Statistical analysis of active and passive RF devices

Abstract

Since statistical circuit analysis are vital for robust circuit designs, different techniques like Monte-Carlo or response surface models have been developed. These tools are adapted with passive and active devices with process variations in order to statistically analyse ICs. In this paper, a similar idea has been applied for statistical analysis at device level, instead of circuits, for some RF components. By using the physical variations of the fabrication environment, process and device simulations can be realized; thus the electrical variations of the devices can be obtained. This technique is expected to shorten time-to-market in different ways. To illustrate the idea, analysis of a 0.25um SiGe transistor and 1nH spiral inductor have been realized.