Modeling and characterization of power InAlN/GaN HEMTs supported by 3-D electrothermal simulation

In this paper we present the methodology for a fast 3-D electrothermal simulation based on relaxation method, developed and designed for Synopsys TCAD Sentaurus environment to decrease a simulation time for complex 3-D devices. This work compares the experimental results obtained from I-V measurements with the results from 2-D FEM electrothermal simulations. A power InAlN/GaN HEMT structure using fork-type gate electrode was used to perform validation of the designed fast electrothermal simulation. Finally, we also investigate the temperature interaction between the gate fingers employing only one source and/or both sources using our 3-D simulation methodology.