The Tenth International Conference on Advanced Semiconductor Devices and Microsystems最新文献

{"title":"Leds with polydimethylsiloxane 2D PhC membrane in the surface","authors":"D. Pudiš, L. Suslik, R. Nolte, P. Schaaf, J. Kovác, P. Gašo","doi":"10.1109/ASDAM.2014.6998709","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998709","url":null,"abstract":"In this paper we present effective imprinting technique for fabrication of photonic crystal (PhC) structures on surface of thin polydimethylsiloxane (PDMS) membranes. We prepared two-dimensional (2D) PhC surface relief structures of period 650 nm in thin PDMS membranes with depth up to 140 nm. The patterned PDMS membranes were placed on LED chip. The diffraction effect of PhC PDMS membranes with 2D square and triangular symmetry was then analyzed by measurements of far-field radiation pattern.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114475524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling and characterization of power InAlN/GaN HEMTs supported by 3-D electrothermal simulation","authors":"M. Molnar, D. Donoval, A. Chvála, J. Marek, P. Pribytny","doi":"10.1109/ASDAM.2014.6998658","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998658","url":null,"abstract":"In this paper we present the methodology for a fast 3-D electrothermal simulation based on relaxation method, developed and designed for Synopsys TCAD Sentaurus environment to decrease a simulation time for complex 3-D devices. This work compares the experimental results obtained from I-V measurements with the results from 2-D FEM electrothermal simulations. A power InAlN/GaN HEMT structure using fork-type gate electrode was used to perform validation of the designed fast electrothermal simulation. Finally, we also investigate the temperature interaction between the gate fingers employing only one source and/or both sources using our 3-D simulation methodology.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134400303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of interfering signals in structures of integrated circuits","authors":"J. Novak, J. Foit","doi":"10.1109/ASDAM.2014.6998688","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998688","url":null,"abstract":"The electromagnetic compatibility serves as a measure for the possibility of coexistence of numerous electronic systems occupying a common environment without unwanted electromagnetic couplings that could interfere with correct functioning of individual systems [1]. The integrated circuits can be assumed to be independent electronic systems set up of individual operational blocks. The conveying of signals between blocks is provided by networks of electrical leads.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133973896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Total internal reflection ellipsometry in the investigation of phenomena at surfaces and interfaces for biosensing","authors":"J. Chlpík, K. Bombarová, Július Cirák","doi":"10.1109/ASDAM.2014.6998699","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998699","url":null,"abstract":"Ellipsometry, particularly spectroscopic ellipsometry, is a very sensitive, nondestructive experimental technique of thin film characterisation. The recently proposed method of Total internal reflection ellipsometry (TIRE) combines the advantages of spectroscopic ellipsometry and the Kretschmann type SPR geometry of total internal reflection. The modeling reveals detection limit of changes in the bulk refractive index, Δnb= 1.5×10-6 which represents the instrumental potential for detecting an analyte at several pmol/liter in a solution. These results were proven by experimental studies on monitoring changes in adsorbed layers (at the metal / dielectric interface) caused by specific binding of biomolecules from the surrounding solution.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123204113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of temperature on the sensitivity of the AlGaN/GaN C-HEMT-based piezoelectric pressure sensor","authors":"J. Dzuba, G. Vanko, I. Ryger, M. Vallo, V. Kutǐs, T. Lalinsky","doi":"10.1109/ASDAM.2014.6998633","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998633","url":null,"abstract":"We present a finite element method (FEM) analysis of the AlGaN/GaN diaphragm-based pressure sensor with integrated C-HEMT. Our concept uses the C-HEMT as a vertical ring gate capacitor to sense the changes in the piezoelectric charge generated while pressure loading. The lattice mismatch and different thermal expansion coefficients in manufacturing process put the diaphragm to the tension. The operating conditions, especially the elevated temperature, may cause the mechanical stress variations and therefore also the change in mechanical behavior of the pressure sensing diaphragm. Therefore we performed the FEM simulation to predict the influence of elevated temperature and to determine the operating temperature range of proposed circular diaphragm-based MEMS pressure sensor.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126659129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Calculation of accurate channel spacing of an arrayed waveguide grating optical multiplexer/demultiplexer applying position method","authors":"E. Hodzic, D. Seyringer, F. Uherek, J. Chovan, A. Kuzma","doi":"10.1109/ASDAM.2014.6998685","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998685","url":null,"abstract":"In this paper we present the position method to correct the channel spacing between the transmitted channels of an AWG. The developed position method was applied to 20-ch 200 GHz AWG and the achieved results confirm very good correlation between required channel spacing (200 GHz) and the channel spacings calculated from simulated AWG transmission characteristics.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126863275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The characterization and use of nanostructured films in sensing applications","authors":"O. N. Oliveira","doi":"10.1109/ASDAM.2014.6998690","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998690","url":null,"abstract":"Summary form only given. The control of molecular architectures in nanostructured films holds the promise to revolutionise sensing and biosensing, particularly in clinical diagnosis. Such organized films are suitable for immobilising biomolecules with preserved activity, and allows synergy to be sought among distinct types of materials. Indeed, a large number of organic, inorganic and hybrid materials are exploited in organised films produced with either the Langmuir-Blodgett (LB) or the electrostatic layer-by-layer (LbL) techniques. In biosensing, for instance, nanoparticles, nanotubes, polymers and biomacromolecules can be used, in conjunction with an equally wide variety of biorecognition elements, including enzymes, DNA, RNA, catalytic antibodies, antigens, peptides, aptamers, and labeled biomolecules. The layer-by-layer nature of the films is essential for combining different properties in the same sensing device, whose principle of detection may be based on optical, electrical and electrochemical methods. In this lecture, an overview will be presented of the use of nanomaterials for sensing, with emphasis on two major topics. The first topic is related to investigation of interface properties of functionalised surfaces, which is crucial for the successful design of sensing devices. Of particular importance is the combination of spectroscopic and microscopic methods, as they permit to determine the presence and orientation of functional groups on the nanostructured films, especially those taking part in the intermolecular interactions responsible for sensing. Surface-specific methods for this purpose are sum-frequency generation spectroscopy (SFG) and polarisation-modulated infrared reflection absorption spectroscopy (PM-IRRAS). A recent example was the use of SFG to show that interaction between the analyte lactose and the enzyme β-Galactosidase (β-Gal) immobilised in an LbL film induced the latter to lose order. The clear decrease in intensity of the amide bands assigned to (β-Gal) appears to be the first demonstration of structural effects induced by molecular recognition of lactose. The other method to probe intermolecular interactions in sensing is atomic force spectroscopy, whereby force curves are obtained upon approaching and retracting the atomic force microscope (AFM) tip onto the sample coated with a nanostructured film in a liquid cell. Experiments with an AFM tip functionalised with acetyl-CoA carboxylase enzyme (ACC enzyme) made it possible to determine the interaction force between said enzyme and its substrate, the herbicide diclofop. Steered molecular dynamics was used to model the force, which shows a possible way to design nanobiosensors and interpret experimental results. The second topic focuses the use of statistical and computational methods to treat sensing and biosensing data, particularly in cases where large amounts of data need to be generated, as in clinical diagnosis. Examples will be given of information visual","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122214650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation of distributed MOEMS for smart environments","authors":"V. Shakhnov, L. Zinchenko, I. Kosolapov","doi":"10.1109/ASDAM.2014.6998679","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998679","url":null,"abstract":"Smart environments require a huge number of sensors and actuators that interact and transfer information from the physical world to a virtual reality. In the paper, we discuss approaches to computer-aided simulation of distributed microsystems. Our focus is on micro-opto-electromechanical systems (MOEMS) that are based on a combination of optical, mechanical and electrical effects. Technological uncertainties result in the change of MOEMS output characteristics and can result in incorrect data transfer from the physical world to a virtual reality. We discuss our experimental results for distributed MOEMS. Finally, we make conclusions about supporting collaboration in smart environments with distributed MOEMS.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123261599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling of geometrically scalable integrated finger diodes","authors":"V. Kosel, F. Roger, K. Molnár, W. Posch, E. Seebacher","doi":"10.1109/ASDAM.2014.6998689","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998689","url":null,"abstract":"A modeling approach for geometrically scalable integrated short length finger diodes is presented. Such diodes cannot be modeled by the usual area/perimeter modeling approach especially if the ends of the finger exhibit different doping profiles compared to the longitudinal parts and if a short length multi-finger configuration is used. These configurations can be either modeled through a four diode physics based model or by using effective parameters. This paper deals with the first option. A dedicated test chip containing 9 finger diodes differing in size has been designed and characterized at room temperature. The modeling approach is explained and a comparison between the state-of-the-art and the physical modeling approach is shown. 2D TCAD simulations of a short length 5 finger diode has been performed in order to confirm the basic characteristics of the current distribution between the finger terminals.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130278960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Methods for lifetime characterization of concentric circuit boards","authors":"J. Formánek, J. Jakovenko","doi":"10.1109/ASDAM.2014.6998687","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998687","url":null,"abstract":"The paper presents development of simulation method and measuring system for a lifetime characterization of concentric circuit boards. It brings a knowledge about modern approaches of structure lifetime estimation by using a FEM (finite element method) modelling. Methods known in the field of mechanical engineering and material engineering are extended by the author with the new knowledge and applied for development of new lifetime evaluation method. The testing is done by using the specific mechanical bending test apparatus which is designed to achieve equivalent results as can be achieved by the cyclic tests in the thermal chamber. The structure damage is generated by using a mechanical force generated by the pneumatic piston. Tested concentric circuit boards are mainly used in LED lamps. The boards are characterized by a circular shape, concentrically mounted components and high operating temperatures.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131105238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}