Electron irradiation effects on the spectrometric characteristics of GaAs detectors

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-10-01 DOI:10.1109/ASDAM.2014.6998646

A. Šagátová, B. Zat’ko, K. Sedlačková, V. Nečas, M. Fulop

引用次数: 0

Abstract

The spectrometric characteristics of semi-insulating GaAs detectors irradiated by 5 MeV electrons to a dose of 24 kGy at three different dose rates (20, 40 and 80kGy/h) were studied. A similar decrease of CCE (Charge Collection Efficiency) after irradiation by 7.5% of CCE was observed with all groups of investigated detectors. On the other hand, an increase of detection efficiency after irradiation was shown. The influence of the dose rate during irradiation on spectrometric properties of detectors was not proved in chosen range of dose rate.

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电子辐照对砷化镓探测器光谱特性的影响

研究了5 MeV电子在24 kGy剂量下，以3种不同剂量率(20、40和80kGy/h)辐照半绝缘GaAs探测器的光谱特性。在所有被研究的探测器中，CCE(电荷收集效率)在CCE的7.5%照射后都有类似的下降。另一方面，辐照后的检测效率有所提高。在选定的剂量率范围内，没有证明辐照时剂量率对探测器光谱特性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems

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