M. Molnar, D. Donoval, A. Chvála, J. Marek, P. Pribytny
{"title":"Modeling and characterization of power InAlN/GaN HEMTs supported by 3-D electrothermal simulation","authors":"M. Molnar, D. Donoval, A. Chvála, J. Marek, P. Pribytny","doi":"10.1109/ASDAM.2014.6998658","DOIUrl":null,"url":null,"abstract":"In this paper we present the methodology for a fast 3-D electrothermal simulation based on relaxation method, developed and designed for Synopsys TCAD Sentaurus environment to decrease a simulation time for complex 3-D devices. This work compares the experimental results obtained from I-V measurements with the results from 2-D FEM electrothermal simulations. A power InAlN/GaN HEMT structure using fork-type gate electrode was used to perform validation of the designed fast electrothermal simulation. Finally, we also investigate the temperature interaction between the gate fingers employing only one source and/or both sources using our 3-D simulation methodology.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998658","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper we present the methodology for a fast 3-D electrothermal simulation based on relaxation method, developed and designed for Synopsys TCAD Sentaurus environment to decrease a simulation time for complex 3-D devices. This work compares the experimental results obtained from I-V measurements with the results from 2-D FEM electrothermal simulations. A power InAlN/GaN HEMT structure using fork-type gate electrode was used to perform validation of the designed fast electrothermal simulation. Finally, we also investigate the temperature interaction between the gate fingers employing only one source and/or both sources using our 3-D simulation methodology.