valley current ratio (PVCR) are simulated and validated with measurement data. The effects of structural parameters such as barrier width, spacer width, quantum well thickness and doping on current-voltage characteristics of RTD are investigated.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122832304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications 缓冲结构对功率开关用常关p-GaN/AlGaN/GaN hemt捕获特性的影响
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-10-01 DOI: 10.1109/ASDAM.2014.6998661
M. Ťapajna, L. Válik, P. Kotara, R. Zhytnytska, F. Brunner, O. Hilt, Eldad Bahat Treidel, J. Wurfl, J. Kuzmík
{"title":"Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications","authors":"M. Ťapajna, L. Válik, P. Kotara, R. Zhytnytska, F. Brunner, O. Hilt, Eldad Bahat Treidel, J. Wurfl, J. Kuzmík","doi":"10.1109/ASDAM.2014.6998661","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998661","url":null,"abstract":"Drain current trapping characteristics were systematically analyzed and compared on normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications, grown on AlGaN/GaN double and Fe-doped GaN single heterostructures with and without Ar implantation into n-SiC substrate. Spatial location of traps was studied using comparison between trapping behaviour of devices with and without field-plate electrode and correlation between early-stage degradation modes and trapping behaviour. Our results indicate that for HEMTs grown on DH buffer, trapping process with time constant in the seconds range may be mitigated by Ar implantation into SiC.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127068903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Application of TCAD in a development of a fully complementary vertical PNP IC technology for high performance analog applications 应用TCAD开发一种完全互补的垂直PNP集成电路技术，用于高性能模拟应用
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-10-01 DOI: 10.1109/ASDAM.2014.6998698
R. Spetik, S. Kapsia, J. Pjencak
{"title":"Application of TCAD in a development of a fully complementary vertical PNP IC technology for high performance analog applications","authors":"R. Spetik, S. Kapsia, J. Pjencak","doi":"10.1109/ASDAM.2014.6998698","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998698","url":null,"abstract":"Application of process and device TCAD is used for design and optimization of process integration of fully complementary Vertical PNP (VPNP) transistor into a Bi(CMOS) technology [1]. The paper addresses two selected tasks - optimization of vertical isolation and process integration of P-collector for the VPNP.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125302238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Statistical analysis of active and passive RF devices 有源和无源射频器件的统计分析
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-10-01 DOI: 10.1109/ASDAM.2014.6998672
P. Murat, Yarimbiyik A. Emre, Dundar Gunhan, Fernandez Francisco
{"title":"Statistical analysis of active and passive RF devices","authors":"P. Murat, Yarimbiyik A. Emre, Dundar Gunhan, Fernandez Francisco","doi":"10.1109/ASDAM.2014.6998672","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998672","url":null,"abstract":"Since statistical circuit analysis are vital for robust circuit designs, different techniques like Monte-Carlo or response surface models have been developed. These tools are adapted with passive and active devices with process variations in order to statistically analyse ICs. In this paper, a similar idea has been applied for statistical analysis at device level, instead of circuits, for some RF components. By using the physical variations of the fabrication environment, process and device simulations can be realized; thus the electrical variations of the devices can be obtained. This technique is expected to shorten time-to-market in different ways. To illustrate the idea, analysis of a 0.25um SiGe transistor and 1nH spiral inductor have been realized.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128941439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Planar waveguide based structures for integrated optics on PDMS 基于平面波导的PDMS集成光学结构
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-10-01 DOI: 10.1109/ASDAM.2014.6998704
D. Jandura, D. Pudiš, S. Slabeyciusová, J. Ďurišová
{"title":"Planar waveguide based structures for integrated optics on PDMS","authors":"D. Jandura, D. Pudiš, S. Slabeyciusová, J. Ďurišová","doi":"10.1109/ASDAM.2014.6998704","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998704","url":null,"abstract":"In this paper, the fabrication technology for planar waveguide structures and devices in polydimethylsiloxane (PDMS) is presented. Direct laser writing was used to prepare pattern master in photoresist layer. In the next step, channel waveguide and ring resonator structures were imprinted in PDMS material. Finally, morphological properties of prepared waveguide structures were investigated by atomic force microscopy.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127106569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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