应用TCAD开发一种完全互补的垂直PNP集成电路技术，用于高性能模拟应用

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-10-01 DOI:10.1109/ASDAM.2014.6998698

R. Spetik, S. Kapsia, J. Pjencak

{"title":"应用TCAD开发一种完全互补的垂直PNP集成电路技术，用于高性能模拟应用","authors":"R. Spetik, S. Kapsia, J. Pjencak","doi":"10.1109/ASDAM.2014.6998698","DOIUrl":null,"url":null,"abstract":"Application of process and device TCAD is used for design and optimization of process integration of fully complementary Vertical PNP (VPNP) transistor into a Bi(CMOS) technology [1]. The paper addresses two selected tasks - optimization of vertical isolation and process integration of P-collector for the VPNP.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Application of TCAD in a development of a fully complementary vertical PNP IC technology for high performance analog applications\",\"authors\":\"R. Spetik, S. Kapsia, J. Pjencak\",\"doi\":\"10.1109/ASDAM.2014.6998698\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Application of process and device TCAD is used for design and optimization of process integration of fully complementary Vertical PNP (VPNP) transistor into a Bi(CMOS) technology [1]. The paper addresses two selected tasks - optimization of vertical isolation and process integration of P-collector for the VPNP.\",\"PeriodicalId\":313866,\"journal\":{\"name\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2014.6998698\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998698","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

应用工艺和器件TCAD设计和优化了完全互补的垂直PNP (VPNP)晶体管与Bi(CMOS)技术的工艺集成[1]。本文研究了垂直隔离优化和p收集器的工艺集成两项任务。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Application of TCAD in a development of a fully complementary vertical PNP IC technology for high performance analog applications

Application of process and device TCAD is used for design and optimization of process integration of fully complementary Vertical PNP (VPNP) transistor into a Bi(CMOS) technology [1]. The paper addresses two selected tasks - optimization of vertical isolation and process integration of P-collector for the VPNP.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems

自引率

0.00%

发文量